• Title/Summary/Keyword: substrate thickness

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Design of A Miniaturized Low Pass Filter Using Common Defected Ground Structure (공통 결함접지구조를 이용한 소형화된 저역통과여파기의 설계)

  • Lee, Jun;Lee, Jae-Hoon;Lim, Jong-Sik;Ahn, Dal
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.5
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    • pp.2298-2304
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    • 2011
  • This paper describes and presents the design of a miniaturized low pass filter (LPF) for microwave frequency region using a common defected ground structure (CDGS). In this study a half-sized LPF is obtained using CDGS, while the previous LPFs with the conventional DGS showed a mild size-reduction. The common DGS (CDGS) is realized on the common ground plane of two microstrip lines, i. e double-sided microstrip lines, which exist back-to-back to each other. In order to show the validity of the proposed design, an example of LPF using CDGS and double-sided microstrip lines is designed, fabricated and measured using the dielectric substrate with the dielectric constant of 2.2 and with the thickness of 31mils. The size of the designed LPF using CDGS is only 52.6% compared to that of the previous LPF with the conventional DGS. In addition, it is shown that the performances of the proposed LPF are well preserved after the size-reduction with the measured S11 and S21 of -22dB, min and -0.19dB, max, respectively.

A Study on the fabrication of Bandpass filter Using a Simulator (시뮬레이터를 이용한 대역통과 필터 제작)

  • 유일현
    • The Journal of the Acoustical Society of Korea
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    • v.19 no.2
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    • pp.33-39
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    • 2000
  • We have studied to obtain the frequency characteristics of the Surface Acoustic Wave(SAW) bandpass filter, having low shape factor, it's interdigital transducer(IDT) was formed on the 35° Y-cut X-propagation Quartz substrate and was evaporated by Aluminium. And then, we performed computer-simulation by a simulator. And, we can design that the apodization weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have employed that the number of pairs of the input and output IDT are 2200 pairs and 1000pairs, respectively and used the Kaiser-Bessel window function in order to minimize the effect of ripple. And, while the width and the space of IDT's finger are 6㎛ m and 5.75㎛, respectively and we could obtain the resonable results when the IDT thickness was 6000Å in consideration of the ratio of SAW's wavelength, and IDT aperture is 2mm. Frequency response of the fabricated SAW bandpass filter has the property that the center frequency is about 70MHz, shape factor is less than 1.3, bandwidth at the 1.5dB is probably 1.3MHz, out-band attenuation is almost -45dB, insertion loss is 19dB and ripple in the width of bandpass is 1dB approximately. Therefore, these frequency characteristics of the fabricated SAW bandpass filter are agreed well with the designed values.

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Fabrication and Characterization of Bi-axial Textured Conductive Perovskite-type Oxide Deposited on Metal Substrates for Coated Conductor. (이축 배향화된 전도성 복합산화물의 금속 기판의 제조와 분석)

  • Sooyeon Han;Jongin Hong;Youngah Jeon;Huyong Tian;Kim, Yangsoo;Kwangsoo No
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.235-235
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    • 2003
  • The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

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Preparation and Characterization of Photocatalytic Paper for VOCs Adsorption and Oxidation Decomposition (VOC흡착 및 산화분해 특성을 갖는 광촉매종이의 제조 및 특성 평가)

  • Yoo, Yoon-Jong;Kim, Hong-Soo;Jeon, Sang-Ho;Jang, Gun-Eik
    • Journal of the Korean Ceramic Society
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    • v.42 no.1
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    • pp.56-61
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    • 2005
  • Highly durable photocatalytic paper containing anatase $TiO_{2}$, active carbon and ceramic fiber, which can adsorb VOCs and decompose them by photo oxidation simultaneously, was manufactured and characterized. Optimum concentration of PDADMAC to let $TiO_{2}$ adhere on the surfaces of active carbon and ceramic fiber selectively was $10\~15$ ppm in a slurry mixture for making photocatalytic paper. The thickness and basis weight of the produced catalytic paper by paper-making method were 0.4 mm and 380 $g/m^{2}$, respectively. Adsorption reaction by active carbon and photocatalytic decomposition reaction by $TiO_{2}$ were proceeded simultaneously, by which the abatement rate was found to be greatly enhanced compared to the similar environment with single adsorption reaction or single photocatalytic reaction only. The selective attachment of $TiO_{2}$ on ceramic fiber and active carbon was found to be very effective in preventing decomposition of substrate by the $TiO_{2}$ attack during exposure to UV light.

Design of CPW-Fed Printed Monopole Antenna for CDMA/WLAN (CDMA/WLAN 겸용 CPW 급전 인쇄형 모노폴 안테나 설계)

  • Nam, Ju-Yeol;Song, Won-Ho;Lee, Young-soon
    • Journal of Advanced Navigation Technology
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    • v.19 no.6
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    • pp.623-629
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    • 2015
  • In the present study, a coplanar waveguide (CPW)-fed printed monopole antenna with an inverted n-shaped slot is newly proposed for dual band operations which cover bandwidths of CDMA (1.85~2.025 GHz) and WLAN (2.4~2.484 GHz) as well as implementation of omnidirectional radiation pattern. For enhancement of impedance bandwidth ($S11{\leq}10dB$) in 2.4 GHz WLAN frequency band, an inverted n-shaped slot instead of the previous n-shaped slot is etched on the printed radiating monopole. The proposed antenna is designed and fabricated on one side of FR4 substrate with dielectric constant of 4.4, thickness of 1.6 mm, and size of $50{\times}25mm^2$. It has been observed that the measured impedance bandwidths are 280 MHz (1.84~2.12 GHz) in frequency band of CDMA and 420 MHz (2.38~2.8 GHz) in WLAN frequency band respectively. It is noticeable that impedance bandwidth in 2.4 GHz frequency band of WLAN is enlarged to three times due to use of inverted L-shaped slot in comparison with impedance bandwidth 140 MHz (2.39~2.53 GHz) obtained by use of the previous n-shaped slot. In addition, good omnidirectional radiation patterns have been observed over the entire frequency band of interest.

L-shaped Slot Antenna for WLAN MIMO Application (무선랜 MIMO용 L-형 슬롯 안테나)

  • Song, Won-Ho;Nam, Ju-Yeol;Lee, Ki-Yong;Lee, Young-soon
    • Journal of Advanced Navigation Technology
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    • v.20 no.4
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    • pp.344-351
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    • 2016
  • In the present study, a dual-band multiple-input-multiple-output (MIMO) antenna covering WLAN frequency bands of 2.4 GHz (2.4 ~ 2.484 GHz) and 5 GHz (5.15 ~ 5.825 GHz) is newly presented to avoid use of decoupling structure for increasing isolation. The antenna consists of two L-shaped slots with n-shaped slots etched on the floating ground plane surrounded by open ended L-shaped slots which are placed in the left and right corner of PCB respectively. The proposed antenna is designed and fabricated on one side of FR4 substrate with dielectric constant of 4.3, thickness of 1.6 mm, and size of $50{\times}50mm2$. It has been observed that the measured impedance bandwidths ($S_{11}{\leq}-10dB$) are 0.3 GHz (2.28 ~ 2.58 GHz) in 2.4 GHz frequency band and 0.89 GHz (5.11 ~ 6 GHz) in 5 GHz frequency band respectively. In addition, It has been observed that the whole efficiency are more than 80 % in the whole operating frequency band and envelope correlation coefficient of the antenna is less than 0.05 as a very small value in spite of nothing of the decoupling structure.

Study on a broadband quasi-Yagi antenna for mobile base station (이동통신 기지국용 광대역 quasi-Yagi 안테나에 관한 연구)

  • Lee, Jong-Ig;Yeo, Jun-Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.9
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    • pp.4165-4170
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    • 2012
  • In this paper, a method for the improvement in the gain and bandwidth of a microstrip-fed broadband planar quasi-Yagi antenna (QYA) is studied. The broadband characteristics of the QYA are achieved from the coplanar strip-fed planar dipole driver and a parasitic director close to the driver. In order to obtain stable gain variation over the required frequency band, a director and a ground reflector are appended to the driver having a nearby parasitic director. The QYA is fed through an integrated balun composed of a microstrip line and a slot line which are terminated in a short circuit. By adjusting the feeding point, a broadband impedance matching is obtained. A QYA with an operating frequency band of 1.75-2.7 GHz and a gain > 4.5 dBi is designed and fabricated on an FR4 substrate with dielectric constant of 4.4 and thickness of 1.6mm. The experimental results show that the fabricated antenna has good performance such as a broad bandwidth of 59.7%(1.55-2.87 GHz), a stable gain between 4.7-6.5 dBi, and a front-to-back ratio > 10 dB. The measured data agree well with the simulation, which validates this study.

Optimization of Resistance Spot Weld Condition for Single Lap Joint of Hot Stamped 22MnB5 by Taking Heating Temperature and Heating Time into Consideration (핫스템핑 공정에서 가열온도 및 유지시간을 고려한 22MnB5의 단일겹치기 저항 점용접 조건 최적화)

  • Choi, Hong-Seok;Kim, Byung-Min;Park, Geun-Hwan;Lim, Woo-Seung;Lee, Sun-Bong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.10
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    • pp.1367-1375
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    • 2010
  • In this study, optimization of the process parameters of the resistance spot welding of a sheet of aluminum-coated boron alloyed steel, 22MnB5, used in hot stamping has been performed by a Taguchi method to increase the strength of the weld joint. The process parameters selected were current, electrode force, and weld time. The heating temperature and heating time of 22MnB5 are considered to be noise factors. It was known that the variation in the thickness of the intermetallic compound layer between the aluminum-coated layer and the substrate, which influences on the formation of nugget, was generated due to the difference of diffusion reaction according to heating conditions. From the results of spot weld experiment, the optimum weld condition was determined to be when the current, electrode force, and weld time were 8kA, 4kN, and 18 cycles, respectively. The result of a test performed to verify the optimized weld condition showed that the tensile strength of the weld joint was over 32kN, which is considerably higher than the required strength, i.e., 23kN.

Characteristics of the Crystal Structure and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor (Metal/Ferroelectric/Insulator/Semiconductor 구조의 결정 구조 및 전기적 특성에 관한 연구)

  • 신동석;최훈상;최인훈;이호녕;김용태
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.195-200
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    • 1998
  • We have investigated the crystal structure and electrical properties of Pt/SBT/$CeO_2$/Si(MFIS) and Pt/SBT/Si(MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$CeO_2$/Si structure had larger grain than that of SBT/Si structure. Furthermore HRTEM showed that SBT/$CeO_2$/Si had 5 nm thick $SiO_2$layer and very smooth interface but SBT/Si had 6nm thick $SiO_2$layer and 7nm thick amorphous intermediate interface. Therefore, $CeO_2$film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$CeO_2/Pt/SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-voltage characteristics, the memory of Pt/SBT(140 nm)/$CeO_2$(25 nm)/Si structure were in the range of 1~2 V at the applied voltage of 4~6 V. The memory window increased with the thickness of SBT film. These results may be due to voltage applied at SBT films. The leakage currents of Pt/SBT/$CeO_2$/Si and Pt/SBT/Si were $ 10^8A/\textrm{cm}^2$ and $ 10^6 A/\textrm{cm}^2$, respectively.

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The optical properties of GZO and ZnO thin films deposited by RF magnetron sputtering (RF magnetron sputtering 법으로 증착된 GZO와 ZnO 박막의 광학적 특성)

  • HwangBoe, S.J.;Jeon, H.H.;Kim, G.C.;Lee, J.S.;Kim, D.H.;Choi, W.B.;Jeon, M.H.
    • Journal of the Korean Vacuum Society
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    • v.16 no.6
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    • pp.453-457
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    • 2007
  • Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200$\sim$1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.