• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.686-693
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• 2004

We have studied a method to fabricated a Surface Acoustic Waves (SAW) filter for Wide band Codeless Division Multiple Access(WCDMA) was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we developed a simulator using the mathematica package. And, we can design and fabricate the Slanted finger Inter-digital Transducer (SFIT) for the purpose to decreased the ultimate rejections on side of the electrodes, and performed computer-simulation by simulator. Also, we have employed that the block weighted type Inter-digital Transduce(IDT) as input transduce of the filter and the withdrawal weighted type IDT as an output transducer of the filter in order to minimize effect of diffractions. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000\AA$, and $1\lambda/4(\cong3.6{\mu}m)$, respectively. Also the width of IDT' finger and the space between IDT' finger and reflector are $1\lambda$/16 and 1\lambda$/8, respectively. Frequency response of the fabricated SAW bandpass filter has the property that center frequency is about 190MHz, bandwidth at the 3dB is probably 4MHz and out-band attenuation is -60dB approximately.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2359-2366
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• 2014

In this paper, the characteristics of a inset fed rectangular microstrip patch antenna for S-band applications is studied. The variations of return loss along inset length and inset width are investigated on the inset fed rectangular microstrip patch antenna. From the investigated results, the optimized inset fed antenna is designed. At the resonant frequency 2.3 GHz, the optimized dimension of the patch is $45.0mm{\times}40.9mm$. The inset length and width are 14 mm and 1 mm, respectively. The designed antenna is fabricated on the substrate which has a dielectric constant and thickness with 2.5 and 0.787 mm. Simulation results are obtained by a 3D EM(Electromagnetic) solver. The resonant frequency and return loss are measured 2.3025 GHz and -21.11 dB, respectively. The measured and simulated results of the fabricated antenna are in good agreement.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.3
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• pp.1445-1450
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• 2013

In this paper, a broadband series-fed bow-tie dipole pair (SBDP) antenna operating in the band of 1.7-2.7 GHz for mobile communication base station applications is proposed. The proposed antenna uses bow-tie-shaped dipole elements instead of straight strip dipole ones used in a conventional series-fed dipole pair (SDP) antenna. The simulation results show that the lowest operating frequency is shifted toward lower frequency as the flare angle increases, and so the lengths of the bow-tie dipole elements can be reduced in proportion to the frequency shift toward lower frequency. An SBDP antenna with a flare angle of 10 degrees is fabricated on an FR4 substrate (dielectric constant = 4.4 and thickness = 1.6 mm) and total width of the fabricated antenna is reduced by 10% compared to that of the conventional SDP antenna. The measured impedance bandwidth for voltage standing wave ratio (VSWR) < 2 is 48.8% (1.69-2.78 GHz), gain is 5.8-6.3 dBi, and the front-to-back ratio (FBR) is 14-17 dB.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1106-1115
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• 2006

In this paper, the transmission characteristics and equivalent circuit model of microstrip transmission line having defected ground structure (DGS) in multilayer substrates are described fur high frequency region. In order to perform the study, the second dielectric layer is attached additionally onto the bottom(ground) plane of the basic DGS microstrip line consisted of the microstrip line and DGS. The dielectric constant and thickness of the second dielectric layer are adjusted to get various transmission characteristics and model parameters, and to analysis the effect of the second dielectric layer ultimately. According to this paper, the effect and equivalent circuits due to the attached dielectric substrate are verified separately, and this is expected to be applied to high frequency circuit design in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.141-142
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.448-449
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• 2006

For the possible applicative pearl pigment, multi-layered $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ thin film was deposited on glass substrate by using sputtering method. $TiO_2$ and Al or Cr was selected as a possible high and low refraction materials at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ layers show the wavelength range of 430 - 760nm, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well matched with the experimental one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Journal of radiological science and technology
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• v.27 no.2
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• pp.45-50
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• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• Polymer(Korea)
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• v.33 no.1
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• pp.91-95
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• 2009

We fabricated the electromagnetic (EM) noise absorber films for high temperature use by blending a soft magnetic powder with poly(amide imide) (PAI). The EM noise absorber films of PAI/soft magnet composite were prepared by casting the solution of poly(amide amic acid)/soft magnet powder into glass substrate with casting applicator device and then thermal imidization. The obtained films were fully characterized and their physical properties including thermal behavior, thermal stability and mechanical properties were studied. The EM noise absorption ability was also investigated using micro-strip line method. At 1 GHz, the power loss of composite film with 150 ${\mu}m$ thickness was about 25%.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.249-253
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• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.