• Title/Summary/Keyword: substrate thickness

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Color Filter Utilizing a Thin Film Etalon (박막형 에탈론 기반의 투과형 컬러필터)

  • Yoon, Yeo-Taek;Lee, Sang-Shin
    • Korean Journal of Optics and Photonics
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    • v.21 no.4
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    • pp.175-178
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    • 2010
  • A transmission type color filter based on a thin film Ag-$SiO_2$-Ag etalon was proposed and realized in a quartz substrate. The device could acquire infrared suppressed transmission and wide effective area compared to costly e-beam lithography and laser interference lithography. The FDTD method was introduced to take into account the effect of the dispersion characteristics of the silver metal and the thickness thereof. Three different color filters were devised: The cavity length for the red, green and blue filters were 160 nm, 130 nm, and 100 nm respectively, with the metal layer unchanged at 25 nm. The observed center wavelengths were measured at 650 nm, 555 nm, and 480 nm for the red, green, and blue devices; the corresponding bandwidths were about 120 nm, 100 nm, and 120 nm; and the peak transmission for all was ~60%. Finally the relative transmission was measured to decline with the angle of the incident beam with the rate of 1%/degree.

A Study on the Mode Characteristics of CSP-LOC Laser Diode for High Power (고출력 CSP-LOC 레이저 다이오드의 모우드 특성에 관한 연구)

  • Yoon, Seok-Beom;Oh, Hwan-Sool
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1367-1372
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    • 1988
  • In this paper, we have optimized the computation of the CSP - LOC (Channel Substrate Planar-Large Optical Cavity) structure to design the gith power (Ga, Al) As/GaAs CSP-LOC laser diode. The parameters of the device on the bases of experimental datas include the effects of the various layer thickness, material absorption coefficients, stripe width and so forth. At active layer ($d_2$)=0.08 um with optical layer ($d_3$)=0.5 um and $d_2$ = 0.1 um with $d_3$ = 0.4 um, we find the narrower beam divergence and stable high power in the lowest-order mode without the phenomenon of spatial hole burning. The results of theoretical computation show good agreement with experimental measurements made on LPE grown CSP-LOC. Finally, we developed an practical program and the program is applicable to the CSP-LOC lasers with any materials.

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MR Characteristics of $Al_2O_3$ Based Magnetic tunneling Junction ($Al_2O_3$를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성)

  • 정창욱;조용진;정원철;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.10 no.3
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    • pp.118-122
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    • 2000
  • MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.

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The Magnetic Properties of Fe-Hf-C Soft Magnetic Thin Films (Fe-Hf-C계 연자성 박막합금의 자기적 성질)

  • 최정옥;이정중;한석희;김희중;강일구
    • Journal of the Korean Magnetics Society
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    • v.3 no.1
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    • pp.23-28
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    • 1993
  • Thin films of soft magnetic Fe-Hf-C alloys with nanoscale crystallites were investigated in this study. The films were fabricated by an RF diode magnetron sputtering apparatus and subsequently annealed in vacuum. The soft magnetic properties of the films were observed to differ depending on the different substrates such as Corning 7059, $CaTiO_3$ and $Al_2O_3-TiC$ with various underlayer(Cr, $SiO_2$) thickness. This results may be due to the interdiffusion between the substrate and the magnetic layer and/or between the underlayer and the magnetic layer, rather than the microstructural change such as grain size. The Fe-Hf-C films with high permeability up to 4000(at 1 MHz) and saturation magnetization up to 16 kG were obtained in the vicinity of phase boundary between the crystalline and amorphous state when the size of ${\alpha}-Fe$ grains is about 5 nm. And also the films were found to have thermal stability up to $600^{\circ}C$.

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3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

  • Lee, Kang-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.11-19
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    • 2015
  • Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.

A Study on Optical Characteristic of Nano Metal Grid Polarizer Film with Different Deposition Thicknes (나노 금속 격자형 편광필름 제작에서 증착 두께에 따른 광 특성 연구)

  • Kim, Jiwon;Cho, Sanguk;Jeong, Myung Yung
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.1
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    • pp.63-67
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    • 2015
  • In this study, we demonstrate the change of optical characteristic by thickness of metal deposition on nano metal grid polarizer film fabrication. Nano metal grid polarizer film consists of aluminium grid polarizer layer on PET (Polyethylene phthalate) substrate. We aim at metal grid layer formation for the large nano wire grid polarizer fabrication. we draw process conditions of the nano metal grid polarizer film fabrication to improve transmittance and extinction ratio and Nano wire grid polarizer film (NWGP) film is fabricated with 140 nm pitch, 70 nm width, and 70 nm depth of metal grid on optimum design conditions. As a result, we get high optical properties of nano wire grid polarizer which is the maximum transmittance of 80% and the extinction ratio of $10^6$ at 600 nm wavelength respectively.

Growth and Characterization of $CuInTe_2$ Single Crystal thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE) 방법에 의한 $CuInTe_2$ 단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;이관교;이상열;유상하;정준우;정경아;백형원;방진주;신영진
    • Korean Journal of Crystallography
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    • v.11 no.4
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    • pp.212-223
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    • 2000
  • A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

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Design and Implementation of CPW-Fed UWB Monopole Antenna (CPW 급전 방식을 이용한 UWB 모노폴 안테나 설계 및 구현)

  • Yu, Ju-Bong;Jeon, Jun-Ho;An, Chan-Kyu;Kim, Woo-Chan;Yang, Woon-Geun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.2
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    • pp.218-223
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    • 2010
  • In this paper, a novel CPW(Coplanar Waveguide)-fed UWB(Ultra Wide Band) antenna is designed, implemented, and measured for UWB communications. CPW-fed planar antenna has advantages of wide-bandwidth, low-cost and easy interaction with radio frequency front end circuitry. We have used HFSS(High Frequency Structure Simulator) of Ansoft which is based on the FEM(Finite Element Method) to simulate the proposed antenna. FR-4 substrate of thickness 1.6 mm and relative permitivity 4.4 is used for implementation. The proposed antenna showed VSWR(Voltage Standarding Wave Ratio)${\leq}2$ for the frequency band from 3.1 GHz to 10.6 GHz which is used for ultra wide band communication. Measured peak gains are 2.61, 4.95, 2.89, 7.35 dBi at 3, 6, 8, 11 GHz, respectively.

Design and Fabrication of UWB Antenna Using the SRR for WLAN Band Rejection (SRR을 이용한 WLAN 대역 저지용 UWB 안테나의 설계 및 제작)

  • Jo, Nam-I;Kim, Dang-Oh;Kim, Che-Young;Choi, Dong-Muk
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.1014-1020
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    • 2009
  • In this paper, a novel UWB(Ultra Wide-band) antenna with suppressed band of IEEE 802.11a($5.15{\sim}5.825\;GHz$) WLAN was designed and fabricated by using SRR(Split Ring Resonator) with band rejection property. MWS(Micro-wave Studio) of CST company was utilized in the design stage. The antenna was fabricated on a substrate, Rogers 4003, with the thickness of 0.8 mm and relative permittivity of 3.38. The measured result shows that the proposed antenna has a good return loss below -10 dB and group delay below 1nsec over UWB communication band($3.1{\sim}10.6\;GHz$) except WLAN band. It also shows the omni-directional radiation pattern.

Growth of Bi:YIG Thick Films by Change of PO/Bi2O3 Molar Ratio (PO/Bi2O3 변화에 따른 Bi:YIC 단결정 후박의 성장)

  • 윤석규;김근영;김용탁;정현민;임영민;윤대호
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.589-593
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    • 2002
  • The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.