• Title/Summary/Keyword: substrate temperature microstructure

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Fabrication of textured Ni substrates for coated conductor prepared by powder metallurgy and plasma arc melting method (분말법과 주조법으로 제조한 coated conductor용 Ni 기판 개발)

  • 임준형;김정호;김규태;장석헌;주진호;나완수;홍계원;지봉기;김찬중
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.70-74
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    • 2003
  • We fabricated cube textured Ni substrate for YBCO coated conductor and evaluated the effects of processing parameters on microstructural evolution and texture formation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(PM) and plasma arc melting(PAM). Subsequently, the rods were cold rolled to 100 $\mu\textrm{m}$ thick substrate and annealed at temperatures of $700∼1200^{\circ}C$. The texture of the substrate was characterized by pole-figure. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 600∼$l100^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$$10^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the corresponding values were $9^{\circ}$$13^{\circ}$ at the temperature range. In addition, recrystallization twin texture, (221)<221>, was formed as the temperature increased further. OM profiles showed that the grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

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The Effect of Substrate Temperature on Superconducting Properties of YBCO Films Prepared by Spray Pyrolysis Method using Metal Nitrate Precursors (분사열분해 CVD 법으로 증착된 YBCO 박막의 특성에 미치는 기판 온도의 영향)

  • Kim, Jae-Geun;Hong, Suk-Kwan;Yu, Seok-Koo;Cho, Han-Woo;Kim, Byung-Joo;Ahn, Ji-Hyun;Hong, Gye-Won;Lee, Hee-Gyoun
    • Progress in Superconductivity
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    • v.9 no.1
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    • pp.102-106
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    • 2007
  • YBCO films have been synthesized using a spray pyrolysis method. We used nitrates of Y, Ba, Cu as precursors. Deposition was made on $LaAlO_3$ (100) single crystal substrate by spraying the mist of aqueous precursor solution generated by a concentric nozzle. The distance between concentric nozzle and substrate was 15 cm. C-axis oriented films were obtained at deposition temperature of $740{\sim}800^{\circ}C$ and working pressure of 20 Torr. Oxygen partial pressure was 3 Torr and substrate was transported with the speed ranging from 0.23 cm/min to 0.7 cm/min by reel to reel. Scanning electron microscope (SEM) and X-ray diffraction (XRD) observation revealed that films are smooth and highly textured with (001) planes parallel to substrate. Highest critical current density (Jc) was $1.38\;MA/cm^2$ at 77K and self-field for the film with a thickness of $0.5\;{\mu}m$ prepared at a substrate temperature of $780^{\circ}C$ and $PO_2\;=3\;Torr$. The effect of temperature on the microstructure and YBCO phase formation will be discussed.

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Mechanical Properties of Chemical Vapor Deposited SiC Coating Layer (화학증착법에 의하여 제조된 탄화규소 코팅층의 기계적 특성)

  • Lee, Hyeon-Keun;Kim, Jong-Ho;Kim, Do-Kyung
    • Journal of the Korean Ceramic Society
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    • v.43 no.8 s.291
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    • pp.492-497
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    • 2006
  • SiC coating has been introduced as protective layer in TRISO nuclear fuel particle of High Temperature Gas cooled Reactor (HTGR) due to excellent mechanical stability at high temperature. In order to inhibit the failure of the TRISO particles, it is important to evaluate the fracture strength of the SiC coating layer. ]n present work, thin silicon carbide coating was fabricated using chemical vapor deposition process with different microstructures and thicknesses. Processing condition and surface status of substrate.affect on the microstructure of SiC coating layer. Sphere indentation method on trilayer configuration was conducted to measure the fracture strength of the SiC film. The fracture strength of SiC film with different microstructure and thickness were characterized by trilayer strength measurement method nanoindentation technique was also used to characterize the elastic modulus and th ε hardness of the SiC film. Relationships between microstructure and mechanical properties of CVD SiC thin film were discussed.

Brazing Adhesion Properties of Ag Coated W-Ag Electric Contact on the Cu Substrate (Ag 코팅한 W-Ag 전기접점/Cu 모재간의 브레이징 접합 특성)

  • Kang Hyun-Goo;Kang Yun-Sung;Lee Jai-Sung
    • Journal of Powder Materials
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    • v.13 no.1 s.54
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    • pp.18-24
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    • 2006
  • The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

Degradation and Failure Analysis of Lead-free Silver Electrodes with Thermal Cycling (무연계 Ag 외부전극재의 열충격에 따른 열화특성과 고장해석)

  • Kim, Jung-Woo;Yoon, Dong-Chul;Lee, Hee-Soo;Jeon, Min-Seok;Song, Jun-Kwang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.434-439
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    • 2008
  • Silver pastes as the outer electrodes have been prepared using Pb-free glass frits with different content of $Bi_2O_3$ and the effects of glass composition on the degradation behaviors of the Ag electrodes were investigated using the change of adhesion between Ag electrode and alumina substrate with thermal cycle stress. Low adhesion and high surface resistance were observed in Ag electrode using glass frit with a $Bi_2O_3$ content of 60 wt%, owing to the open microstructure formed at the firing temperature of $600^{\circ}C$. When the $Bi_2O_3$ was increased to 80 wt% in the glass frit, the Ag electrodes had a dense microstructure with high adhesion and a low surface resistance. Delamination of the Ag electrodes was a major failure mode under thermal cycle stress and this was attributed to residual stress due to the thermal expansion mismatch between the Ag electrode and the alumina substrate.

Synthesis of WC-CrN superlattice film by cathodic arc ion plating system

  • Lee, Ho. Y.;Han, Jeon. G.;Yang, Se. H.
    • Journal of the Korean institute of surface engineering
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    • v.34 no.5
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    • pp.421-428
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    • 2001
  • New WC-CrN superlattice film was deposited on Si substrate (500$\mu\textrm{m}$) using cathodic arc ion plating system. The microstructure and mechanical properties of the film depend on the superlattice period (λ). In the X-ray diffraction analysis (XRD), preferred orientation of microstructure was changed according to various superlattice periods(λ). During the Transmission Electron Microscope analysis (TEM), microstructure and superlattice period (λ) of the WC - CrN superlattice film was confirmed. Hardness and adhesion of the deposited film was evaluated by nanoindentation test and scratch test, respectively. As a result of nanoindentation test, the hardness of WC - CrN superlattice film was gained about 40GPa at superlattice period (λ) with 7nm. Also residual stress with various superlattice period (λ) was measured on Si wafer (100$\mu\textrm{m}$) by conventional beam-bending technique. The residual stress of the film was reduced to a value of 0.2 GPa by introducing Ti - WC buffer layers periodically with a thickness ratio ($t_{buffer}$/$t_{buffer+superlattice}$ ). To the end, for the evaluation of oxidation resistance at the elevated temperature, CrN single layer and WC - CrN superlattice films with various superlattice periods on SKD61 substrate was measured and compared with the oxidation resistance.

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High Functional $GdB_2C_3O_{7-x}$ Thin Films Fabricated by Pulsed Laser Deposition

  • Song, S.H.;Ko, K.P.;Song, K.J.;Moon, S.H.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.8 no.4
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    • pp.15-18
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    • 2006
  • REBCO coated conductors (RE: rare earth elements) have recently drawn great attention since they are known to possess stronger flux pinning centers in high magnetic fields compared with YBCO coated conductors. In this study, $GdBa_2Cu_3O_{7-d}(GdBCO)$ was selected to investigate the influence of the distance between target and substrate and substrate temperature on the superconducting properties of GdBCO films on the $SrTiO_3(100)$ substrate. Samples were fabricated by pulsed laser deposition (PLD) with a Nd:YAG laser (355nm). Under a given oxygen pressure of 800mTorr, we changed the distance between target and substrate from 5.5cm to 7.0cm and the substrate temperature from $750^{\circ}C\;to\;850^{\circ}C$. The crystallinity and texture of GdBCO films were analyzed by X-ray diffraction (XRD), and the surface morphology was observed by the scanning electron microscopy (SEM). Tc and Jc values were measured by the four point probe method. High quality GdBCO films with Tc of 89.7K and Jc over $1MA/cm^2$ at 77 K in self field were successfully fabricated by optimizing processing parameters. The detailed processing conditions, microstructure and superconducting properties will be presented for a discussion.

Property and Microstructure Evaluation of Pd-inserted Nickel Monosilicides (Pd 삽입 니켈모노실리사이드의 물성과 미세구조 변화)

  • Yoon, Kijeong;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.46 no.2
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    • pp.69-79
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    • 2008
  • A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

A study on the Al cementation and formation of corrosion-resisting, hardening layer on the steel surface by the arc spray method (아크 용사법에 의한 강재표면에의 Aluminum침수 및 내식, 경화성 피막형성에 관한 연구)

  • 김영식;배차헌;오재환;문경만
    • Journal of Advanced Marine Engineering and Technology
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    • v.13 no.2
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    • pp.64-77
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    • 1989
  • In this study, the experiments were carried out for the purpose of establishment of aluminium cementation to steel surface by diffusible heat treatment after making the coated film onto the substrate by arc spray method. Also, the microstructure and mechanical properties of the cementation layer produced by this study were inspected for various heat treatment and spraying conditions. Main results obtained are as follow ; 1. The coating film characteristics which have excellent errosion-resistance, high temperature oxidation-resistance are obtained by aluminium penetration heat treatment after making the sprayed aluminum coating film onto the steel substrate. 2. Aluminium diffusion penetration takes place at higher temperature than 660.deg.C, and the more heat treatment time and the higher heat treatment temperature adopted, the deeper diffusion layer obtained. 3. Insert gas arc spraying using argon gas as the carrier gas higher improvement of mechanical property than that of compressed air environment. 4. The coating film characteristics appeared to be improvement of adhesive property, porosity plugging effect by heat treatment in air environment.

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Fabrication of Low Temperature Cofired Ceramic (LTCC) Chip Couplers for High Frequencies ; II. Effect of Sintering Process on Ag Diffusion (고주파용 저온 동시소성 세라믹(LTCC)칩 커플러 제조: II. Ag 이온 확산에 대한 소결공정의 영향)

  • 이선우;김경훈;심광보;구기덕
    • Journal of the Korean Ceramic Society
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    • v.36 no.5
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    • pp.490-496
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    • 1999
  • The sintering behavior of LTCC (low temperature cofired ceramics) chip couplers was investigated in relation with Ag diffusion at the interface of glass ceramic substrate-Ag electrode. Sintering temperature was in the range of 825$^{\circ}C$-975$^{\circ}C$. The commercial green sheet and silver electrode were used. Below 875$^{\circ}C$ the diffusion of the Ag ion into the substrate and the penetration of glassy phases into the electrode occurred due to an increase of fluidity. Thus the lectrode line was severely deformed and damaged. At 975$^{\circ}C$ the transformation of crystalline phases into glassy phases and the melting of the Ag electrode resulted in the diffusion of the considerable amount of Ag ions.

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