• Title/Summary/Keyword: substrate loss

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Wideband dielectric modeling and transmission analysis of FR-4 composite substrate with different composition ratio (FR-4 composite 기판의 성부 구성비에 따른 광대역 유전상수 모델 및 전송 특성 해석)

  • 홍정기;김성일;이해영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.33-38
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    • 1996
  • In this paper, we modeled the complex dielectric constant and analyzed the projpagation characteristics of a FR-4 composite substrate with different compositions. From the wideband dielectric modeling and the propagation loss analysis of FR-4 composites that consists of FR-4 resin and E-glass reinforcement,we have found that the propagation loss and velocity increase with the volume fraction of FR-4 resin above 1 GHz. These results are helpful in determining to deisgn optimum substrate composition ratio and cross-sectional geometry of high-speed and high-density transmission line.

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Design of Inductive coupled wideband LC Balun Embedded Into Organic Substrate (유기기판에 내장된 인덕터의 커플링을 이용한 광대역 LC 발룬의 설계)

  • Park, Jong-C.;Park, Jae-Y.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1502-1503
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    • 2007
  • In this paper, inductive coupled LC balun has been desi gned and simulated for embedding into an organic packaging substrate. Inductive coupling method was applied to obtain wide band characteristics, and high dielectric film was utilized to reduce a size of the balun. The proposed balun has a novel scheme which consists of three embedded LC resonators with inductive coupling. This proposed balun has relatively small inductance and capacitance values which can be easily embedded into the organic packaging substrate. Furthermore, it has a good phase imbalance characteristic. The simulated results of proposed balun are an insertion loss of 1.2 dB, a return loss of 10 dB, a phase imbalance of 1 degree at frequency bandwidth of 750 MHz ranged from 1.8 GHz to 2.55 GHz, respectively. This balun has an area of $2mm{\tims}3.5mm{\times}0.66mm$ (height).

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High-performance filtering power divider based on air-filled substrate integrated waveguide technology

  • Ali-Reza Moznebi;Kambiz Afrooz;Mostafa Danaeian
    • ETRI Journal
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    • v.45 no.2
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    • pp.338-345
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    • 2023
  • A filtering power divider based on air-filled substrate-integrated waveguide (AFSIW) technology is proposed in this study. The AFSIW structure is used in the proposed filtering power divider for substantially reducing the transmission losses. This structure occupies a large area because of the use of air as a dielectric instead of typical dielectric materials. A filtering power divider provides power division and frequency selectivity simultaneously in a single device. The proposed filtering power divider comprises three AFSIW cavities. The filtering function is achieved using symmetrical inductive posts. The input and output ports of the proposed circuit are realized by directly connecting coaxial lines to the AFSIW cavities. This transition from the coaxial line to the AFSIW cavity eliminates the additional transitions, such as AFSIW-SIW and SIW-conductor-backed coplanar waveguide, applied in existing AFSIW circuits. The proposed power divider with a second-order bandpass filtering response is fabricated and measured at 5.5 GHz. The measurement results show that this circuit has a minimum insertion loss of 1 dB, 3-dB fractional bandwidth of 11.2%, and return loss exceeding 11 dB.

Measurement & Analysis of Transport Current AC loss in Coated Conductor Bifilar Structure (Coated Conductor의 Bifilar 구조에서의 통전 교류 손실 측정 및 해석)

  • Bang, J.S.;Park, D.K.;Sim, K.D.;Jang, K.S.;Yang, S.E.;Ahn, M.C.;Kang, H.K.;Seok, B.Y.;Ko, T.K.
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.1
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    • pp.22-26
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    • 2007
  • Superconductor is weak in AC condition. Bifilar geometry provides a solution to reduce AC loss. Bifialr geometry is piled up or wound with more than two layers. When a layer of superconductor abuts on other layers, AC loss is affected by not only self-field, but also magnetic field induced by adjacent layers. In this study, two superconductors are piled up as a series connection so that current flows in different directions. By this method, magnetic field is cancelled. If magnetic field is cancelled, AC loss is reduced. To compare AC loss with respect to piling method, we measured the AC loss difference between the case facing each other with substrate side and the case facing with YBCO side. Measured AC loss is compared with one-way current flow single layer AC loss. In addition, we analyzed how much AC loss was increased, or reduced. All results were compared with those calculated with Norris equation. By this experiment, we concluded that distance between two wires is the important cause of AC loss. The distance between two wires affects magnetic field reduction in YBCO and induced current flow on substrate side.

Wafer Level Packaging of RF-MEMS Devices with Vertical feed-through (Ultra Thin 실리콘 웨이퍼를 이용한 RF-MEMS 소자의 웨이퍼 레벨 패키징)

  • 김용국;박윤권;김재경;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1237-1241
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    • 2003
  • In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

Three-dimensional natural convection cooling of the electronic device with the effects of convective heat dissipation and vents (전자장비에서 벽면의 대류열방출 및 통기구의 효과를 고려한 3차원 자연대류 냉각)

  • ;;;Baek, Chang-In;Lim, Kwang-Ok
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.11
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    • pp.3072-3083
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    • 1995
  • The numerical simulation on the three-dimensional natural convection heat transfer in the enclosure with heat generating chip is performed, and the effects of convective heat loss and vents are also examined. The effects of the Rayleigh number and outer Nusselt number (Nu$_{0}$) on the maximum chip temperature and the fractions of heat loss from the hot surfaces are investigated. The results show that conduction through the substrate is dominant in heat dissipation. With the increase of Rayleigh number, heat dissipation through the chip surfaces increases and heat loss through the substrate decreases. Maximum dimensionless temperature with vents is found to decrease about 40% compared to the one without vents at Nu$_{0}$=0.l. It is also shown that effects of size and location of the vents are negligible.ble.

Simulated Study on the Effects of Substrate Thickness and Minority-Carrier Lifetime in Back Contact and Back Junction Si Solar Cells

  • Choe, Kwang Su
    • Korean Journal of Materials Research
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    • v.27 no.2
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    • pp.107-112
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    • 2017
  • The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., $5{\times}10^{-4}sec$ vs. $5{\times}10^{-5}sec$. Regardless of substrate thickness up to $150{\mu}m$, the power output in the BCBJ cell stays at nearly the maximum value of about $1.8{\times}10^{-2}W{\cdot}cm^{-2}$, or $18mW{\cdot}cm^{-2}$, as long as the recombination lifetime is $5{\times}10^{-4}s$ or longer. The output power, however, declines steeply to as low as $10mW{\cdot}cm^{-2}$ when the recombination lifetime becomes significantly shorter than $5{\times}10^{-4}sec$. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.

Effects of the Dielectric Constant and Thickness of a Feed Substrate on the Characteristics of an Aperture Coupled Microstrip Patch Antenna (급전 기판의 유전상수 및 두께가 개구면 결합 마이크로스트립 패치 안테나의 특성에 미치는 영향)

  • Bak, Hye-Lin;Koo, Hwan-Mo;Kim, Boo-Gyoun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.7
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    • pp.49-59
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    • 2014
  • Effects of the dielectric constant and thickness of a feed substrate on the bandwidth and radiation characteristics of an aperture coupled microstrip patch antenna (ACMPA) are investigated. The optimized return loss bandwidth of an ACMPA increases without the degradation of radiation characteristics as the feed substrate dielectric constant increases for the same feed substrate thickness. The optimized return loss bandwidth of an ACMPA with the dielectric constant of a feed substrate of 10, which is compatible with the high dielectric constant monolithic microwave integrated circuit (MMIC) materials, increases without the degradation of radiation characteristics as the thickness of a feed substrate decreases. The ACMPA configuration is suitable for integration with MMICs.

A Wideband Ridge SIW-to-SIW Transition for Microwave Applications (초고주파 응용을 위한 광대역 Ridge SIW와 SIW 전이 구조)

  • Jeon, Jiwon;Byun, Jindo;Lee, Hai-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.3
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    • pp.270-277
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    • 2013
  • In this paper, we propose a wideband ridge SIW(Ridge Substrate Integrated Waveguide)-to-SIW(Substrate Integrated Waveguide) transition. The proposed transition structure is designed to acquire a wide bandwidth by inserting through via holes at the regular interval for an impedance matching and an E-field mode matching method. The measurement results show a fractional bandwidth is 29.1 % at 20 dB return loss from the center frequency(11 GHz). The maximum insertion loss is 0.49 dB from 9.21 GHz to 12.41 GHz.

40 GHz Vertical Transition with a Dual-Mode Cavity for a Low-Temperature Co-fired Ceramic Transceiver Module

  • Byun, Woo-Jin;Kim, Bong-Su;Kim, Kwang-Seon;Eun, Ki-Chan;Song, Myung-Sun;Kulke, Reinhard;Kersten, Olaf;Mollenbeck, Gregor;Rittweger, Matthias
    • ETRI Journal
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    • v.32 no.2
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    • pp.195-203
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    • 2010
  • A new vertical transition between a substrate integrated waveguide in a low-temperature co-fired ceramic substrate and an air-filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air-filled waveguide. Physical characteristics of an air-filled WR-22 to WR-22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a -1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back-to-back module. A 40 GHz low-temperature co-fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm ${\times}$ 28 mm ${\times}$ 3.3 mm.