• Corrosion Science and Technology
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• 제7권6호
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• pp.301-306
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• 2008

Surface composite layers of 1.9~2.9 mm in thickness were fabricated by depositing metamorphic powders on a carbon steel substrate and by irradiating with a high-energy electron beam. In the surface composite layers, 48~64 vol.% of $Cr_{2}B$ or $Cr_{1.65}Fe_{0.35}B_{0.96}$ borides were densely precipitated in the austenite or martensite matrix. These hard borides improved the hardness of the surface composite layer. According to the otentiodynamic polarization test results of the surface composites, coatings, STS304 stainless steel, and carbon steel substrate, the corrosion potential of the surface composite fabricated with 'C+' powders was highest, and its corrosion current density was lowest, while its pitting potential was similar to that of the STS304 steel. This indicated that the overall corrosion resistance of the surface composite fabricated with 'C+' powders was the best among the tested materials. Austenite and martensite phases of the surface composites and coatings was selectively corroded, while borides were retained inside pits. In the coating fabricated with 'C+' powders, the localized corrosion additionally occurred along splat boundaries, and thus the corrosion resistance of the coating was worse than that of the surface composite.

• 한국초전도ㆍ저온공학회논문지
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• 제23권4호
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• pp.10-13
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• 2021

Recently, cable conductors composed of numerous coated conductors have been developed to transport huge current for large-scale applications, for example accelerators and fusion reactors. Various cable conductors such as CORC (Conductor on round core), Roebel Cable, and TSTC (Twisted stacked tape cable) have been designed and tested to apply for large-scale applications. But, these cable conductors cannot improve the engineering critical current density (J_e) because they are made by simple stacking of coated conductors. In this study, multi-HTS (High temperature superconductor) layers on one substrate (MHOS) wire was fabricated to increase the engineering critical current density by using the exfoliation of superconducting layer from substrate and silver diffusion bonding method. By the repetition of these processes, the 10 m long 6-layer MHOS conductor was successfully fabricated without any intermediate layers like buffer or solder. 6-layer MHOS conductor exhibited a high critical current of 2,460A/12mm-w. and high engineering critical current density of 1,367A/mm² at liquid nitrogen temperature.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.113-116
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• 2003

The growth properties of $Y_2$O$_3$ and CeO$_2$ films for the buffer layers on Ni tapes were studied comparatively. The water vapor larger than 2$\times$10$^{-5}$ Torr and the substrate temperature higher than $700^{\circ}C$ were required for the proper growth of $Y_2$O$_3$ films, while the upper limits of the water vapor and the lower limit of the substrate temperatures for the proper growth of CeO$_2$ were 1$\times$10$^{-5}$ Torr and 50$0^{\circ}C$, respectively. These imply that the windows of the growth conditions of CeO$_2$ are wider than those of $Y_2$O$_3$. However the formation of cracks in CeO$_2$ films were its disadvantage, while $Y_2$O$_3$ showed no cracks. PACS. No 85.25.K, 81.15.A.

• 한국표면공학회지
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• 제56권2호
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• pp.115-124
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• 2023

Anodization is an electrochemical process that electrochemically converts a metal surface into an oxide layer, resulting in enhanced corrosion resistance, wear resistance, and improved aesthetic appearance. Local anodization, also known as selective anodization, is a modified process that enables specific regions or patterns on the metal surface to undergo anodization instead of the entire surface. Several methods have been attempted to produce oxide layers via localized anodic oxidation, such as using a mask or pre-patterned substrate. However, these methods are often intricate, time-consuming, and costly. Conversely, the direct writing or patterning approach is a more straightforward and efficient way to fabricate the oxide layers. This review paper intends to enhance our comprehension of local anodization and its potential applications in various fields, including the development of nanotechnologies. The application of anodization is promising in surface engineering, where the anodic oxide layer serves as a protective coating for metals or modifies the surface properties of materials. Furthermore, anodic oxidation can create micro- and nano-scale patterns on metal surfaces. Overall, the development of efficient and cost-effective anodic oxidation methods is essential for the advancement of various industries and technologies.

• 마이크로전자및패키징학회지
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• 제6권4호
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• pp.1-7
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• 1999

MCM-D 기판에 수동소자를 내장시키는 공정을 개발하였다. MCM-D 기판은 Cu/감광성 BCB를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/cu를 각각 1000$\AA$/3000$\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 um Cu를 형성하였으며, BCB 층에 신뢰성있는 비아형성을 위하여 BCB의 공정특성과 $C_2F_6$를 사용한 플라즈마 cleaning영향을 AES로 분석하였다. 이 실험에서 제작한 MCM-D 기판은 절연막과 금속배선 층이 각각 5개, 4개 층으로 구성되는데 저항은 2번째 절연막 위에 thermal evaporator 방식으로 NiCr을 600$\AA$증착하여 시트저항이 21 $\Omega$/sq가 되게 형성하였고. 인덕터는 coplanar 구조로 3, 4번째 금속배선층에 형성하였으며, 커패시터는 절연막으로 PECVD $Si_3N_4$를 900$\AA$증착한 후 1, 2번째 금속배선층에 형성하여 88nF/$\textrm {cm}^2$의 커패시턴스를 얻었다. 이 공정은 PECVD $Si_3N_4$와 thermal evaporation NiCr 공정을 이용함으로써 기존의 반도체 공정을 이용하여 MCM-D 기판에 수동소자를 안정적으로 내장시킬 수 있었다.

• 한국재료학회지
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• 제27권8호
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• pp.403-408
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• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• 한국표면공학회지
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• 제35권3호
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국표면공학회지
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• 제29권6호
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• pp.847-850
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• 1996

The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.