• Tribology and Lubricants
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• v.32 no.2
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• Journal of Environmental Science International
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• v.22 no.3
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• pp.309-318
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• 2013

This study was conducted for determining the influence of artificial structures on benthic macroinvertebrate communities in stream. Sampling was taken at upper(pool), down(riffle) and control(riffle) from two check dams, two weirs, one agricultural reservoir, and one multipurpose dam in northern part of Gyeongsangbuk-do. The benthic macroinvertebrate communities of these structures were surveyed during 2009 to 2011. The simple habitat of benthic macroinvertebrates occurred at the upper sites due to pooling effects from artificial structures. Specifically, Check dam1, Jusanji, Imha dam showed very low biological attribute values compared to the down and control sites, which have greater difference in substrate characteristics. However, in the upper sites of Check dam2, Weir1 and Weir2, the difference of values of biological attributes was relatively smaller. Also, proportion of functional feeding groups and functional habit groups were relatively simpler at upper stream and the degree of community differences was greater between upper and down, control sites. Spearman's correlation between biological attributes and substrate characteristics, water quality parameters had significant correlations; particularly, the substrate characteristics were more significantly related. In conclusion, the pool caused by artificial structures had negative effects on benthic macroinvertebrate communities thus leading to simplified stream habitats at upper stream ecosystems.

• Journal of Mushroom
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• v.16 no.3
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• pp.170-174
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• 2018

This study aims to investigate the antifungal and protective effects of water- and 70% methyl alcohol-extracts from spent mushroom substrate (WESMS and MeOHSMS) of Lentinula edodes, on Botrytis cinerea- the causative agent for gray mold disease in ginseng. MeOHSMS inhibited mycelial growth and spore germination of Botrytis cinerea, by 75% and 95%, respectively. MeOHSMS could suppress gray mold disease of ginseng seedlings by 80% and effectively reduce the disease severity by 60%. Compared to the treatment of ginseng leaves with WESMS and DL-${\beta}$-aminobutyric acid (BABA), the MeOHSMS treatment increased the phenolic compounds in the leaves by 36% and 18%, respectively. These results suggest that the SMS extracts suppress gray mold disease in ginseng via dual functions: antifungal activity and increase in a plant defense factor-phenolic compounds.

• The Korean Journal of Mycology
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• v.24 no.3 s.78
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• pp.223-227
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• 1996

The effects of addition of dried apple pomace to sawdust substrate on the growth of Flammulina velutipes were investigated during the period of 2 years $(1994{\sim}1995)$. Dried apple pomace used in this study consisted of 44.6% C, 0.54% N, 0.16% CaO, 0.16% $P_2O_5$, 0.11% MgO and 1.29% $K_2O$ (pH 4.4). The addition of 15% apple pomace (v/v) increased the yield of the mushroom fruitbody by 9%, and period of primordia formation was similar regardless of the treatments. In economical analysis, the addition of 15% apple pomace (v/v) increased 29% compared to the control treatment in relative income.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.14-17
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• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.78-79
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• 2007

In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.11
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• pp.36-43
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• 2008

In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.219-219
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• 2012

The formation and thermal desorption behaviors of octanethiol (OT) SAMs on single crystalline Au (111) and polycrystalline Au, Ag, and Cu substrates were examined by X-ray photoelectron microscopy (XPS), thermal desorption spectroscopy (TDS), and contact angle (CA) measurements. XPS and CA measurements revealed that the adsorption of octanethiol (OT) molecules on these metals led to the formation of chemisorbed self-assembled monolayers (SAMs). Three main desorption fragments for dioctyl disulfide (C8SSC8+, dimer), octanethiolate (C8S+), and octanethiol (C8SH+) were monitored using TDS to understand the effects of surface morphology and the nature of metal substrates on the thermal desorption behavior of alkanethiols. TDS measurements showed that a sharp dimer peak with a very strong intensity on single crystalline Au (111) surface was dominantly observed at 370 K, whereas a broad peak on the polycrystalline Au surface was observed at 405 K. On the other hand, desorption behaviors of octanethiolates and octanethiols were quite similar. We concluded that substrate morphology strongly affects the dimerization process of alkanethiolates on Au surfaces. We also found that desorption intensity of the dimer is in the order of Au＞＞Ag＞Cu, suggesting that the dimerization process occurs efficiently when the sulfur-metal bond has a more covalent character (Au) rather than an ionic character (Ag and Cu).

• Journal of Surface Science and Engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.