Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)
- 2007.04a
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- Pages.78-79
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- 2007
Effects of $N_2$ addition on chemical etching of silicon nitride layers in $F_2/Ar/N_2$ remote plasma processing
- Park, S.M. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Kim, H.W. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Kim, S.I. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Yun, Y.B. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Lee, N.E. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
- Published : 2007.04.05
Abstract
In this study, chemical dry characteristics of silicon nitride layers were investigated in the
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