• Korean Journal of Microbiology
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• v.46 no.2
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• pp.223-227
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• 2010

RNase E plays a major role in the degradation and processing of a large number of RNA transcripts in Escherichia coli and forms the core component of the degradosome, a large protein complex involved in RNA metabolism. RraA and RraB are recently discovered protein inhibitors of RNase E and are evolutionarily conserved. In this study, we observed that, unlike RraA, overexpression of RraB did not rescue growth arrest of E. coli cells overexpressing RNase E. To examine whether this phenomenon stems from differential inhibitory effects of RraA and RraB on RNase E substrates, we analyzed three in vivo RNase E substrates. The results showed that RraA inhibited RNase E activity more efficiently than RraB on the degradation of RNA I, which controls the copy number of ColE1-type plasmid, and rpsO mRNA encoding ribosomal protein S15, while RraB was unable to inhibit the processing of pM1 RNA, a precursor of the RNA component of RNase P, by RNase E. Our results imply that RraB inhibits RNase E activity in a more substrate-dependent manner than RraA and this property of RraB may explain why overexpression of RraB could not rescue cells overexpressing RNase E from growth arrest.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.89-94
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• 2004

We have investigated magnetic properties of monolayer (ML)-thickness Co film deposited on InP(2${\times}$4) reconstruction surface using in situ Surface Magneto-Optical Kerr Effects (SMOKE) measurement system. InP(2${\times}$4) reconstruction surface, obtained by repeated sputtering and annealing, was confirmed by reflection hish energy electron diffraction (RHEED) and scanning tunneling microscope (STM) measurements. From both longitudinal and polar SMOKE measurements, we have observed three distinguishable regions showing different magnetic properties depending on the Co thickness. In the Co film thickness smaller than 7 $m\ell$, no SMOKE signal was detected. In the following thickness between 8 $m\ell$ and 15 $m\ell$, both longitudinal and polar Kerr hysteresis loops were observed, which implies a metastable phase coexisted of in-plane and perpendicular anisotropies. In the film thickness larger than 16 $m\ell$, only longitudinal MOKE signal without polar signal was detected, which implies existence of in-plane anisotropy in this thickness region.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Microbiology and Biotechnology Letters
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• v.26 no.3
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• pp.195-199
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• 1998

AH alkalophilic Bacillus SP. AIk-7, isolated from soil, produced ethylene. The characteristics of this microorganism is the ability to grow well under the alkaline condition, at pH 10.3. This strain is similar to Bacillus alkalophilus in terms of morphological, physiological and biological characteristics. In observation of relationship of cell growth and ethylene production according to incubation times, the ethylene synthesis mostly occur from the late exponential phase to the death phase of growth. The purpose of this paper is to study the effects of various substrates on the biosynthesis of ethylene in the intact cell and the cell-free system by the Bacillus sp. AIk-7. In both intact cell and cell-free extract, optimum conditions for ethylene production was achieved at pH 10.3 and 3$0^{\circ}C$. Ethylene was effectively produced from L-Met and 1-aminocyclopropane-1-carboxylic acid (ACC). In this case, ACC as the substrate on ethylene production were two fold higher than L-met at each concentration of substrates. On the other hand, the cell-free ethylene-forming system was used as a tool for the elucidation of the biochemical reaction involved in the formation of ethylene by Bacillus sp. AIk-7. Ethylene production in the cell-free system required the presence of manganese and cobalt ion to be stimulated a little. The result obtained in this work suggests that L-met and ACC may be a precursor more directly related to bacterial ethylene production than any other substrates tested.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.44 no.6
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• pp.791-795
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• 2011

This study examined the inhibitory activity of Ecklonia cava (EC) against ${\alpha}$-amylase to evaluate the availability of EC extract as a functional food agent. To verify the inhibitory activity of EC against porcine pancreatic ${\alpha}$-amylase, potato starch was used as a substrate. This analysis revealed that EC ethanol extract exhibited high ${\alpha}$-amylase inhibitory activity. For potential application within the food industry, the stability of the activity of EC ethanol extract under various heat and pH conditions was examined. The ${\alpha}$-amylase inhibitory activity of EC ethanol extract was not affected by the heat and pH treatment conditions used in this study. These results suggest that EC has the potential for development as a functional food agent.

• Korean Journal of Food Science and Technology
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• v.27 no.4
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• pp.564-570
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• 1995

N-Benzoyl-L-aspartyl-L-phenylalanine methyl ester(BzAPM), a novel aspartame precursor, was investigated for its enzymatic synthesis by immobilized thermolysin using a water-miscible organic solvent system. The substrate used were N-benzoyl-L-aspartic acid(BzAsp) and L-phenylalanine methyl ester (PheOMe). Synthetic conditions such as substrates concentration, temperature, pH, and some metallic ions were varied to study their effects on BzAPM synthesis. The synthetic reaction rate increased linearly as the PheOMe concentration increased at a constant concentration of BzAsp(100 mM), and the maximum reaction rate was obtained at BzAsp concentration of 200 mM when 300 mM PheOMe was used. The optimum pH and temperature were found to be 6.1 and $40^{\circ}C$, respectively. The metallic ions such as $Zn^{2+},\;Mg^{2+},\;Mn^{2+},\;Fe^{2+},\;Pb^{2+}\;and\;Cu^{2+}$ at 5 mM level showed inhibitory effect on BzAPM synthesis, while $Co^{2+}$ and $Ca^{2+}$ ion increased synthesis. $Co^{2+}$ ion was also found to have synergistic effect with $Ca^{2+}$ ion. Benzoic acid, L-phenylalanin and NaCl showed inhibitory effect.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.45-51
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• 2020

As flexible electronics will be used under high temperature and high humidity with repeated bending deformations, the effects of environmental condition and repeated mechanical deformations are considered simultaneously to achieve long-term reliability. In this study, the mechanical reliability of metal electrodes (Al, Ag, Cu) deposited on flexible polymer substrate is investigated under 4 different conditions: with and without repeated mechanical deformations and normal environmental or high temperature and high humidity conditions (85℃/85%). The mechanical failure does not occur in all the metal electrodes without mechanical deformation even under high temperature and high humidity conditions. The electrical resistance of metal electrode increased about 400% to 600% after 100,000 bending cycles under normal condition. For high temperature and high humidity condition, the electrical resistance of Al and Ag increased similarly. However, the resistance of Cu during bending fatigue test under high temperature and high humidity condition increased over 90000% because of the combined effect of corrosion and mechanical fatigue. This study can give a helpful information for designing electrode materials with high mechanical reliability under high temperature and high humidity.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1019-1026
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• 2017

The structural properties of $HfO_2$ films could be improved by calibrating the working pressure owing to the enhanced quality of a thin film. We deposited $HfO_2$ films on glass substrates by radio frequency (RF) magnetron sputtering under a base vacuum pressure lower than $4.5{\times}10^{-6}Pa$, RF power of 100 W, substrate temperature of $300^{\circ}C$. The working pressures were varied from 1 mTorr to 15 mTorr. Subsequently, their structural and optical properties were investigated. In particular, the $HfO_2$ film deposited at 1 mTorr had superior properties than the others, with a crystallite size of 10.27 nm, surface roughness of 1.173 nm, refractive index of 2.0937 at 550 nm, and 84.85 % transmittance at 550 nm. These results indicate that the $HfO_2$ film deposited at 1 mTorr is suitable for application in transparent electric devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.12
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• pp.1059-1068
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• 2016

This paper proposes slow wave structure(SWS) utilized to increase antenna gain of printed dipole antenna(PDA) and to suppress sidelobe level simultaneously, and makes sure of electrical characteristics of the antenna according to parameter variations of components of the slow wave structure. The printed slow wave structure which is composed of a dielectric substrate and a metal rods array is located on excited direction of the PDA, affecting the radiation pattern and its intensity. Parasitic elements of the metal rods are arrayed in narrow consistent gap and have a tendency to gradually decrease in length. In this paper, array interval, element length, and taper angle are selected as the parameter of the parasitic element that effects radiation characteristics. Magnitude and phase distribution of the electrical field are observed and analyzed for each parameter variations. On the basis of these results, while the radiation pattern is analyzed, array methods of parasitic elements of the SWS for high gain characteristics are provided. The proposed antenna is designed to be operated at the Wifi band(5.15~5.85 GHz), and parameters of the parasitic element are optimized to maximize antenna gain and suppress sidelobe. Simulated and measured results of the fabricated antenna show that it has wide bandwidth, high efficiency, high gain, and low sidelobe level.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.245-252
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• 2016

In this paper, the design of a double-dipole quasi-Yagi antenna (DDQYA) with a gain over 7 dBi at 1.70-2.70 GHz band is studied. The proposed DDQYA consists of two strip dipoles with different lengths and a ground reflector, which are connected trough a coplanar stripline. The length of the second dipole is adjusted to increase the gain in the low frequency band, whereas a rectangular patch director is appended to the DDQYA to enhance the gain in the middle and high frequency band. The effects of the length of the second dipole, and the length and width of the director on the antenna performance are analyzed, and final design parameters to obtain a gain over 7 dBi are obtained. A prototype of the proposed DDQYA is fabricated on an FR4 substrate, and the experimental results show that the antenna has a frequency band of 1.60-2.86 GHz for a VSWR < 2, and measured gain ranges 7.2-7.6 dBi at 1.70-2.70 GHz band.