• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.805-808
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• 2010

In this paper, CdS thin films, which were widey used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, and effects of temperature of reaction solution on the structural properties were investigated. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And ammonium acetate was used as the buffer solution. The reaction velocity was increased with increasing temerature of reaction solution. For temperature <= $85^{\circ}C$, as increasing temperature of solution, deposition rate of CdS films was increased by ion-by-ion reaction in the substrate surface, and the crystallinity of the films was improved. However, for temperature <= $55^{\circ}C$, deposition rate was decreased resulting from smaller Cd2+ ion, and the grain size was decreased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2351-2358
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• 2014

In this paper, a design method for a compact CPW-fed slot antenna using SRRs is studied. The structure of the proposed slot antenna is a rectangular slot antenna loaded with SRR conductors inside the slot to reduce the antenna size. Optimal design parameters are obtained by analyzing the effects of the gap between the SRR conductors and slot, and the width of the SRR conductors on the input VSWR characteristic. The optimized compact slot antenna operating at 2.45 GHz band is fabricated on an FR4 substrate with a dimension of 36 mm by 30 mm. The length of the proposed compact slot antenna is reduced to 14.3% compared to that of a conventional rectangular slot antenna. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.4-2.49 GHz for a VSWR < 2, and measured gain of 2.3 dBi at 2.45 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.12
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• pp.2763-2768
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• 2013

In this paper, a design method for a compact slot antenna for 5.8 GHz RFID band (5.725-5.875 GHz) is studied. The proposed slot antenna is size-reduced by bending both ends of the straight slot in "I"-shape, and a rectangular feed patch is located inside the slot. The effects of slot length, location of feed patch, and width and length of feed patch on the antenna performance are examined. A prototype antenna with optimized parameters for 5.8 GHz band is fabricated on an FR4 substrate and tested experimentally to verify the results of this study. The experimental results show that the frequency band for a VSWR < 3 ranges 5.72-6.13 GHz (bandwidth 410 MHz), and it corresponds fairly well with the simulated band 5.64-5.97 GHz (bandwidth 330 MHz). The fabricated antenna shows good radiation performance such as maximum power density in both directions normal to the slot plane, low cross-polarization level of < -20 dB, and realized gain > 0 dBi within the frequency band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.8
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• pp.1492-1497
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• 2017

In this paper, a design method for a CPW-fed wideband loop antenna for indoor digital TV applications is studied. The proposed loop antenna consists of a square loop and two circular sectors which connect the loop with central feed points, and the CPW feed line is inserted in the lower circular sector. The CPW feed line is designed to match with the 75 ohm port impedance for DTV applications, and the ground slots are etched in order to improve the impedance matching in the middle frequency region. The effects of the gap between the circular sectors and the location and dimension of the ground slots on the input reflection coefficient and gain characteristics are examined to obtain the optimal design parameters. The optimized antenna is fabricated on FR4 substrate, and the experiment results show that it operates in the frequency band of 463-1,280 MHz for a VSWR < 2, which assures the operation in the DTV band.

• Journal of Surface Science and Engineering
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• v.38 no.3
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• pp.106-111
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• 2005

Ternary Ti-B-C coatings were synthesized on WC-Co and Si wafers substrates by a PECVD technique using a gaseous mixture of $TiCl_4,\;BCl_3,\;CH_4,\;Ar,\;and\; H_2$. The effects of deposition variables such as substrate temperature, gas ratio, $R_x=[BCl_3/(CH_4+BCl_3)]$ on the microstructure and mechanical properties of Ti-B-C coatings were investigated. From our instrumental analyses, the synthesized Ti-B-C coatings was confirmed to be composites consisting of nanocrystallites TiC, quasi-amorphous TiB2, and amorphous carbon at low boron content, on the contrary, nanocrystallites $TiB_2$, quasi-amorphous TiC, and amorphous carbon at relatively high boron content. The microhardness of the Ti-B-C coatings increased from $\~23 GPa$ of TiC to $\~38 GPa$ of $Ti_{0.33}B_{0.55}C_{0.11}$ coatings with increasing the boron content. The $Ti_{0.33}B_{0.55}C_{0.11}$ coatings showed lower average friction coefficient of 0.45, in addition, it showed relatively better wear behavior compared to other binary coatings of $TiB_2$ and TiC. The microstruture and microhardness value of Ti-B-C coatings were largely depend on the deposition temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.19-25
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• 2015

In this paper, a design method for a CPW-fed slot antenna for harmonic suppression is studied. The structure of the proposed slot antenna is a rectangular slot antenna appended with stepped impedance resonators (SIRs) at both ends of the slot symmetrically. Optimal design parameters are obtained by analyzing the effects of the length and width of the SIRs on the input reflection coefficient. The optimized harmonic-suppressed slot antenna operating at 2.45 GHz WLAN band is fabricated on an FR4 substrate with a dimension of 42 mm by 30 mm. The slot length of the proposed harmonic-suppressed slot antenna is reduced to 33.3% compared to that of a conventional rectangular slot antenna owing to the appended SIRs. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.39-2.49 GHz for a VSWR < 2, and a measured gain of 2.5 dBi at 2.45 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.3-4
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• 2006

In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.

• Journal of radiological science and technology
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• v.27 no.2
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• pp.45-50
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• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.238-244
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• 2005

IZO thin films are prepared on a corning 7059 glass substrate in a mixed gases of Ar +$O_2$ by rf-magnetron sputtering, using a powder target with a composition ratio of $In_{2}O_{3}$ : ZnO=90 : 10 $wt.\%$. Their electrical sheet resistance are strongly dependent on the oxygen concentration introduced during the deposition, a minimum resistivity of $3.7\times10^{-4}\Omega\cdot$ cm and an average transmittance over $85\%$ in the visible range are obtained in a film deposited in pure Ar gas which is close to near the stoichiometry. During the heat treatment from room temperature up tp $600^{\circ}C$ in various environments, the electrical resistance changes are explained by cyrstallizations or oxidizations of In metal and InO contained in the IZO film. The electrical properties due to oxygen adsorption and phase transitions occurring at temperatures over $40000^{\circ}C$ during heat treatment in air are also investigated.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.