• East Asian mathematical journal
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• 제40권1호
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• pp.1-23
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• 2024

Let M be a semi-invariant submanifold of codimension 3 with almost contact metric structure (𝜙, 𝜉, 𝜂, g) in a complex space form M_n+1(c). We denote by A, K and L the second fundamental forms with respect to the unit normal vector C, D and E respectively, where C is the distinguished normal vector, and by R_𝜉 = R(𝜉, ·)𝜉 the structure Jacobi operator. Suppose that the third fundamental form t satisfies dt(X, Y) = 2𝜃g(𝜙X, Y) for a scalar 𝜃(≠ 2c) and any vector fields X and Y , and at the same time R_𝜉K = KR_𝜉 and ∇_{𝜙∇𝜉𝜉}R_𝜉 = 0. In this paper, we prove that if it satisfies ∇_𝜉R_𝜉 = 0 on M, then M is a real hypersurface of type (A) in M_n(c) provided that the scalar curvature $\bar{r}$ of M holds $\bar{r}-2(n-1)c{\leq}0$.

• 한국결정성장학회지
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• 제32권4호
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• pp.136-142
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• 2022

Dy₂O₃ 첨가량에 따른 BaTiO₃의 결정구조, 입자성장 거동 및 유전특성에 대해 연구하였다. 고상합성법으로 (100-x) BaTiO₃-xDy₂O₃(mol%, x = 0, 0.5, 1.0, 2.0) 비율로 합성하고, 공기 중 1250℃에서 2시간 동안 소결하였다. Dy₂O₃가 첨가되면서 소결체의 결정구조는 정방정계 구조에서 입방정계 구조로 전이되어 tetragonality(c/a)가 감소하였다. 또한, Dy₂O₃가 첨가 시 Ba₁₂Dy_4.67Ti₈O₃₅은 이차상이 확인되었다. Dy₂O₃의 첨가량이 증가할수록 소결 후 평균입자의 크기가 감소하고 비정상 입자성장 거동을 보였다. 이를 통해 Dy₂O₃가 첨가된 BaTiO₃의 입자성장은 이차원 핵생성 및 성장에 의해 입자성장이 일어나고 계면 반응이 지배적인 것으로 판단할 수 있다. 또한, 결정구조 및 미세구조와 유전특성과의 상관관계에 대해서 고찰하였다.

• 전기전자학회논문지
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• 제28권1호
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• pp.110-115
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• 2024

본 논문은 3D NAND Flash memory에서 tapering된 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 V_th(Threshold Voltage) 변화량을 분석했다. Tapering 각도가 0°일 때 O/N/F 구조는 O/N/O 구조보다 저항이 작고 WL(Word-Line) 상부와 WL 하부의 V_th 변화량이 감소한다. Tapering된 3D NAND Flash memory는 WL 상부에서 WL 하부로 내려갈수록 channel 면적이 감소하며 channel 저항이 증가한다. 따라서 tapering 각도가 증가할수록 WL 상부의 V_th가 감소하고 WL 하부의 V_th는 증가한다. Tapering된 O/N/F 구조는 channel 반지름 길이와 비례하는 V_fe로 인해 WL 상부의 V_th는 O/N/O 구조보다 더 감소한다. 또한 O/N/F 구조의 WL 하부는 O/N/O 구조보다 V_th가 증가하기 때문에 tapering 각도에 따른 V_th 변화량이 O/N/O 구조보다 더 증가한다.

• Kyungpook Mathematical Journal
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• 제63권2호
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• pp.287-311
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• 2023

In this paper, we introduce the notion of cyclic structure Jacobi semi-symmetric real hypersurfaces in the complex hyperbolic quadric Q^m* = SO⁰_2,m/SO₂SO_m. We give a classifiction of when real hypersurfaces in the complex hyperbolic quadric Q^m* having 𝔄-principal or 𝔄-isotropic unit normal vector fields have cyclic structure Jacobi semi-symmetric tensor.

• 분석과학
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• 제20권5호
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• pp.448-451
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• 2007

A new bis(dicyclohexylammonium) chromate dihydrate complex, $[(C_6H_{11})_2NH_2]_2[CrO_4]{\cdot}2H_2O$, (I), has been synthesized and its structure analyzed by FT-IR, EDS, elemental analysis, ICP-AES, and single crystal X-ray diffraction methods. The Cr(VI) complex (I) is tetragonal system, I${\bar{4}}$2d space group with a = 12.5196(1), b = 12.5196(1), c = $17.3796(3){\AA}$, a = ${\beta}$ = ${\gamma}$ = $90^{\circ}$, V = $2724.09(6){\AA}^3$, Z = 4. The crystal structure of complex (I) consists of tetrahedral chromate $[CrO_4]^{2-}$ anion, two organic dicyclohexylammonium $[(C_6H_{11})_2NH_2]^+$ cations and two lattice water molecules. The chromate anion and protonated dicyclohexylammonium cation is mainly constructed through the ionic bond. The cyclohexylammonium rings of the dicyclohexylammonium cation take the chair form and vertical configuration with each other. The N-H${\cdot}$O and O-H${\cdot}$O hydrogen bond networks between the $N_{dicyclohexylammonium}$, $O_{water}$ and $O_{chromate}$ atom lead to self-assembled molecular conformation and stabilize the crystal structure.

• 한국세라믹학회지
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• 제42권9호
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1745-1747
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• 2011

• Bulletin of the Korean Chemical Society
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• 제29권11호
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• pp.2299-2302
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• 2008

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1416-1418
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• 2007

• 열처리공학회지
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• 제4권2호
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• pp.47-53
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• 1991

Recrystallization behaviors of ordered and disordered structures in $Ll_2$ type $Ni_3Fe$ alloy were studied through hardness measurement and differential thermal analysis. When the disordered structure was isothermally aged at $480^{\circ}C$ below order-disorder transition temperature, the hardness of the structure was increased due to progressive ordering with increasing aging time. The hardness of the disordered structure was increased rapidly with increasing deformation degree up to 10%, and then gradually increased with further deformation degree. while the hardness of the ordered structure was increased rapidly with increasing deformation degree up to 10%, showing a constant hardness value up to 50% and gradually decreased with further deformation degree. The hardness of the ordered structure was higher than that of the disordered structure at all same deformation degrees. The recrystallization temperature of the ordered and disordered structures were decreased with increasing deformation degree. At the same deformation degrees, the recrystallization temperature of the ordered structure was lower than that of the desordered structure.