• Korean Journal of Materials Research
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• v.33 no.4
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• pp.135-141
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• 2023

The volatilization of alkali ions in (K,Na)NbO₃ (KNN) ceramics was inhibited by doping them with alkaline earth metal ions. In addition, the grain growth behavior changed significantly as the sintering duration (t_s) increased. At 1,100 ℃, the volatilization of alkali ions in KNN ceramics was more suppressed when doped with alkaline earth metal ions with smaller ionic size. A Ca²⁺-doped KNN specimen with the least alkali ion volatilization exhibited a microstructure in which grain growth was completely suppressed, even under long-term sintering for t_s = 30 h. The grain growth in Sr²⁺-doped and Ba²⁺-doped KNN specimens was suppressed until t_s = 10 h. However, at t_s = 30 h, a heterogeneous microstructure with abnormal grains and small-sized matrix grains was observed. The size and number of abnormal grains and size distribution of matrix grains were considerably different between the Sr²⁺-doped and Ba²⁺-doped specimens. This microstructural diversity in KNN ceramics could be explained in terms of the crystal growth driving force required for two-dimensional nucleation, which was directly related to the number of vacancies in the material.

• Journal of Powder Materials
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• v.10 no.1
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• pp.57-62
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• 2003

The effect of bedding on the microstructure of $Si_3N_4$ added with ultra-fine SiC was investigated. The bedding and the addition of ultra-fine SiC effectively inhibited grain growth of $Si_3N_4$ matrix grain. The microstructures of the specimens sintered with bedding powder consisted of fine-grains as compared with the specimens sintered without bedding powder. In addition, the grain size and the difference of grain size between the specimens sintered with bedding and without bedding was reduced with increasing SiC content. Some ultra-fine SiC particles were trapped in the $Si_3N_4$ grains growed. The number of SiC particles trapped in the $Si_3N_4$ grains increased with increasing the grain growth. When ultra-fine SiC particles were added in the $Si_3N_4$ ceramics, the strength was improved but the toughness was decreased, which was considered to be resulted from the decrease of the grain size.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.829-834
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• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.91-96
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• 2021

The enhancement of thermoelectric figure of merit was achieved by the simple processes of sieving and high energy ball milling, respectively, which are enable to reduce the grain size of n-type Bi₂Te₃ thermoelectric materials. By optimizing the grain size, the electrical conductivities and thermal conductivities were controlled. In this study, spark plasma sintering was employed for hindering the grain growth during the sintering process. The thermoelectric figure of merit was measured to be 0.78 in the samples with 30 min high energy ball milling process. Notably, this value was 40 % higher than that of pristine Bi₂Te₃ sample. This result shows the properties of thermoelectric materials can be readily controlled by optimization of grain size via simple ball milling process.

• Korean Journal of Materials Research
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• v.31 no.7
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• pp.397-402
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• 2021

In this study, binderless-WC, WC-6 wt%Co, WC-6wt% 1 and 2.5 B₄C materials are fabricated by spark plasma sintering process (SPS process). Each fabricated WC material is almost completely dense, with a relative density up to 99.5 % after the simultaneous application of pressure of 60 MPa. The WC added Co and Co-B₄C materials resulted in crystalline growth. The WC with HCP crystal structure has respective interfacial energy (basal facet direction: 1.07 ~ 1.34 J·m^-2, prismatic direction: 1.43 ~ 3.02 J·m^-2) that depends on the grain growth direction. It is confirmed that the continuous grain growth, biased by the basal facet, which has relatively low energy, is promoted at the WC/Co interface. As abnormal grain growth takes place, the grain size increases more than twice from 0.37 to 0.8 um. It is found through analysis that the hardness property also greatly decreases from about 2661.4 to 1721.4 kg/mm², along with the grain growth.

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.27-32
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• 2017

The effects of artificial holes on the trapped magnetic fields and magnetic levitation forces of very large single-grain $Y_{1.5}Ba_2Cu_3O_{7-y}$ (Y1.5) bulk superconductors were studied. Artificial holes were made for Y1.5 powder compacts by die pressing using cylindrical dies with a diameter of 30 mm or 40 m, or rectangular dies with a side length of 50 mm. The single grain Y1.5 bulk superconductors (25 mm, 33 mm in diameter and 42 mm in side length) with artificial holes were fabricated using a top-seeded melt growth (TSMG) process for the die-pressed Y1.5 powder compacts. The magnetic levitation forces at 77 K of the 25 mm single grain Y1.5 samples with one (diameters of 4.2 mm) or six artificial holes (diameters of 2.5 mm) were 10-17% higher than that of the Y1.5 sample without artificial holes. The trapped magnetic fields at 77 K of the Y1.5 samples with artificial holes were also 9.6-18% higher than that of the Y1.5 sample without artificial holes. The 33 mm and 42 mm single grain Y1.5 samples with artificial holes (2.5 mm and 4.2 mm in diameter) also showed trapped magnetic fields 10-13% higher than that of the Y1.5 samples without artificial holes in spite of the reduced superconducting volume fraction due to the presence of artificial holes. The property enhancement in the large single grain Y1.5 bulk superconductors appears to be attributed to the formation of the pore-free regions near the artificial holes and the homogeneous oxygen distribution in the large Y123 grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.738-748
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• 2008

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.343-349
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• 2020

NKN [(Na,K)NbO₃] is a candidate lead-free piezoelectric material to replace PZT [Pb(Zr,Ti)O₃]. A single crystal has excellent piezoelectric-properties and its properties are dependent of the crystal orientation direction. However, it is hard to fabricate a single crystal with stoichiometrically stable composition due to volatilization of sodium during the growth process. To solve this problem, a solid solution composition is designed (Na,K)NbO₃-Ba(Cu,Nb)O₃ and solid state grain growth is studied for a sizable single crystal. Ceramic powders of (Na,K)NbO₃-M(Cu,Nb)O₃ (M = Ca, Sr, Ba) are synthesized and grain growth behavior is investigated for different temperatures and times. Average normal grain sizes of individual specimens, which are heat-treated at 1,125 ℃ for 10 h, are 6.9, 2.8, and 1.6 ㎛ for M = Ca, Sr, and Ba, respectively. Depending on M, the distortion of NKN structure can be altered. XRD results show that (NKN-CaCuN: shrunken orthorhombic; NKN-SrCuN: orthorhombic; NKN-BaCuN: cubic). For the sample heat-treated at 1,125 ℃ for 10 h, the maximum grain sizes of individual specimens are measured as 40, 5, and 4,000 ㎛ for M = Ca, Sr, and Ba, respectively. This abnormal grain size is related to the partial melting temperature (NKN-CaCuN: 960 ℃; NKN-SrCuN: 971 ℃; NKN-BaCuN: 945 ℃).