• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.1
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• pp.85-90
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• 2008

In this paper, we studied on dual reflector adjusted to monopulse antenna system. As a result, when the efficiency of main reflector is more than 70%, The size of reflector is 30 wavelength of maximum frequency and minimum frequency gain is 37.9dBi, and Maximum frequency gain is 38.6dBi. Also, when a radius is D and Focus-distance is $F_e$, a scheme for efficiency improvement of Sub Reflector is to increase the Focus-distance to Diameter Ratio. In this case, Cross polarization in Far field improved and spherical spreading loss in circumference of reflector reduced. The influence of Radiation pattern followed by the side displacement of feed antenna(at $x_sy_s$) is decreased, it is confirmed that performance of scanning is improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.428-432
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• 2015

Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.26-31
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• 2012

We have proposed a metamaterial lens that enables sub-wavelength focusing, which is shorter than an operating wavelength. Our lens is a two dimensional array of a unit cell consisting of a metallic dual-plate printed on a dielectric substrate. The unique dual-plate structure provides negativeness both in permittivity and permeability, with no help from conventional additional structures, which are normally printed on the opposite of metallic patterns. Therefore, we can focus a source (or an image) in a tiny distance shorter than the free space wavelength (${\lambda}$) at the frequencies of interest. Furthermore, since the proposed geometry does not need separate supplementary structures to acquire negative permittivity or permeability, our lens is much simpler than conventional metamaterial lenses, which is a strong point in practical applications. We have validated sub-wavelength focusing ability in a 6 GHz frequency band through an experiment of near field scanning, which provided the width of about 0.19 ${\lambda}$ at a half maximum of a peak value of an measured image. The width of the focused image through the lens is more than 4 times shorter than that without the lens, which confirms the validity of our design approach.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• Journal of Broadcast Engineering
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• v.19 no.6
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• pp.934-941
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• 2014

In this paper, we present a low profile 2-layered meander built-in monopole antenna for portable RFID reader using FDTD(Finite Difference Time Domain) method. The input impedance, return loss, and VSWR in the frequency domain are calculated by Fourier transforming the time domain results. The double meander 2-layer structure is used to enhance the impedance matching and increase the antenna gain. The measured bandwidth of the antenna is 0.895 GHz ~ 0.930 GHz for a S11 of less than -10dB. The measured peak gain of proposed low profile RFID built-in antenna is 2.3 dBi. And the proposed built-in antenna for portable RFID reader can offers relatively wide-bandwidth and high-gain characteristics, in respectively. Experimental data for the return loss and the gain of the antenna are also presented, and they are relatively in good agreement with the FDTD results. This antenna can be also applied to mobile communication field, energy fields, RFID, and home-network operations, broadcasting, and other low profile mobile systems.

• Journal of The Korean Astronomical Society
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• v.48 no.5
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• pp.313-323
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• 2015

Active galactic nuclei (AGN) are known for irregular variability on all time scales, down to intra-day variability with relative variations of a few percent within minutes to hours. On such short timescales, unexplored territory, such as the possible existence of a shortest characteristic time scale of activity and the shape of the high frequency end of AGN power spectra, still exists. We present the results of AGN single-dish fast photometry performed with the Korean VLBI Network (KVN). Observations were done in a “anti-correlated” mode using two antennas, with always at least one antenna pointing at the target. This results in an effective time resolution of less than three minutes. We used all four KVN frequencies, 22, 43, 86, and 129 GHz, in order to trace spectral variability, if any. We were able to derive high-quality light curves for 3C 111, 3C 454.3, and BL Lacertae at 22 and 43 GHz, and for 3C 279 at 86 GHz, between May 2012 and April 2013. We performed a detailed statistical analysis in order to assess the levels of variability and the corresponding upper limits. We found upper limits on flux variability ranging from ~1.6% to ~7.6%. The upper limits on the derived brightness temperatures exceed the inverse Compton limit by three to six orders of magnitude. From our results, plus comparison with data obtained by the University of Michigan Radio Astronomy Observatory, we conclude that we have not detected source-intrinsic variability which would have to occur at sub-per cent levels.

• Journal of the Korean Ceramic Society
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• v.52 no.3
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• pp.215-220
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• 2015

Phase evolution, microstructure, and microwave dielectric properties of $Li_2O$ and $Al_2O_3$ doped $Zn_{1.9}Si_{1.05}O_4$, i.e., $Zn_{1.9-2x}Li_xAl_x-Si_{1.05}O_4$, ceramics (x = 0.02 ~ 0.10) were investigated. The ceramics were densified by $SiO_2$-rich liquid phase composed of the Li-Al-Si-O system, indicating that doped Li and Al contributed to the formation of the liquid. As the secondary phase, ${\beta}$-spodumene solid solution with the composition of $LiAlSi_3O_8$ was precipitated from the liquid during the cooling process. The dense ceramics were obtained for the specimens of $$x{\geq_-}0.06$$ showing the rapid densification above $1000^{\circ}C$, implying that a certain amount of liquid is necessary to densify. The specimen of x = 0.06 sintered at $1050^{\circ}C$ exhibited good microwave dielectric properties; the dielectric constant and the quality factor ($Q{\times}f_0$) were 6.4 and 11,213 GHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.429-434
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• 2016

This paper deals with the characteristics of partial discharge (PD) for the purpose of a condition based maintenance (CBM) of gas insulated switchgears (GIS) in power equipment. Four types of electrode systems such as a protrusion on enclosure (POE), a particle on spacer (POS), a free particle (FP) and a Floating were designed and fabricated. PD pulses were measured using UHF sensor with a frequency range of 300 MHz~1.4 GHz and a DAQ with a sampling rate of 250 MS/s. Discharge inception voltage (DIV), discharge extinction voltage (DEV), and phase resolved partial discharge (PRPD) were analyzed depending on electrode systems. The average DIV in the POS was 28.8 kV. It was about 1.7 times higher than that in the FP, which was the lowest value of 17.2 kV. The FP shuffled and jumped at the applied voltage of 23.5 kV. Over 95% of PD pulses in the POE were generated in the negative polarity ($181^{\circ}{\sim}360^{\circ}$) of applied voltage. The results showed the phase (${\Phi}$)-magnitude (dBm) of PD pulses by UHF sensor, a cluster was formed separately depending on electrode systems.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.208-213
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• 2011

We calculated the EPR (electron paramagnetic resonance) line-shape function. The line-widths of a -doped single crystal was studied as a function of the temperature with 0.5 and 2 at. at a frequency of (X-band). The line-width decreases with increasing temperature, such temperature behavior of the line-width can indicate a motional narrowing of the spectrum, when impurity ions substitute for host ions in an off-center position, and thus there can be fast jumping of dipoles between several symmetrically equivalent configurations. Therefore, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition problems.