• 전자공학회논문지A
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• 제28A권12호
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• pp.53-58
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• 1991

Hot-carrier induced degradation has been studied for the BF$_2$ ion-implanted surface-channel LDD(P$^{+}$ polysilicon gate) PMOSFET in comparison to the buried-channel structure(N$^{+}$ polysilicon gate) PMOSFET. The conditions for maximum degradation better correlated to I$_{g}$ than I$_{sub}$ for both PMOSFET's. Due to the use of LDD structure on SC-PMOSFET, the substrate current for SC-PMOSFET was shown to be smaller than that of BC-PMOSFET. The gate current was smaller as well, due to the gate material work-function difference between p$^{+}$ and n$^{+}$ polysilicon gates. From the results, it was shown that the surface-channel LDD PMOSFET is more resistant to short channel effect than the buried-channel PMOSFET.

• 전기학회논문지
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• 제62권12호
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• pp.1764-1770
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• 2013

Use of the 5.1 channel audio signals suitable for the television system is improper for the radio broadcasting system, which uses the stereo audio system. Therefore, it is necessary to develop an audio down-mixer to convert 5.1 multi-channel audio signals to stereo signals for radio broadcasting. In this paper, a development of an audio down-mixer was carried out to convert 5.1 multi-channel audio signals to stereo signals. The down-mixer which was developed can use the audio signals separated from video signals, including sound signals or individual signals provided from 3-channel AES/EBU signals including Left(L), Right(R), Left Surround(Ls), Right Surround(Rs), Center(C) and Low Frequency Effect(Lfe) sounds as mixer inputs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1189-1192
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• 2009

Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.52-55
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• 2004

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1903-1905
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• 2013

• ETRI Journal
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• 제44권1호
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• pp.117-124
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• 2022

In this paper, the performance of precoding-aided differential spatial modulation (PDSM) systems with optimal transmit antenna subset (TAS) selection is examined analytically. The average bit error rate (ABER) performance of the optimal TAS selection-based PDSM systems using a zero-forcing (ZF) precoder is evaluated using theoretical upper bound and Monte Carlo simulations. Simulation results validate the analysis and demonstrate a performance penalty < 2.6 dB compared with precoding-aided spatial modulation (PSM) with optimal TAS selection. The performance analysis reveals a transmit diversity gain of (N_T-N_R+1) for the ZF-based PDSM (ZF-PDSM) systems that employ TAS selection with N_T transmit antennas, N_S selected transmit antennas, and N_R receive antennas. It is also shown that reducing the number of activated transmit antennas via optimal TAS selection in the ZF-PDSM systems degrades ABER performance. In addition, the impacts of channel estimation errors on the performance of the ZF-PDSM system with TAS selection are evaluated, and the performance of this system is compared with that of ZF-based PSM with TAS selection.

• Journal of information and communication convergence engineering
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• 제14권1호
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• pp.40-44
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• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.

• 대한기계학회논문집B
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• 제25권9호
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• pp.1209-1218
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• 2001

The present paper proposes a new correlation for the flow boiling heat transfer coefficients in the low flow rate condition (Re(sub)LF$\leq$200) within horizontal rectangular channels with small gaps (heights). The gap between the upper and the lower plates of each channel ranges from 0.4 to 2mm while the channel width being fixed to 20mm. Refrigerant 113 was used as the test fluid. The mass flux ranges from 50 to 200kg/㎡s and the channel walls were uniformly heated with the heat flux range of 3-15kW/㎡. The quality range covers from 0.19 to 0.76 and the flow pattern is considered to be annular. The measured heat transfer coefficients increase with the mass flux and the local quality; however the effect of the heat flux appears to be minor. At the low mass flux condition, which is more likely with the smaller gap size, the heat transfer is primarily controlled by the liquid film thickness. The proposed F factor for the heat transfer coefficient in the range of Re(sub)LF$\leq$200 well represents the experimental data within the deviation of $\pm$20%. The Kandlikars flow boiling correlation covers the higher flow-rate range(Re(sub)LF>200) within the deviation of $\pm$20%.

• International Journal of Computer Science & Network Security
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• 제23권6호
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• pp.27-34
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• 2023

This paper proposed an Inter-Carrier-Interference (ICI) Canceling Orthogonal Frequency Division Multiplexing (OFDM) receiver for 5G mobile system to support 500 km/h linear motor high speed terrestrial transportation service. A receiver in such high-speed train sees the transmission channel which is composed of multiple Doppler-shifted propagation paths. Then, a loss of sub-carrier orthogonality due to Doppler-spread channels causes ICI. The ICI Canceler is realized by the following three steps. First, using the Demodulation Reference Symbol (DMRS) pilot signals, it analyzes three parameters such as attenuation, relative delay, and Doppler-shift of each multi-path component. Secondly, based on the sets of three parameters, Channel Transfer Function (CTF) of sender sub-carrier number 𝒏 to receiver sub-carrier number 𝒍 is generated. In case of 𝒏≠𝒍, the CTF corresponds to ICI factor. Thirdly, since ICI factor is obtained, by applying ICI reverse operation by Multi-Tap Equalizer, ICI canceling can be realized. ICI canceling performance has been simulated assuming severe channel condition such as 500 km/h, 2 path reverse Doppler Shift for QPSK, 16QAM, 64QAM and 256QAM modulations. In particular, for modulation schemes below 16QAM, we confirmed that the difference between BER in a 2 path reverse Doppler shift environment and stationary environment at a moving speed of 500 km/h was very small when the number of taps in the multi-tap equalizer was set to 31 taps or more. We also confirmed that the BER performance in high-speed mobile communications for multi-level modulation schemes above 64QAM is dramatically improved by the use of a multi-tap equalizer.

• The Korean Journal of Physiology and Pharmacology
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• 제24권1호
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• pp.111-119
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• 2020

In vascular smooth muscle, K⁺ channels, such as voltage-gated K⁺ channels (Kv), inward-rectifier K⁺ channels (Kir), and big-conductance Ca²⁺-activated K⁺ channels (BK_Ca), establish a hyperpolarized membrane potential and counterbalance the depolarizing vasoactive stimuli. Additionally, Kir mediates endothelium-dependent hyperpolarization and the active hyperemia response in various vessels, including the coronary artery. Pulmonary arterial hypertension (PAH) induces right ventricular hypertrophy (RVH), thereby elevating the risk of ischemia and right heart failure. Here, using the whole-cell patch-clamp technique, we compared Kv and Kir current densities (I_Kv and I_Kir) in the left (LCSMCs), right (RCSMCs), and septal branches of coronary smooth muscle cells (SCSMCs) from control and monocrotaline (MCT)-induced PAH rats exhibiting RVH. In control rats, (1) I_Kv was larger in RCSMCs than that in SCSMCs and LCSMCs, (2) I_Kv inactivation occurred at more negative voltages in SCSMCs than those in RCSMCs and LCSMCs, (3) I_Kir was smaller in SCSMCs than that in RCSMCs and LCSMCs, and (4) I_BKCa did not differ between branches. Moreover, in PAH rats, I_Kir and I_Kv decreased in SCSMCs, but not in RCSMCs or LCSMCs, and I_BKCa did not change in any of the branches. These results demonstrated that SCSMC-specific decreases in I_Kv and I_Kir occur in an MCT-induced PAH model, thereby offering insights into the potential pathophysiological implications of coronary blood flow regulation in right heart disease. Furthermore, the relatively smaller I_Kir in SCSMCs suggested a less effective vasodilatory response in the septal region to the moderate increase in extracellular K⁺ concentration under increased activity of the myocardium.