• Title/Summary/Keyword: structure packing

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Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System (FTS 장치를 이용한 가스 차단막용 SiOx 및 SiOxNy 박막의 공정특성)

  • Son, Jin-Woon;Park, Yong-Jin;Sohn, Sun-Young;Kim, Hwa-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1028-1032
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    • 2009
  • In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

The Permeation Properties of $O_{2}\;and\;N_{2}$ for BPSf/TMSPSf Blend Membrane (BPSf/TMSSf 블렌드막을 통한 산소와 질소의 투과특성)

  • Kim Hyunjoon;Hong Suk-In
    • Journal of the Korean Institute of Gas
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    • v.5 no.1
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    • pp.29-36
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    • 2001
  • The permeation properties of $O_2\;and\;N_2$ were measured for bromobisphenol A polysulfone(BPSf), bisphenol A trimethylsilylated polysulfone(TMSPSf) and their blend membrane to investigate the structure-properties relationships. BPSf shows relatively high permselectivity. It can be explained that the strong polarity of bromine in BPSf increases chain packing ability. In this case the distance of polymer chains is reduced by increasing of interchain interaction by induced dipole. TMSPSf shows relatively high permeability. The higher value of permeability coefficients for TMSPSf is due to the substitution of very bulky trimethylsilyl groups. The replacement of phenyl hydrogens of bisphenol A polysulfone(PSf) with trimethylsilyl groups results in higher fractional free volume(FFV). In this work, taking into account the complimentary features of BPSf and TMSPSf, BPSf/TMSPSf blend was prepared and the compatibility in mixing are examined. The BPSf/TMSPSf blend shows higher permeability than commercial PSf, with minimum loss of selectivity. The miscibility of the BPSf/TMSPSf blend is confirmed by the single glass transition temperature.

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Fast Hilbert R-tree Bulk-loading Scheme using GPGPU (GPGPU를 이용한 Hilbert R-tree 벌크로딩 고속화 기법)

  • Yang, Sidong;Choi, Wonik
    • Journal of KIISE
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    • v.41 no.10
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    • pp.792-798
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    • 2014
  • In spatial databases, R-tree is one of the most widely used indexing structures and many variants have been proposed for its performance improvement. Among these variants, Hilbert R-tree is a representative method using Hilbert curve to process large amounts of data without high cost split techniques to construct the R-tree. This Hilbert R-tree, however, is hardly applicable to large-scale applications in practice mainly due to high pre-processing costs and slow bulk-load time. To overcome the limitations of Hilbert R-tree, we propose a novel approach for parallelizing Hilbert mapping and thus accelerating bulk-loading of Hilbert R-tree on GPU memory. Hilbert R-tree based on GPU improves bulk-loading performance by applying the inversed-cell method and exploiting parallelism for packing the R-tree structure. Our experimental results show that the proposed scheme is up to 45 times faster compared to the traditional CPU-based bulk-loading schemes.

Preparation of Biodegradable PHBV Devices Containing Gentamicin Sulfate (PHBV를 이용한 황산겐타마이신 서방성 제형의 제조와 방출거동)

  • 최학수;김상욱;윤덕일;강길선;이종문;김용식;이해방
    • Polymer(Korea)
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    • v.25 no.3
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    • pp.334-342
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    • 2001
  • Gentamicin sulfate (GS)-loaded poly(3-hydroxybutyrate-co-3-hydroxyvalerate)(PHBV) devices were prepared for controlled-release of antibiotics. In this study, the effects of thickness, hydroxyvalerate (HV) content, initial drug-loading ratio, and additive content on the release profile have been investigated. The morphology of devices was examined with scanning electron microscope (SEM) before and after in vitro release; their highly porous surface and cross-sectional were observed. It could be suggested that device would be affected by the packing of the HV and additive content, which would depend on their structure. A high performance liquid chromatography (HPLC) was used to detect and quantify the release of GS from the device. The drug release from all the devices showed biphasic release patterns, and some matrices released the incorporated antibiotic throughout 30 days with a near zero-order release rate. The release patterns were shown to be changed by altering the thickness, copolymer ratio, and additive content.

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A Study on the Structure Fabrication of LDD-nMOSFET using Rapid Thermal Annealing Method of PSG Film (PSG막의 급속열처리 방법을 이용한 LDD-nMOSFET의 구조 제작에 관한 연구)

  • 류장렬;홍봉식
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.12
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    • pp.80-90
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    • 1994
  • To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

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MOCVD Deposition of AlN Thin Film for Packaging Materials

  • Chang-Kyu, Ahna;Seung-Chul Choi;Seong-Hoon Cho;Sung-Hwan Han;Je-Hong Kyoung
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.118-118
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    • 2000
  • New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

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The Resistance Characteristics and Reliability Evaluation of an Insulation Ring Type of Corrugated Stainless Steel Tubing(CSST) (절연링형 금속플렉시블호스(CSST)의 저항 특성 및 신뢰성 평가)

  • Lee, Jang-Woo;Kim, Jeom-Sik;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.31 no.6
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    • pp.25-31
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    • 2016
  • This paper has analyzed the structure, applicable regulations and the resistance characteristics of insulation ring type of CSST (Corrugated Stainless Steel Tubing for Gas). With the flammability test conducted in accordance with KS C IEC 60811-1-1, the evaluation of insulation resistance, temperature characteristics, and reliability has been conducted. An insulation ring type CSST consists of protective coating, tube, nut, insulation ring, packing, socket, and ball valve. Connecting an insulation ring type CSST to gas tubings for gas appliance is not permitted, moreover, the product shall be installed inside a sleeve pipe in case of buried installation such as the ceiling. Damages on protective coating and tube were detected when fire was applied to the test sample with a portable torch for 60 seconds. The insulation resistance of a normal product was $49.59M{\Omega}$, while that of the product completed the flammability test reduced to $9.21M{\Omega}$. The mean insulation resistance within the confidence Interval of 95% using the mini tap program 17 was $49.59M{\Omega}$ and the mean insulation resistance within the confidence interval reduced to $9.21M{\Omega}$. In the normal distribution analysis of 95% confidence interval, the value-P of the normal product was stable at 0.075 and AD(Anderson-Darling) statistic value was turned out to be 0.063, which is very normal, and the standard deviation was analyzed as 0.2586. The value P of the product completed the flammability test resulted in 0.005, the AD was 1.355 and the standard deviation reduced to 0.07908.

Influence of Organic Pigment Blending on Surface and Optical Properties of Coated Paper (유기안료 배합이 도공층의 표면 및 광학적 특성에 미치는 영향)

  • Jeong, Kyoung-Mo;Won, Jong-Myoung;Lee, Yong-Kyu
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.44 no.3
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    • pp.1-8
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    • 2012
  • The effects of several factors including organic pigment blending and calending conditions on the surface and optical properties of coated paper were investigated. When clay and calcium carbonate are blended in the ratio of 7 to 3, highest smoothness and relative sediment volume were obtained. When organic pigments were added to the mixture of clay and calcium carbonate, the relative sediment volume did not changed significantly. However, when organic pigments were added to calcium carbonate, sheet gloss and smoothness were improved, and showed the better results than that obtained from the mixture of organic pigment and clay. When organic pigment is blended with clay, the particles of organic pigment are buried in the packing structure of coating layer. However, the particle shape of calcium carbonate is quite different from that of clay, and the aspect ratio of calcium carbonate is similar to that of organic pigment. Thus organic pigment particles are not buried and improved effectively the physical characteristics of coating layer. When the hollow sphere pigment was blended, opacity and sheet gloss were improved significantly. Even though the coating color applied was reduced, the similar level of opacity was maintained. Also, if particle size and void volume are increased, gloss is improved, because coating layer is easily transformed in calendering. Therefore, even though lower pressure was applied during calendering, the smoothness of surface of coating layer was improved, and the decrease of void volume in coating layer was reduced, and the quality of coated sheet can be improved.

A Study on the Fire Characteristics of Palletized Unit-Load Commodities on Racks (랙크 내 파렛트단위 적재물품의 화재특성에 관한 연구)

  • Cho, Gyu-Hwan;Yeo, In-Hwan
    • Fire Science and Engineering
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    • v.30 no.3
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    • pp.23-30
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    • 2016
  • A fire extinguishing system for a rack warehouse was recently designed, which only consider the gross area and number of stories. However, the design of such a system should take into account not only the planar structuree, but also the elevation perspectives due to its vertical structure. Moreover, the fire load of the commodities palletized on the racks should be considered, in order to design a performance-based fire safety system that is appropriate for these environmental conditions. For this reason, this study analyzed the fire characteristics of the commodities palletized on the racks (pallet + the commodities in a box unit + vinyl packing material), taking into consideration the results of a field investigation conducted in Korea, as well as the Hazard Classifications of Commodities used in other countries. Through this analysis, the heat release rate (HRR) and smoke production rate (SPR) were derived.

A Study on the Surface Pre-treatment of Palladium Alloy Hydrogen Membrane (팔라듐 합금 수소 분리막의 전처리에 관한 연구)

  • Park, Dong-Gun;Kim, Hyung-Ju;Kim, Hyo Jin;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.45 no.6
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    • pp.248-256
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    • 2012
  • A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.