• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.461-466
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• 2016

Nanocrystalline vanadium nitride (VN) coatings were deposited using asymmetric bipolar pulsed dc sputtering to further understand the influence of the pulsed plasmas on the crystal structure, microstructure and mechanical properties. Properties of VN coatings were investigated with FE-SEM, XRD and nanoindentation. The results show that, with the increasing pulse frequency and decreasing duty cycle, the coating morphology changed from a porous columnar to a dense structure, with finer grains. Asymmetric bipolar pulsed dc sputtered VN coatings showed higher hardness, elastic modulus and residual compressive stress than dc sputtered VN coatings. The results suggest that asymmetric bipolar pulsed dc sputtering technique is very beneficial for the reactive sputtering deposition of VN coatings.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.23-26
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• 1997

Nanophase titania film was obtained by plasma spraying. The structure of titania film was investigated with transmission electron microscopy (TEM). It was found taht the film was composed of grains with mean particle size of 15nm. The crystal structure of nanophase titania film was found to be anatase phase by electron diffraction.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.141-147
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• 1999

The electrochromic characteristics of tungsten oxide films are largely affected by deposition conditions, such as substrate temperature and gas flow rate and also post-annealing. We have considered gas flow rate and temperature as important factors having an effect on an electrical, optical phenomenon and structural variation of $WO_3$ . The tungsten oxide films were deposited onto ITO(20$\Omega\box$, 1000$\AA$) using rf magnetron sputtering method. In particular, the films deposited at room temperature were annealed at various temperatures in air. All specimens had crystal structure except one being deposited at room temperature with nearly amorphous-like structure. The specimen deposited at $100^{\circ}C$ had a structure in which the increase in deposition temperature. The specimen deposited at $100^{\circ}C$ had a structure in which the cations$(Li^+)$ are easily movable because of void boundaries induced by regularly arrayed large grains. The specimen deposited at $300^{\circ}C$ had a dense structure with small grains but it exhibited the large mobility and charge density in $WO_3$ because of distinct grain boundaries.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.113-118
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• 1999

Aluminum hydrates were synthesized using $AlCl_3$.$6H_2O$as starting material by precipitation method. The phases of obtained powder were amorphous, boehmite, bayerite, nordstrandite depending on the pH of solutions. Aluminum hydrates transformed to $\alpha-Al_2O_3$via $\gamma$- $Al_2O_3$,$\delta$- $Al_2O_3$,and $\theta$-$Al_2O_3$,and particle sizes were grown by increment of heating temperature. The TEX>$\gamma$- $Al_2O_3$ powder was coated on intermediate layer of ceramic membrane by the dip-coating method, and unsupported membrane was also prepared for comparison. The supported layer showed porous structure with small grains, but the unsupported layer revealed interconnected larger grains. Grain growth is dominant in the unsupported layer than in the supported one.

• Transactions of Materials Processing
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• v.29 no.3
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• pp.127-134
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• 2020

It is known that the difference of texture of the polycrystalline Al sheet is not a critical parameter for the formation of aligned nanopore arrays in anodic aluminum oxide (AAO). This will be related to the polycrystalline grain in the Al sheet. The texture of each grain in the polycrystalline Al sheet is different. The mixed textures of grains have the mixing effects on the nanopore structure of the AAO. Thus, the effect of Al texture on the nanopore structure of the AAO was investigated using three types of Al single crystals with (111), (200) and (220) textures in this paper. These three types of AAO layers were fabricated by the two-step anodizing method at 40 V and temperature of 0-5℃ in oxalic acid solution. In the nanopores formed on the AAO, the average area of one nanopore and the average roundness of one nanopore were measured were measured based on the SEM images. In the hexagon obtained by connecting nanopores on the AAO, the average standard deviation of one angle deviated from 120° was measured. In the AAO nanopores with texture of (111), (200) and (220) single crystal samples, the average area of one nanopore of (200) single crystal sample was the widest, followed by (111), (220) single crystals. The average circularity of one nanopore of (200) single crystal sample was the best, followed by (111), (220) single crystals. The average standard deviation of an angle from 120° of (220) single crystal sample was the largest, followed by (111) and (200) single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.136-142
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• 2022

The crystal structure, grain growth behavior, and dielectric properties of BaTiO₃ have been studied with the addition of Dy₂O₃. The powders were synthesized at ratios of (100-x)BaTiO₃-xDy₂O₃ (mol%, x = 0, 0.5, 1.0, 2.0) by a conventional solid-state synthesis, and the powder compacts were sintered at 1250℃ for 2 hours in air. As the amount of added Dy₂O₃ was increased, the crystal structure of the sintered samples changed from a tetragonal to a pseudo-cubic structure, and the tetragonality decreased. In addition, a secondary phase of Ba₁₂Dy_4.67Ti₈O₃₅ appeared when Dy₂O₃ was added. The average grain size after sintering decreased and abnormal grains appeared as the amount of Dy₂O₃ increased. It can be explained that the grain growth behavior of the Dy₂O₃ added-BaTiO₃ occurs due to the two-dimensional nucleation and growth, and is governed by the interface reaction. Further, the correlation between crystal structure, microstructure, and dielectric properties was discussed.

• Journal of Information Display
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• v.11 no.1
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.110-116
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• 2020

Grains in the BaTiO₃, which is used for a dielectric layer in MLCC(Multi-Layer Ceramic Capacitor) are necessary to form core/shell structure for a stable TCC(Temperature Coefficient of Capacitance) behavior. The shell property has been deduced from the whole TCC behavior of core/shell structure due to its tiny size, ~ few ㎛. This study demonstrates the individual TCC behavior of the shell phase measured by micro-contact measurement in a temperature range between 35 and 135℃. Pt electrode pairs deposited on an enlarged core/shell structure in a diffusion couple sample made the measurement possible. As a result, the DPT (Diffusion Phase Transition) behavior of the shell phase was revealed as a different TCC behavior from that of the core: a broad peak with T_m at 65℃. This would be also useful experimental data for a modelling that depicts dielectric-temperature behavior of core/shell structure.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.276-281
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• 2000

Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

• Nuclear Engineering and Technology
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• v.41 no.2
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• pp.149-154
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• 2009

The microstructure, the corrosion behavior and the oxide properties were examined for Zr-1.5Nb-0.4Sn-0.2Fe-0.1Cr (HANA-4) alloys which were subjected to two different final annealing temperatures: $470^{\circ}C$ and $570^{\circ}C$. HANA-4 was shown to have $\ss$-enriched phase with a bcc crystal structure and Zr(Nb,Fe,Cr)$_2$ with a hcp crystal structure with $\ss$-enriched phase being more frequently observed compared with Zr(Nb,Fe,Cr)$_2$. The corrosion rate of HANA-4 was increased with an increase of the final annealing temperature in the PWR-simulating loop, $360^{\circ}C$ pure water and $400^{\circ}C$ steam conditions, which was correlated well with a reduction in the size of the columnar grains in the oxide/metal interface region. The oxide growth rate of HANA-4 was considerably affected by the alloy microstructure determined by the final annealing temperature.