• Title/Summary/Keyword: stripe width

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A Study on the Analysis of Gain/Refractive index Guiding of DH LD (DH LD의 Gain/Refractive Index Guiding해석에 관한 연구)

  • 김은수;박한규
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.7 no.3
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    • pp.120-124
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    • 1982
  • In this paper, the theoretical analysis of lateral guiding in stripe geometry DH Laser Diode is performed. In the analysis, the gain & refractive index variations in active layer are modeled by very analogous methmatical function to their real profile and the two dimensional lateral waveguiding of DH LD have been analyzed by perturbation theory. Finally, the beam width dependence of refractive index variation(n), active layer width(d), and cavity length(L), have been analyzed.

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Preference for Color and Fabric Motifs in Men's Clothing Design - In the area of men by age, physical type and job - (추동용 정장양복과 콤비양복의 색채 및 직물무늬에 관한 연구 - 성인남성의 연령별, 신체적 조건 및 직업에 따른 선호를 중심으로 -)

  • 조진숙
    • Journal of the Korean Home Economics Association
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    • v.31 no.1
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    • pp.193-210
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    • 1993
  • The purpose of this study was to investigate the effect of age, physical type and job on preference for color and fabric motifs in men's clothing design. Color preference measures consisted of clothing styles painted in CAD. Preference for fabric motifs was assesed by stripe fabrics in size, width and strength. All of the preference measures were devised specifically for this study. Furthermore, items on Hight and Weight for physical type, age and job of subjects were included I the questionnaire. Data were obtained by self-administered questionnaires form 243 men (25-54 years old) in Seoul. Analysis was by chi-square (X2), frequency, and percentage. The results obtained in this study were as follows : 1. Color preference was not affected by age and physical type, Job was related to coordinate color of men's clothing. 2. Preference for width of striped motifs was affected by age and job. 3. Preference for strength of fabric motifs in men's jacket was affected by physical type.

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Analysis of Film Growth in InGaN/GaN Quantum Wells Selective Area Metalorganic Vapor Phase Epitaxy including Surface Diffusion (InGaN/GaN 양자우물의 SA-MOVPE에서 표면확산을 고려한 박막성장 해석)

  • Im, Ik-Tae;Youn, Suk-Bum
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.3
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    • pp.29-33
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    • 2011
  • Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.

The Welding Process Control Using Neural Network Algorithm (Neural Network 알고리즘을 이용한 용접공정제어)

  • Cho Man Ho;Yang Sang Min
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.12
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    • pp.84-91
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    • 2004
  • A CCD camera with a laser stripe was applied to realize the automatic weld seam tracking in GMAW. It takes relatively long time to process image on-line control using the basic Hough transformation, but it has a tendency of robustness over the noises such as spatter and arc tight. For this reason, it was complemented with adaptive Hough transformation to have an on-line processing ability for scanning specific weld points. The adaptive Hough transformation was used to extract laser stripes and to obtain specific weld points. The 3-dimensional information obtained from the vision system made it possible to generate the weld torch path and to obtain the information such as width and depth of weld line. In this study, a neural network based on the generalized delta rule algorithm was adapted for the process control of GMA, such as welding speed, arc voltage and wire feeding speed.

Simulation for the analysis of distortion and electrical characteristics of a two-dimensional BJT (2차원 BJT의 전기적 특성 및 왜곡 해석 시뮬레이션)

  • 이종화;신윤권
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.4
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    • pp.84-92
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    • 1998
  • A program was developed to analyze the electrical characteristics and harmonic distrotion in a two-dimensional silicon BJT. The finite difference equations of the small signal and its second and thired harmonics for basic semiconductor equations are formulated treating the nonlinearity and time dependence with Volterra series and Taylor series. The soluations for three sets of simultaneous equations were obtained sequantially by a decoupled iteration method and each set was solved by a modified Stone's algorithm. Distortion magins and ac parameters such as input impedance and current gains are calculated with frequency and load resistance as parameters. The distortion margin vs. load resistancecurves show cancellation minima when the pahse of output voltage shifts. It is shown that the distortionof small signal characteristics can be reduced by reducing the base width, increasing the emitter stripe length and reducing the collector epitaxial layer doping concentration in the silicon BJT structure. The simulation program called TRADAP can be used for the design and optimization of transistors and circuits as well as for the calculation of small signal and distortion solutions.

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Mode Locking of AlGaAs Semicondctor Laser Traveling Wave Amplifiers (AlGaAs 진행파 반도체 레이저 광증폭기의 모드록킹)

  • 이창희;강승구;정기웅;임시종;유태경
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.119-128
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    • 1995
  • We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

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Design and Fabrication of Laser Diode Integrated with Peltier Cooler (열전 냉각기가 집적된 레이저 다이오드)

  • 이상일;박정호
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.159-165
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    • 1995
  • A double-heterostructure mesa-stripe-geometry laser diode integrated with thermoelectric Peltier cooler has been designed and fabricated. Epi-layers have been grown by metal organic chemical vapor deposition(MOCVD) method. Peltier cooling effect has been measured for devices with a mesa width of 14$\mu$m and a cavity length of 380$\mu$m. The effects of thermoelectric cooling could be shown by measuring the optical output of the laser with the increase of the current in the thermoelectric cooler. While the input courrent of the laser was maintained at 250mA, the optical output was decreased from 4.8mW to 3.8mW due to heating, but with the thermoelectric cooler on the optical output power was recovered by more than 40%. The results show that the complicated cooling device is not needed since the cooling can be achevied by the developement of the fabrication processing.

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Fabrication and Characteristics of GaAs/AlGaAs GRIN-SCH Quantum Well Laser Diode by MOCVD (MOCVD를 이용한 GaAs/AlGaAs GRIN-SCH 양자 우물 레이저의 제작 및 특성)

  • 손정환
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.06a
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    • pp.139-143
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    • 1991
  • GRIN-SCH quantum well structured Laser Diode were fabricated using MOCVD and operated as CW at room temperature. The threshold current density of the LD with 670${\mu}{\textrm}{m}$ cavity length was 530 A/$\textrm{cm}^2$. For the ridge waveguide type index guiding structured LD with 6${\mu}{\textrm}{m}$ stripe width and 240${\mu}{\textrm}{m}$ cavity length, the threshold current was 50㎃. The maximum differential quantum efficiency was 0.95W/A when the optical output was 60mW. The lasing wavelength of QW LD was 865nm. In the L-I measurement. TE mode was superior to TM mode. From the near field pattern, single lateral mode operation was observed.

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A Study on Weld Line Detection and Wire Feeding Rate Control in GMAW with Vision Sensor (GMAW에서 시각센서를 이용한 용접선 정보의 추출과 와이어 승급속도의 제어에 관한 연구)

  • 조택동;김옥현;양상민;조만호
    • Journal of Welding and Joining
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    • v.19 no.6
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    • pp.600-607
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    • 2001
  • A CCD camera with a laser stripe was applied to realize the automatic weld seam tracking in GMAW. It takes relatively long time to process image on-line control using the basic Hough transformation, but it has a tendency of robustness over the noises such as spatter and arc light. For this reason. it was complemented with adaptive Hough transformation to have an on-line processing ability for scanning specific weld points. The adaptive Hough transformation was used to extract laser stripes and to obtain specific weld points. The 3-dimensional information obtained from the vision system made it possible to generate the weld torch path and to obtain the information such as width and depth of weld line. We controled the wire feeding rate using informations of weld line.

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An analysis of the lateral first-order mode characteristics for the semiconductor laser diodes (반도체 레이저 다이오드의 횡방향 1차모드의 특성 해석)

  • 김형래;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.91-100
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    • 1995
  • This paper represents the lateral first-order mode characteristics for the semiconductor laser diodes using a two-dimensional numerical simulator. In order to analyze the lateral first-order mode characteristics, Helmholtz wave equation is solved twice for the lateral fundamental and the first-order mode considering the mode gain, total losses, and the recombination rate due to the stimulated emission radiation for the each mode independantly. Through this procedure, we find that the lateral first-order mode was easily guided as increasing the stripe width for the index-guiding structures, and that the lateral first-order mode seems to be dominated in the distribution of total light intensity when its output power reaches nearly half of that of the lateral fundamental mode. This results may be used to design the device structure which guides only the lateral fundamental mode.

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