• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.317-322
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• 2015

The metal oxide varistor (MOV) is a major component of the surge protection devices (SPDs) currently in use. The device is judged to be faulty when fatigue caused by the continuous inflow of lightning accumulates and reaches the damage limit. In many cases, induced lightning resulting from lightning strikes flows in to the device several times per second in succession. Therefore, the frequency or the rate at which the SPD is actually exposed to stress, called a surge, is outside the range of human perception. For this reason, the protective device should be replaced if it actually approaches the end of its life even though it is not faulty at present, currently no basis exists for making the judgment of remaining lifetime. Up to now, the life of an MOV has been predicted solely based on the number of inflow surges, irrespective of the magnitude of the surge current or the amount of energy that has flowed through the device. In this study, nonlinear data that shows the damage to an MOV depending on the count of surge and the amount of input current were collected through a high-voltage test. Then, a failure prediction algorithm was proposed by preparing a look-up table using the results of the test. The proposed method was experimentally verified using an impulse surge generator

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.163-163
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• 2015

The effect of nematic liquid crystal(5CB-4-Cyano-4'-pentylbiphenyl) on the amorphous indium gallium zinc oxide thin film transistors(a-IGZO TFTs) was investigated. Through dropping the 5CB on the a-IGZO TFT's channel layer which is deposited by RF-magnetron sputtering, properties of a-IGZO TFTs was dramatically improved. When drain bias was induced, 5CB molecules were oriented by Freedericksz transition generating positive charges to one side of dipoles. From increment of the capacitance by orientation of liquid crystals, the drain current was increased, and we analyzed these phenomena mathematically by using MOSFET model. Transfer characteristic showed improvement such as decreasing of subthreshold slope(SS) value 0.4 to 0.2 and 0.45 to 0.25 at linear region and saturation region, respectively. Furthermore, in positive bias system(PBS), prevention effect for electron trapping by 5CB liquid crystal dipoles was observed, which showing decrease of threshold voltage shift [(${\delta}V$]_TH) when induced +20V for 1~1000sec at the gate electrode.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.903-908
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• 2001

A web-based client/server program, MOVIDIK(Motor-Operated-Valve Integrated Database Information of KEPCO) has been developed to perform a design basis safety evaluation for a motor-operated-valve(MOV) in the nuclear power plant. The MOVIDIK consists of seven analysis modules and one administrative module. The analysis module calculates a differential pressure on the valve disk, thrust/torque acting at a valve stem, maximum allowable stress, thermal-overload-relay selection, voltage degradation, actuator output and margin. In addition, the administrative module manages user information, approval system and code information. MOVIDIK controls a huge amount of evaluation data and piles up the safety information of safety-related MOV. The MOVIDIK will improve the efficiency of safety evaluation work and standardize the analysis process for the MOV.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.49-57
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• 2010

This paper describes the design, construction, and fundamental testing of a precision rotational device that utilizes piezoelectric elements as a source of driving force and impact drive mechanism as a driving principle. A novel device structure is designed and the numerical simulations about the static displacement, stress distribution, and mode shape of the designed structure are performed. A fabricated rotational device has been rotated successfully by applying saw-shaped voltages to the piezoelectric elements. The one-step rotational angle was $0.44{\times}10^{-3}$ rad at the applied voltages of 80V. The angular velocities of the device were revealed to be increased as the driving frequency and voltage were respectively increased and the preload was decreased. The device has a feature that it can be translated as well as rotated. An experimental result shows that the device was translated by ${\pm}4.56{\mu}m$ maximum when the 120V sinusoidal voltages with a phase difference of $180^{\circ}$ were respectively supplied to two piezoelectric elements.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1254-1257
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• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.720-723
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• 2005

We studied the quantitativity of the image sticking which is occured by the resicual DC in the fringe-electric field switching (FFS) mode. Actually, in the FFS mode driven by the strong fringe electric field, the asymmetric residual DC was formed in the bottom substrate. It made the impurity ion stick to the alignment layer such as polyimde layer. Thus, the differnece of the luminance existes after the stress check pattern is applied to the panel so that we can see the image sticking. This image sticking decreases as the residual DC value between specific patterns decreases. Therefore, it is necessary to control the residual DC for the FFS mode with the high image quality. It is possible to eliminate the image stiking when the extra pixel voltage is applied through the circuit tunning for reducing the difference of residual DC accroding to the panel position.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.1-4
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• 2005

A higher order zig-zag shell theory is developed to refine accurately predict deformation and stress of smart shell structures under the mechanical, thermal, and electric loading. The displacement fields through the thickness are constructed by superimposing linear zig-zag field to the smooth globally cubic varying field. Smooth parabolic distribution through the thickness is assumed in the transverse deflection in order to consider transverse normal deformation. The mechanical, thermal, and electric loading is applied in the sinusoidal distribution function in the in-surface direction. Thermal and electric loading is given in the linear variation through the thickness. Especially, in electric loading case, voltage is only applied in piezo-layer. The layer-dependent degrees of freedom of displacement fields are expressed in terms of reference primary degrees of freedom by applying interface continuity conditions as well as bounding surface conditions of transverse shear stresses. In order to obtain accurate transverse shear and normal stresses, integration of equilibrium equation approach is used. The numerical examples of present theory demonstrate the accuracy and efficiency of the proposed theory. The present theory is suitable for the predictions of behaviors of thick smart composite shell under mechanical, thermal, and electric loadings combined.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.62-67
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• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.12
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• pp.153-159
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• 1997

A thermally-driven polysilicon microactuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS(tetraethylorthosilicate) oxide as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And newly developed HF GPE(gas-phase etching) process was also employed to eliminate the troublesome stiction problem using anhydrous HF gas and CH$_{3}$OH vapor, and successfully fabricated the microactuators. The actuation is incurred by the thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon microactuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10V and 50Hz square wave. The actuating characteris- tics are also compared with the simulalted results considering heat transfer and thermal expansion in the polysilicon layer. This microactuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1067-1072
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• 2009

YBCO coated conductor is named by second generation superconductor tapes. It is different with first generation superconductor tapes. YBCO coated conductor's specific difference with Bi-2223/Ag tape is more strong mechanical durability. This is important role to apply to superconducting machines. For mechanical transforming of YBCO coated conductors, we are using the well designed former. The merit of transformation is several. First, we vary the superconducting characteristics according to mechanical stress. Second, we reduce the volume of superconductor, so we achieve reducing the volume of superconducting machines. On this study, we experiment the transporting current characteristics of one types YBCO coated conductor. YBCO coated conductor with Ie of 70 A and voltage grade of 0.6 V/cm were connected to spiral former to conduct current application test.