• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1349-1352
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• 2009

We report the results of the surface chemistry of deuterized ethanol exposed Zircaloy-4 (Zry-4) surfaces with various amount of $C_2D_5$OD exposures at 190 K. This system was examined with Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) techniques. In TPD study, $D_2$ was evolved at two different desorption temperature regions accompanying with broad desorption background. The lower temperature feature at around 520 K showed first-order desorption kinetics. The high temperature desorption peak at around 650 K shifted to lower desorption temperature as the exposure of $C_2D_5$OD increased. The Zr(MNV) Auger peak shifted about 2.5 eV from 147 eV to lower electron energy followed by 300 L of $C_2D_5$OD dosing. This implies metallic zirconium was oxidized by deuterized ethanol adsorption. After stepwise annealing of the oxidized Zry-4 sample up to 843 K, the shifted Zr(MNV) peak was gradually shifted back to metallic zirconium peak position. After the sample was heated to 843 K, the oxygen content near the Zry-4 surface was recovered to clean surface level. The concentration of carbon, however, was not recovered by annealing the sample.

• 폴리머
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• 제25권1호
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• pp.56-62
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• 2001

Polyethylene terephthalate(PET) 필름 시편을 약 0.5~500 mm/min의 속도까지 단계적으로 연신시켰을 때, 플라스틱 변형이 일어나는 동안에 투명 및 불투명 밴드들이 존재하는 넥킹영역이 형성되었다. 상기 시편의 응력-변형 곡선을 살펴보면, 응력 진동이 뚜렷하게 발생하였음을 확인할 수 있었다. 한편, 열처리된 시편의 응력-변형 곡선을 살펴보면, 응력 진동이 발생하지 않았음을 확인할 수 있었다. 시편들의 미세구조는 광학 현미경을 통하여 동적으로 관찰하였고, 시편들의 열적 특성은 시차 주사 열량기를 사용하여 10 ${\circ}C$/min의 승온 속도에서 측정하였다. 또한, 시편들의 배향화 및 결정화 정도는 단색-핀홀법을 이용하여 측정하였고, 시편들의 탄성계수는 동적 기계 분석기를 통하여 -150~70 ${\circ}C$의 온도 범위에서 1 Hz의 주파수 대에서 측정하였다. PET 펠렛을 전기로에서 약 83${\circ}C$에서 30분 동안 열처리하여 투명한 PET 제품을 제작하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.571-574
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• 2005

We demonstrated a high speed liquid crystal (LC) display mode based on a nonchiral smectic C LC in an antiparallel planar geometry. In this antiparallel planar nonchiral smectic C (APNSC) LC mode, analog gray scales and wide viewing properties are achieved using a stepwise thermal annealing process (STAP). Because of an initially stable LC alignment in large area through the STAP, the APNSC LC mode exhibits the characteristics of fast response and high contrast ratio. This new APNSC mode is suitable for processing the dynamic image at a video rate in the next-generation LCDs.

• Bulletin of the Korean Chemical Society
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• 제9권5호
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• pp.289-291
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• 1988

The ratio of trivalent to divalent copper has been determined by the redox titration for two superconducting phases of $YBa_2Cu^{3+}_{2x}Cu^{2+}_{3-2x}O_{6.5+x}$ with the onset temp. of 60K (x = 0.23 ${\pm}$ 0.01) and 90K (x = 0.35 ${\pm}$ 0.02), and for the insulating one (x ${\cong}$ 0) which was kept in an ambient atmosphere for 72 hrs. It is found that $T_c$, and the ratio of $Cu^{3+}/Cu^{2+}$ depend strongly on the annealing temperature and time. A typical orthorhombic phase can easily be obtained by a slow cooling or stepwise cooling at $PO_2$ = 1 atm, and shows a high Tc (ca. 90K) superconductivity.

• 한국재료학회지
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• 제3권6호
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• pp.624-631
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• 1993

Alumimium Titanate-Mullite 복합체는 $Al_{2}O_{3}$분말 알콜용액에서 $Si(OC_{2}H_{5})_{4}$와 $Ti(OC_{2}H_{5})_4$ 의 단계적인 가수분해로 합성하였다. Sol-Gel 방법으로 합성된 모든 분말은 비정질과 단분산이고 좁은 분말크기의 분포를 보였다. 소결체($1600 ^{\circ}C$/2h)는 임계분해온도인 $1100^{\circ}C$에서 100시간 동안과 750와 $1400^{\circ}C$ 100시간동안 반복적인 열적 내구성 및 열충격 시험을 수행하였다. 가장 좋은 열적 내구성은 aluminium titanate함유량이 70rhk 80vol%일때 얻어졌으며, 이들은 위 실험을 한후 아주 적은 미세구조와 열팽창 곡선의 변화를 나타내었다. 소결체 미세구조의 붕괴는 주사현미경, X-선회절분석과 Dil-atometer로 연구하였다. 위 연구는 이와같은 과정에 의하여 합성된 aluminium titanate-mullite복합체의 서비스 수명을 예상하기 위하여 시도되었다.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.63-77
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• 1998

The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.