• Title/Summary/Keyword: step vacuum pressure

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Fabrication of Transition Metal doped Sapphire Single Crystal by High Temperature and Pressure Acceleration Method

  • Park, Eui-Seok;Jung, Choong-Ho;Kim, Moo-Kyung;Kim, Hyung-Tae;Kim, Yoo-Taek;Hong, Jung-Yoo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.97-102
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    • 1998
  • Transition metal Cr3+ and Fe3+ ion was diffused in white sapphire {0001}, {1010} crystal plane which were grown by the Verneuil method. It enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion. Metallic oxide was synthesized by precipitation method and it's composition was mainly alumina which doped with chromium or ferric oxide. In case using metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under 1x10-4 torr of vacuum pressure at 1900(iron metal) and 2050(chromium)℃, first step. Diffusion condition were kept by 6atm of N2 accelerating pressure at 2050∼2150℃. Each surface density of sapphire crystal are 0.225(c) and 0.1199atom/Å2(a). The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in th plane of {1010} than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

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A COMPARISON OF APICAL SEAL FOLLOWING "STEP-DOWN/BALANCED FORCE" AND "STEP-DOWN/STEP-BACK" ROOT CANAL SHAPING (Balanced Force와 Step-Back 근관성형후 치근단 폐쇄효과의 비교연구)

  • Lee, Yun-Hee;Kim, Jong-Hwa;Son, Ho-Hyun;Lee, Kwang-Won
    • Restorative Dentistry and Endodontics
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    • v.20 no.2
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    • pp.780-788
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    • 1995
  • The purpose of this study was to compare the apical seal following root canal shaping by different methods. From fourty extracted mandibular 1st and 2nd molars, fourty mesial roots whose canals have some degree of curvature were selected. The mesiobuccal root portion including mesiobuccal portion of a crown was sectioned in each molar. After access cavity preparation for the mesiobuccal canal, working length was determined with # 10 K-file. The sectioned roots were implanted in acrylic resin block and randomly divided into four groups. The canals of group I were shaped by step-down/balanced force, group II by stepdown/step-back, group III by step-back and group IV by conventional method. All of the shaped canals were obturated by Thermafil method and access cavities were filled with IRM. The roots were removed from acrylic resin block and placed in 100 % humidity for 7days. Except the root surfaces of apical 2mm, the root surfaces were nail-varnished 3 times. After the roots were placed in 700 torr vacuum pressure for 15 minutes, they were immersed in 2% methylene blue solution for 4 days. Nail varnishes were removed with acetone. After that, the roots were decalcified in 5 % nitric acid and dehydrated with alcohol series. Transparent specimens were made by methyl salicylate and the quality of apical seal was assessed by measuring the leakage linearly. The results were as follows. 1. The leakage in canals shaped by step-down/balanced force method was significantly less than that in canals shaped by step-back method(P<0.05) and was less but not statistically than that in canals shaped by step-down/step-back method (P>0.05). 2. The leakage in canals shaped by step-down/step-back method was less than that in canals shaped by step-back method, but there was no statistical significance(P>0.05). 3. The leakage in canals shaped by conventional method was significantly more than that in canals shaped by step-down/balanced force, step-down/step-back and step-back method (P<0.05).

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Characteristics and Fabrication of ZTO/Ag/ ZTO Multilayer Transparent Conducting Electrode

  • Cho, Se-Hee;Yang, Jeong-Do;Wei, Chang-Hwan;Pandeyd, Rina;Byun, Dong-Jin;Choia, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.339-339
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    • 2013
  • We study on the optical and electrical properties of indium-free ZTO(ZnSnO)/Ag/ZTO (ZAZ) multilayer electrodes for the low-cost transparent electrode. In the first step, each single layer was deposited using rf magnetron in-line sputter with various working pressure based on $O_2$/$Ar+O_2$ ratio (0~3%) and power at room temperature. Secondly, we studied the optical and electrical properties by analyzing the refractive index, extinction coefficient, transmittance and resistivity of each layer. Finally, we optimized the thickness of each layer using macleod simulation program based on the analyzed optical properties and fabricated the multilayer electrode. As a result, We achieved a low sheet resistance of $11{\Omega}$/sq and anaverage transmittance of 80% in the visible region of light (380~780 nm). This indicates that indium-free ZAZ multilayer electrode is a promising low-cost and low-temperature processing electrode scheme.

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CoFeB과 IrMn 자성 박막의 고밀도 반응성 이온 식각

  • Kim, Eun-Ho;So, U-Bin;Gong, Seon-Mi;Jeong, Yong-U;Jeong, Ji-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.232-232
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    • 2010
  • 정보화 산업의 발달은 DRAM, flash memory 등을 포함한 기존의 반도체 메모리 소자를 대체할 수 있는 차세대 메모리 소자에 대한 개발을 요구하고 있다. 특히 magnetic random access memory (MRAM)는 SRAM과 대등한 고속화 그리고 DRAM 보다 높은 기록 밀도가 가능하고 낮은 동작 전압과 소비전력 때문에 대표적인 차세대 비휘발성 메모리로 주목받고 있다. 또한 MRAM소자의 고집적화를 위해서 우수한 프로파일을 갖고 재증착이 없는 나노미터 크기의 magnetic tunnel junction (MTJ) stack의 건식 식각에 대한 연구가 선행되어야 한다. 본 연구에서는 고밀도 반응성 이온 식각법(Inductively coupled plasma reactive ion etching; ICPRIE)을 이용하여 재증착이 없이 우수한 식각 profile을 갖는 CoFeB과 IrMn 박막을 형성하고자 하였다. Photoresist(PR) 및 Ti 박막의 두 가지 마스크를 이용하여 HBr/Ar, HBr/$O_2$/Ar 식각 가스들의 농도를 변화시키면서 CoFeB과 IrMn 박막의 식각 특성들이 조사되었다. 자성 박막과 동일한 조건에 대하여 hard mask로서 Ti가 식각되었다. 좋은 조건을 얻기 위해 HBr/Ar 식각 가스를 이용 식각할 때 pressure, bias voltage, rf power를 변화시켰고 식각조건에서 Ti 하드마스크에 대한 자성 박막들의 selectivity를 조사하고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

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전자빔 후 처리를 이용한 유연성 태양전지용 AZO 박막의 특성 향상에 관한 연구

  • Lee, Hak-Min;Hwang, Jin-Ye;Nam, Sang-Hun;Kim, Hyeok;Kim, Yong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.191.1-191.1
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    • 2013
  • 현재 산업계 전반적으로 사용되고 있는 박막형 태양전지 투명 전도막의 재료로는 ITO 와 Al, In, Ga, B, Si, F 등으로 도핑된 ZnO 박막이 사용되고 있으며, 그 중에서도 Al 이 도핑된 ZnO 박막은 넓은 밴드갭을 가진 n-type 반도체로서, 적외선 및 가시광 영역에서의 높은 투과성과 우수한 전도성을 가지며, 고온에서 안정된 전기적 특성, 낮은 원가 등의 장점을 지녀 그 응용 연구가 활발히 이루어지고 있다 [1]. 본 연구에서는 RF magnetron Sputter 법을 이용하여 Flexible 기판 위에 AZO 박막을 증착하였다. 실험변수로는 RF power, Pressure등을 이용하였고, 최적조건에서의 박막의 투과도는 90%이상, 면저항은 30 ${\Omega}/{\square}$ 이하를 나타내었다. 그리고 (주)인포비온에서 원천기술을 갖고있는 EBA technology를 이용하여 후처리 하여 전기적, 광학적, 구조적인 특성의 변화를 관찰하였다. AZO 박막의 두께를 측정하기 위해 ${\alpha}-step$과 SEM을 이용하였고, 투과도는 UV-Vis spectrometer를 사용하여 박막의 투과도 변화를 관찰 하였다. 전기적인 특성은 4-Point probe를 이용하여 측정하였다. 또한, 박막의 결정성과 거칠기의 변화는 XRD(X-ray Diffraction)와 원자간력현미경(Atomic Force Microscope; AFM) 을 이용하여 측정하였으며, 전기 광학적 특성 변화는 Figure Of Merit(FOM) 수치로 분석하였다. 본 연구에서 AZO 박막의 특성은 EBA 조사 후 특성의 향상이 이루어지는 것을 관찰할 수 있었다.

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Enhancement of Crystallinity in ZnO:Al Films Using a Two-Step Process Involving the Control of the Oxygen Pressure (산소 압력의 조절과 함께 두 번의 증착 과정을 이용한 ZnO:Al 박막에 결정성의 향상)

  • Moon, Tae-Ho;Yoon, Won-Ki;Lee, Seung-Yoon;Ji, Kwang-Sun;Eo, Young-Joo;Ahn, Seh-Won;Lee, Heon-Min
    • Journal of the Korean Vacuum Society
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    • v.19 no.2
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    • pp.128-133
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    • 2010
  • ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

Effects of epilayer growth temperature on properties of undoped GaN epilayer on sapphire substrate by two-step MOCVD (2단계 MOCVD법에 의해 사파이어 기판 위 성장된 undoped GaN 에피박막의 특성에 미치는 고온성장 온도변화의 영향)

  • Chang K.;Kwon M. S.;Cho S. I.
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.222-228
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    • 2005
  • Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electrical property In a horizontal MOCVD reactor, the film was grown at 300 Tow low-pressure with a fixed nucleation temperature of $500^{\circ}C$, varing the final growth temperature from $850\~1050^{\circ}C$ . The undoped GaN epilayers were characterized by atomic force microscopy, high-resolution x-ray diffractometer, photoluminescence, and Hall effect measurement.

Etch Characteristics of $SiO_2$ by using Pulse-Time Modulation in the Dual-Frequency Capacitive Coupled Plasma

  • Jeon, Min-Hwan;Gang, Se-Gu;Park, Jong-Yun;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.472-472
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    • 2011
  • The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

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The Estimating an Effect of Rapid Flux Increase to a Membrane in the Intermittent Aeration MBR Process Using Alum Treatment (응집제를 활용한 간헐포기 MBR공정에서 순간플럭스 증가가 분리막에 미치는 영향 평가)

  • Choi Song-Hyu;Cho Nam-un;Han Myong Su
    • Membrane Journal
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    • v.15 no.1
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    • pp.70-83
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    • 2005
  • By supplying air intermittently in various mode, the effects of oxic/anoxic time ratio and air scrubbing in aeration condition on the membrane flux and permeability were investigated. When suction pump stops, vacuum pressure remains inside the suction pump. Therefore, the effect of remaining vacuum pressure in the suction pump on fouling of membrane was investigated. The effect of EPS (Extra cellular Polymeric Substance) which is generated due to the long SRT and high concentration of MLSS and the dose of coagulant on the membrane were also investigated. The suitable oxic/anoxic time ratio for the best removal efficiency of organic matter and nitrogenous matter was 40 minutes (Oxic) : 20 minutes (Anoxic). At this time ratio, alum was dosed into the aeration tank. The result of dosing alum was that the concentration of alum solution might affect nitrification and denitrification. To remove 1 mg/L of phosphorus in MBR process, it needs 0.75 mg/L of alum solution.

Preferential Sorption and Its Role on Pervaporation of Organic Liquid Mixtures

  • 박현채;김은영
    • Proceedings of the Membrane Society of Korea Conference
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    • 1995.04a
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    • pp.34-35
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    • 1995
  • The unique feature of pervaporation is the mass transfer from a liquid phase to a vapor phase through a non-porous polymeric membrane. When a liquid mixture is brought into contact with a membrane at one side, it is sorbed into the membrane. Due to a driving force applied across the membrane, the sotbed liquid molecules permeate through the membrane and evaporate at the downstream side of the membrane. In pervaporation the permeated species are usually removed from the downstream side under a relatively low vapor pressure, for example by evacuation with a vacuum pump. As far as this condition is fulfilled, the evaporation step can be considered to be much faster than sorption or diffusion. Hence evaporation does not contribute to permselectivity. Therefore the separation by pervaporation results from the differences in the preferential sorption of the individual components of a mixture into the membrane together with the diffusion rates through the membrane. This postulation implies that both sorption and diffusion phenomena have to be accounted for to understand the physico-chemical nature of the pervaporation separation process.

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