• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 대한예방의학회:학술대회논문집
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• 1994.02b
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• pp.84-86
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• 1994

AS A SOCIETY, we are in conflict with ourselves about the cost of health care. 1 On one hand, we want the best care possible, regardless of cost. On the other hand, we are not willing to pay the cost of the care we want. Our conflict parallels a flaw in the medical marketplace. An essential condition for achieving an equilibrium between cost and value is that the two must be connected through decisions. When people decide what products and services (goods) they want, they must not only see the value they will receive, but they mast also be responsible for the costs. Because of a variety of features of the medical marketplace-most notably third-party coverage, third-party advice, and uncertainty about outcomes-the required connection between value and cost is severed. The result is what we see. One side of our collective mind demands more services while the other side cries that costs are too high. Resolving our conflict will require connecting value to cost. An essential step in accomplishing this will be to incorporate costs in practice policies. 1 As controversial as that thought might seem (the great majority of practice policies currently do not take costs into account except in the most rudimentary way), arriving at the conclusion is the easy part. A more difficult issue is how to implement the goal of connecting value to cost. Suppose we agree that, in principle, costs should be considered when practice policies are designed, and that an activity should be recommended and covered only if its health outcomes (benefits minus hanns) are deemed to be worth its costs. The next questions are, Who should do the deeming? What should the deemers be asked?

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1234-1240
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• 2004

We studied on the electro-optic characteristics and dynamic stability according to an undesirably defined pretilt angle induced in high step coverage of pixel area for the Twisted Nematic (TN) / Fringe-Field Switching (FFS) mode. In case of the TN mode, LC directors twist reversely near the edges of thin-film-transistor and black matrix where the pretilt angle of the LC is not well defined. Therefore, the voltage-dependent dynamics of the LC in TN mode is unstable and shows the bad electro-optic characteristics. On the other hand, in case of the FFS mode, the LCs are twisted parallel to the bottom substrate by fringe electric field and the electro-optic characteristic is not influenced by the pretilt angle of the LC which is not well defined.

• Journal of the Korean institute of surface engineering
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• v.26 no.1
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.5-12
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• 2004

The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the $Ar/O_2$ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophllic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the $Ar/O_2$ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investifated. Accelerated $Ar^{+}$ lons in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate. therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.C.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.176-177
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• 2015

최근 자연계에 존재하는 광학 구조체를 모사하여 우수한 반사 방지 효과를 표면에 구현하고자 하는 연구가 이루어지고 있으며, 특히 우수한 무반사 특성을 가지고 있는 나방의 눈 구조를 모사하여 응용하고자 하는 연구가 활발히 진행되고 있다. 하지만, 주로 폴리머를 기판으로 하여 구현되는 모스아이 구조의 필름은 기계적 성질이 좋지 않아 문제가 되고 있다. 따라서, 본 연구에서는 모스아이 나노구조가 형성된 폴리머 기판에 비해 기계적 물성이 우수한 $Al_2O_3$ 물질을 적용하여, 모스아이 패턴의 기계적 특성을 향상 시키면서도, 모스아이 패턴이 가지는 고유의 우수한 광학적 성질을 유지시키기 위한 실험을 진행하였다. 모스아이 패턴의 광학적 성질을 유지하기 위해서는 나노구조 돌기상에 위치에 따른 두께 차이가 최소화된 균일한 코팅층을 형성하여 그 구조를 유지시킬 필요가 있으므로 이러한 구조물상에 단차피복성(Step Coverage)이 우수하고 sub-nm 단위의 정밀한 두께 조절이 용이한 원자층 증착법(Atomic layer deposition, ALD)을 이용하여 박막을 증착하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.319.1-319.1
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• 2013

Solid oxide fuel cells (SOFCs) have been recognized as one of emerging renewable energy sources, due to minimized pollutant production and high efficiency in operation. The performance of SOFCs is largely dependent on the electrode polarization which involves the oxidation/reduction in cathodes and anodes along with the charge transport of ions and electronic carriers. Atomic layer deposition is based on the alternate chemical surface reaction occurring at low temperatures with high uniformity and superior step coverage. Such features can be extended into the coating of metal oxide and/or metal layer onto the porous materials. In particular, the atomic layer deposition is can manipulated in controlling the charge transport in terms of triple phase boundaries, in order to control artificially the electrochemical polarization in electrodes of SOFC. The current work applied atomic layer deposition of metal oxides intro the electrodes of SOFCs. The corresponding effect was monitored in terms of the electrochemical characterization. The roles of atomic layer deposition in solid oxide fuel cells are discussed towards optimized towards long-term durability at intermediate temperature.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.14-17
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• 2007

The slot-die coating & calcination process was adopted to fabricate the long YBCO precursor films on the buffered metal tape for the $2^{nd}$ generation coated conductors. To obtain the smooth and crack-free surface of long YBCO precursor films, the parameters of slot-die coating and the process variables of calcination step must be optimized simultaneously in reel-to-reel method. Among the parameter of slot-die coating process, the viscosities of the precursor solution was controlled from 60cP to 200cP to obtain the thicker films from on single coating. The slot-die gap, the injection rate of precursor solution, the moving speed of buffered metal tape etc. are controlled lot the full coverage and smooth surface of YBCO precursor films. The slot-die coated films are moved through the tube furnace with predetermined heating profiles in humid oxygen ambient The YBCO precursor films was identifed with $Y_2O_3,\;BaF_2$, and CuO phase by XRD and consisted of fine grains of about 20nm size observed by FE-SEM. The YBCO films show the critical current density over $MA/cm^2$ using the precursor films formed by the continuous slot-die coating & calcination process.