• Electronic Materials Letters
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• v.14 no.6
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• pp.700-711
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• 2018

CdS synthesized by the chemical bath method at $70^{\circ}C$, has been used as an electron transport layer in the planar structure of the perovskite solar cells. A two-step spin process produced a mixed halide perovskite of $CH_3NH_3PbI_{3-x}Cl_x$ and a mixture of $PbCl_2$ and $PbI_2$ was deposited on CdS, followed by a sub-sequential reaction with MAI ($CH_3NH_3I$). The added $PbCl_2$ to $PbI_2$ in the first spin-step affected the structure, orientation, and shape of lead halides, which varied depending on the content of Cl. A small amount of Cl enhanced the surface morphology and the preferred orientation of $PbI_2$, which led to large and uniform grains of perovskite thin films. In contrast, the high content of Cl produces a new phase PbICl in addition to $PbI_2$, which leads to the small and highly uniform grains of perovskites. An improved surface coverage of perovskite films with the large and uniform grains maximized the performance of perovskite solar cells at 0.1 molar ratio of $PbCl_2$ to $PbI_2$. The depth profiling of elements in both lead halide films and mixed halide perovskite films were measured by Rutherford backscattering spectroscopy, revealing the distribution of chlorine along with the thickness, and providing the basis for the mechanism for enhanced preferred orientation of lead halide and the microstructure of perovskites.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.781-783
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• 2014

Mobile ad hoc network(MANET) consists of node that has mobility. MANET has increased overhead that caused by frequent topology changes. For reducing overhead, hierarchical network that communicates through cluster head node has been researched. When traffic is concentrated on cluster head node, cluster member node can't send message. To solve this problem, we proposed Step Parent algorithm. Proposed algorithm, cluster member node checks traffic of cluster head node using route path of other cluster head node in efficient coverage area. When cluster head node has increased traffic, cluster member node make a new route path by route path by routing path to another cluster head node. So cluster member node sends a message to destination node, we check improving delivery ratio.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.619-626
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• 2004

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.107-107
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• 2003

원자층 증착(ALD, Atomic Layer Deposition)기술은 기판 표면에서의 self-limiting reaction을 통해 매우 얇은 박막을 형성할 수 있고, 두께 및 조성 제어를 정확히 할 수 있으며, 복잡한 형상의 기판에서도 100%에 가까운 step coverage를 얻을 수 있어 초미세패턴의 형성과 매우 얇은 두께에서 균일한 물리적, 전기적 특성이 요구되는 초미세 반도체 공정에 적합하다. 특히 반도체의 logic 및 memory 소자의 gate 공정에서 절연막과 보호막으로, 그리고 배선공정에서는 층간절연막(ILD, Inter Layer Dielectric)으로 사용하는 silicon oxide 박막에 적용될 경우, LPCVD 방법에 비해 낮은 온도에서 증착이 가능해 boron과 같은 dopant들의 확산을 최소화하여 transistor 특성 향상이 가능하며, PECVD 방법에 비해 전기적·물리적 특성이 월등히 우수하고 대면적 uniformity 증가가 기대된다. 본 연구에서는 자체적으로 설계 및 제작한 장비를 이용하여 silicon oxide 박막을 ALD 방법으로 증착하고 그 특성을 살펴보았다. 먼저, cycle 수에 따른 증착 박막 두께의 linearity를 통해서 원자층 증착(ALD)임을 확인할 수 있었으며, reactant exposure(L)와 증착 온도에 따른 deposition rate 변화를 알아보았다 Elipsometer를 이용해 증착된 silicon oxide 박막의 두께 및 굴절률과 그 uniformity를 관찰하였고, AES 및 XPS 분석 장비로 박막의 조성비와 불순물 성분을 살펴보았으며, 증착 박막의 치밀성 평가를 위해 HF etchant로 wet etch rate를 측정하여 물리적 특성을 정리하였다. 특히, 기존의 박막 증착 방법인 LPCVD와 PECVD에 의한 silicon oxide박막의 물성과 비교, 평가해 보았다. 나아가 적절한 촉매 물질을 선정하여 원자층 증착(ALD) 공정에 적용하여 그 효과도 살펴보았다.

• Journal of Information Technology Services
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• v.12 no.3
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• pp.111-126
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• 2013

As the gaps become narrower in interconnection fee and volume rate, the MNOs began to introduce flat pricing for unlimited voice traffic competitively in Korea wireless telecommunication market : 'unlimited talks within intra-network' by the 1st operator, followed by the 3rd operator's 'unlimited talks over all networks'. As a result, subscribers tip in toward the third ranked operator and could bring a substantial change to steadfast market structure over the last decade in Korea. This paper aims to develop a simple economic model to analyze competition with flat pricing for unlimited voice traffic, and to check whether the pricing can be appropriate for the MNOs. The results show that MNOs already step in the necessary conditions to launch flat pricing for voice traffic. It also predicts that the MNOs compete with unlimited talk over all networks and set a single fee in an equilibrium. At present, the MNOs run virtually identical pricing for unlimited talk over all networks, considering their differentiation with respect to service quality, coverage and brand preference.

• Electrical & Electronic Materials
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• v.28 no.2
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• pp.25-33
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• 2015

Ruthenium (Ru) thin films were grown on thermally-grown $SiO_2$ substrates by atomic layer deposition (ALD) using a sequential supply of four kinds of novel zero-valent Ru precursors, isopropyl-methylbenzene-cyclohexadiene Ru(0) (IMBCHDRu, $C_{16}H_{22}Ru$), ethylbenzen-cyclohexadiene Ru(0) (EBCHDRu, $C_{14}H_{18}Ru$), ethylbenzen-ethyl-cyclohexadiene Ru(0) (EBECHDRu, $C_{16}H_{22}Ru$), and (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, $C_{12}H_{16}Ru$) and molecular oxygen (O2) as a reactant at substrate temperatures ranging from 140 to $350^{\circ}C$. It was shown that little incubation cycles were observed for ALD-Ru processes using these new novel zero-valent Ru precursors, indicating of the improved nucleation as compared to the use of typical higher-valent Ru precursors such as cyclopentadienyl-based Ru (II) or ${\beta}$-diketonate Ru (III) metallorganic precursors. It was also shown that Ru nuclei were formed after very short cycles (only 3 ALD cycles) and the maximum nuclei densities were almost 2 order of magnitude higher than that obtained using higher-valent Ru precursors. The step coverage of ALD-Ru was excellent, around 100% at on a hole-type contact with an ultra-high aspect ratio (~32) and ultra-small trench with an aspect ratio of ~ 4.5 (top-opening diameter: ~ 25 nm). The developed ALD-Ru film was successfully used as a seed layer for Cu electroplating.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.166-169
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• 2006

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNT) thin films were prepared on $Pt(111)/Ti/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_3$, $Nd(TMHD)_3$ and $Ti(O^iPr)_2(TMHD)_2$ were used as the precursors and were dissolved in n-butyl acetate. The BNT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNT thin film was $31.67\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• International Journal of Aeronautical and Space Sciences
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• v.10 no.2
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• pp.1-11
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• 2009

In this paper, two algorithms to solve the path planning problem with constraints from obstacles are presented. One proposed Algorithm is "Grid point-based path planning". The first step of this algorithm is to set points which can be the waypoints around the field. These points can be located inside or outside of the field or the obstacles. Therefore, we should determine whether those points are located in the field or not. Using the equations of boundary lines for a region that we are interested in is an effective approach to handle. The other algorithm is based on the boundary lines of the agricultural field, and the concept of this algorithm is well known as "boustrophedon method". These proposed algorithms are simple but powerful for complex cases since it can generate a plausible path for the complex shape which cannot be represented by using geometrical approaches efficiently and for the case that some obstacles or forbidden regions are located on the field by using a skill of discriminants about set points. As will be presented, this proposed algorithm could exhibit a reasonable accuracy to perform an agricultural mission.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.