• 대한전자공학회논문지
• /
• 제26권10호
• /
• pp.1606-1616
• /
• 1989

In this paper, the design of DYNAMIC CMOS ARRAY LOGIC which has both advantages of dynamic CMOS and array logic circuits is proposed. The major components of DYNAMIC CMOS ARRAY LOGIC are two-stage dunamic CMOS circuits and an internal clock generator. The function block of dynamic CMOS circuits is realized as a parallel interconnection of NMOS transistors. Therefore the operating speed of DYNAMIC CMOS ARRAY LOGIC is much faster than the one of the conventional dynamic CMOS PLAs and static CMOS PLA. Also, the charge redistribution problem by internl delay is solved. The internal clock generator generates four internal clocks that drive all the dynamic CMOS circuits. During evaluation, two clocks of them are delayed as compared with others. Therefore the race problem is completoly eliminated. The internal clock generator also prevents the reduction of circuit output voltage and noise margin due to leakage current and charge coupling without any penalty in circuit operating speed or chip area utilization.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권1호
• /
• pp.22-29
• /
• 2006

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.