• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.261-267
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• 2020

The demand for faster, lighter, and thinner portable electronic devices has brought about a change in semiconductor packaging technology. In response, a stacked chip-scale package(SCSP) is used widely in the assembly industry. One of the key materials for SCSP is a die-attach film (DAF). Excellent flowability is needed for DAF for successful die attachment without voids. For DAF with high flowability, two-step curing is often required to reduce a cure crack, but one-step curing is needed to reduce the processing time. In this study, DAF composition was categorized into three groups: cure (epoxy resins), soft (rubbers), hard (phenoxy resin, silica) component. The effect of the composition on a cure crack was examined when one-step curing was applied. The die-attach void and flowability were also assessed. The cure crack decreased as the amount of hard components decreased. Die-attach voids also decreased as the amount of hard components decreased. Moreover, the decrease in cure component became important when the amount of hard component was small. The flowability was evaluated using high-temperature storage modulus and bleed-out. A decrease in the amount of hard components was critical for the low storage modulus at 100℃. An increase in cure component and a decrease in hard component were important for the high bleed-out at 120℃(BL-120).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.162-162
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• 2012

ZnPc and CuPc molecules stacked similar way in the film, but showed different growth modes in thermal evaporation. The distribution of CuPc crystals did not change by the film thickness, whereas the distribution of ZnPc became random as the increase of the film thickness. The disc type nanograins of CuPc were quite regularly distributed at the initial growth regime and the regular distribution of nanograins was kept during the film growth. On the other hand, ZnPc consisted in ellipsoid shaped nanograins and the distribution of nanograins was not regular in the initial growth regime. The irregular distribution of nanograins changed to the regular mode at the later growth regime by showing structure factor in GISAXS measurement. The different initial nanograin distribution in ZnPc and CuPc was related to the different nanostructure in the mixed layer with C60 to form the bulk heterojunction.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.190-197
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• 1994

본 연구에서는 DC magnetron 스퍼터링법을 이용하여 고정밀, 고저항 저항체 박막으로 TaNx film을 제조하였을 때 형성될 수 있는 화합물 중 TaN0.1, TaN0.8과 TaN 박막의 Rs와 TCR특성을 평가하 고 film층의 우선방향성을 XRD를 이용하여 판명한 뒤 저항체의 Rs와 TCR에 미치는 영향을 조사하였 다. TaN0.1 박막이 35$\Omega$/$\square$의 면저항값과 안정된 TCR값을 나타내는 것을 알수 있었다. 두께50~200nm 의 TaN0.1과 Alumina 기판 사이에 정(+)의 TCR을 갖는 약 50nm의 Cr층을 증착하였을 때 Rs는 180$\Omega$/ $\square$ 과 TCR는 20ppm/$^{\circ}C$인 적층박막을 제조할 수 있었다. TaN0.1, TaN0.8 과 TaN 시편에서 화합물 형성 에 따른 Ta의 결합에너지를 ESCA를 이용하여 조사하였다. 이상의 연구결과로부터 TaN0.1 film이 TaNfilm 보다 고정밀, 고저항 박막 저항체 제조에 있어 우수한 전기저항 특성을 가지며 Cr 중간층 형성 으로 TCR이 $\pm$ppm/$^{\circ}C$정도로 안정된 고정밀 다층 저항체 박막을 형성할 수 있었다.

• Journal of the Korea Institute of Building Construction
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• v.12 no.3
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• pp.291-298
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• 2012

For cold weather concreting, frost damage at early age is generated in the concrete, and problems such as delaying of setting and hardening and lowering of strength manifestation emerge due to the low outside air temperature at the early stage of pouring, making the selection of an effective curing method critically important. Unfortunately, the tent sheet currently used as the curing film for heating insulation at work sites, not only has the problems of inferior permeability and extremely deteriorated airtightness, but a phenomenon of continuous fracturing is also generated along the direction of fabric of the material itself, presenting difficult circumstances for maintaining adequate curing temperature. The aim of this study was to develop an improved bubble sheet type curing film for heating insulation of cold weather concrete by combining mesh-tarpaulin, which has excellent tension properties, with bubble sheet, which offers superior insulation performance. The analysis showed that the improved curing film in which BBS1 is stacked to MT was a suitable replacement for curing films currently in use, as it has better permeability, tension property, and insulation performance than the T type film used at work sites today.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.258-259
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• 2005

[ $CuInSe_2$ ] thin films were fabricated at various fabrication conditions (substrate temperature, sputtering pressure, BC/RF power, vapor deposition, heat treatment). And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInSe_2$ thin films with stoichiometric composition. $CuInSe_2$ thin film was well made at the heat treatment of 500[$^{\circ}C$] of SLG/Cu/In/Se stacked elemental layer which was prepared by sputter and thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $1.27\sim9.88\times10^{17}[cm^{-3}]$, $49.95\sim185[cm^2/V{\cdot}s]$ and $10^{-1}\sim10^{-2}[\Omega{\cdot}cm]$, respectively

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.503-509
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• 2019

The demand for smaller, faster, and multi-functional mobile devices in increasing at a rapidly increasing rate. In response to these trends, Stacked Chip Scale Package (SCSP) is used widely in the assembly industry. A film type adhesive called die attach film (DAF) is used widely for bonding chips in SCSP. The DAF requires high flowability at high die attachment temperatures for bonding chips on organic substrates, where the DAF needs to feel the gap depth, or for bonding the same sized dies, where the DAF needs to penetrate bonding wires. In this study, the mixture design of experiment (DOE) was performed for three raw materials to obtain the optimized DAF recipe for low elastic modulus at high temperature. Three components are acrylic polymer (SG-P3) and two solid epoxy resins (YD011 and YDCN500-1P) with different softening points. According to the DOE results, the elastic modulus at high temperature was influenced greatly by SG-P3. The elastic modulus at $100^{\circ}C$ decreased from 1.0 MPa to 0.2 MPa as the amount of SG-P3 was decreased by 20%. In contrast, the elastic modulus at room temperature was dominated by YD011, an epoxy with a higher softening point. The optimized DAF recipe showed approximately 98.4% pickup performance when a UV dicing tape was used. A DAF crack that occurred in curing was effectively suppressed through optimization of the cure accelerator amount and two-step cure schedule. The imizadole type accelerator showed better performance than the amine type accelerator.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• Journal of the Korean Applied Science and Technology
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• v.19 no.4
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• pp.335-338
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• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1471-1475
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• 2007

In this paper, a novel embedded ultra wideband (UWB) band-pass filter is presented on a FR-4 package substrate including high Dk resin coated copper (${\varepsilon}_r=30$) film. The proposed UWB filter is comprised of a parallel resonator with meander-type uniform impedance resonator (UIR) and two series resonators with high Q circular stacked spiral inductor and metal-insulator-metal (MIM) capacitor. In order to obtain excellent attenuation characteristics by generating attenuation poles in lower and upper stop bands, a single MIM capacitor is added to each resonator. The fabricated FR-4 embedded UWB filter has insertion loss of -1.0dB and return loss of -11dB, respectively. It has also extremely wide bandwidth (over 50%) and small size ($3.7{\times}4{\times}0.77\;mm^3$) which is compatible with LTCC devices.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.189-193
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• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.