• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.121-124
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• 2008

In this paper, we will design a 800MHz broadband antenna after a problem of the narrow bandwidth is improved. This multiple band antenna unifies the CDMA(Code Division Multiple Access), GSM(Global System for Mobile telecommunication) and TRS(Trunked Radio System) band in the UHF bandwidth, and then it is possible at the shore base station or repeater as the commercial use. It used the duplex resonance effect It had the L-shaped feeding structure which adds the V-slot. And it improved profit using stack structure. It was measured that the frequency bandwidth of the designed antenna which is planed $792{\sim}1040MHz$ with 248MHz(33%). And the antenna gain is 9.4dBi, 3dB beam width $60^{\circ}$ in radiation pattern.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.6
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• pp.984-989
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• 2008

In this paper, we will design a 800MHz broadband antenna after a problem of the narrow bandwidth is improved. This multiple band antenna unifies the CDMA(Code Division Multiple Access), GSM(Global System for Mobile Telecommunication) and TRS(Trunked Radio System) band in the UHF band, and then it is possible at the shore base station or repeater as the commercial use. It used the duplex resonance effect it had the L-shared feeding structure which adds the U-slot. And it improved profit using stack structure. It was measured that the frequency bandwidth of the designed antenna which is planed $792{\sim}1040MHz$ with 248MHz(33%). And the antenna gain is 9.4dBi, 3dB beam width $60^{\circ}$ in radiation pattern.

• Korean Chemical Engineering Research
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• v.48 no.6
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• pp.791-794
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• 2010

This study presents channel design of a CDI stack to achieve high removal efficiency in a large scale by applying parallel flow structure with a concentrated stream. The flow pattern in the stack was simulated by COMSOL Multiphysics program. To prove the salt removal performance, a unit cell and 20 cell stacks were tested at a flow rate condition of 18 ml/min and 360 ml/min, respectively. The removal efficiencies of the unit cell and the 20 cell stacks were obtained as 70.8 % and 75.6 %, respectively, with 100 mg/L sodium chloride solution. During the operation of cell test, water pressures of unit cell and 20 cell pair stack maintained in the ranges of 1.1 psi and 1.3~1.5 psi, respectively. It was demonstrated that the parallel cell structure with two concentrated streams can be employed in a large scale CDI for salt removal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• The Journal of Information Technology
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• v.5 no.1
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• pp.69-77
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• 2002

The Bluetooth is expected to be one of the most popular wireless telecommunication technology in the near future, and the protocol stack is essential to providing the various services with the Bluetooth-embedding systems or devices. The Bluetooth specification is an open, global specification defining the complete system, however, the protocol stack is usually implemented partly in hardware and partly as software running on its system, with different implementations partitioning the functionality between hardware and software in different ways. I investigate how to design and implement the Bluetooth protocol stack according to its specification. I focus on the HCI and the lower layer of the software protocol stack as a basic step for the development of our own protocol stack. As a result, paper provides how to partitioning the role of HCI layer, and how to implement the relationship between HCI packets, it's functionality and the flow control. Experiments show the discovering other Bluetooth devices and their connection. Furthermore experiments demonstrate the proper operation of data communication between the Bluetooth modules.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2008.11a
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• pp.230-236
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• 2008

In this paper, a model-based stick-slip compensation for the micro-positioning is proposed using an enhanced stick-slip model based on statistical rough surface contact model. The smart structure is comprised with PZT (lead (Pb) zirconia (Zr) Titanate (Ti)) based stack actuator incorporating with the PID (Proportional-Integral-Derivative) control algorithm, mechanical displacement amplifier and positioning devices. For the stick-slip compensation, the elastic-plastic static friction model is used considering the elastic-plastic asperity contact in the rough surfaces statistically. Mathematical model of system for the positioning apparatus was derived from the dynamic behaviors of structural parts. PID feedback control algorithms with the developed stick-slip model as well as feedforward friction compensator are formulated for achieving the accurate positioning performance. Experimental results are provided to show the performances of friction control using the developed positioning apparatus.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.11
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• pp.1134-1142
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• 2008

In this paper, a model-based stick-slip compensation for the micro-positioning is proposed using an enhanced stick-slip model based on statistical rough surface contact model. The smart structure is comprised with PZT(lead (Pb) zirconia(Zr) Titanate(Ti)) based stack actuator incorporating with the PID(proportional-integral-derivative) control algorithm, mechanical displacement amplifier and positioning devices. For the stick-slip compensation, the elastic-plastic static friction model is used considering the elastic-plastic asperity contact in the rough surfaces statistically. Mathematical model of system for the positioning apparatus was derived from the dynamic behaviors of structural parts. PID feedback control algorithms with the developed stick-slip model as well as feedforward friction compensator are formulated for achieving the accurate positioning performance. Experimental results are provided to show the performances of friction control using the developed positioning apparatus.

• East Asian mathematical journal
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• v.23 no.1
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• pp.111-122
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• 2007

In this paper, we will show some relations between decomposition series {${\nu}^{\alpha}\;:\;{\alpha}$ is an ordinal } and supratopological series {${\sigma}_{\alpha}{\nu}\;:\;{\alpha}$ is an ordinal} for a neighborhood structure $\nu$ and the formular ${\sigma}_{\alpha}{\nu}\;=\;{\nu}^{({\omega}^{\alpha})}$, where $\omega$ is the first limit ordinal.

• KIPS Transactions on Software and Data Engineering
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• v.10 no.6
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• pp.235-242
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• 2021

In this work, we develop a Korean dependency parser based on a stack-pointer network that consists of a pointer network and an internal stack. The parser has an encoder and decoder and builds a dependency tree for an input sentence in a depth-first manner. The encoder of the parser encodes an input sentence, and the decoder selects a child for the word at the top of the stack at each step. Since the parser has the internal stack where a search path is stored, the parser can utilize information of previously derived subtrees when selecting a child node. Previous studies used only a grandparent and the most recently visited sibling without considering a subtree structure. In this paper, we introduce graph attention networks that can represent a previously derived subtree. Then we modify our parser based on the stack-pointer network to utilize subtree information produced by the graph attention networks. After training the dependency parser using Sejong and Everyone's corpus, we evaluate the parser's performance. Experimental results show that the proposed parser achieves better performance than the previous approaches at sentence-level accuracies when adopting 2-depth graph attention networks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.206-211
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• 2005

The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.