• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• 한국자기학회지
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• 제10권6호
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• pp.285-290
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• 2000

본 연구에서는 Hexagonal Barium Ferrite(BaM) 박막을 RF magnetron sputtering system을 이용하여 상온에서 증착한후, 85$0^{\circ}C$에서 열처리하여 결정화하였다. XRD pattern을 통해 BaM 박막의 working pressure 10 mTorr에 대한 산소분압(Po$_2$)을 0~3 mTorr가지 변화하여 알아본 결과, 1 mTorr 이하의 산소분압(Po$_2$)에서는 spinel 상과 BaM 상이 함께 형성되었으나, 1 mTorr 이상의 높은 산소분압(Po$_2$)에서는 BaM 상만이 형성되는 것을 알 수 있었다. BaM 박막의 자기적특성을 VSM을 통하여 알아본 결과 산소분압(Po$_2$)이 증가함에 따라 수직보자력은 일정하게 감소를 하였으나 포화자화값은 1 mTorr가지 증가하다 감소하였다. 열처리 시간에 따른 결정화 정도와 특성을 알아본 결과 열처리를 시작한 뒤 10분 이내에 대부분의 특성변화가 일어났으며, 그 이상의 온도에서는 커다란 변화를 일으키지 않음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.888-891
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• 2003

This paper describes on the fabrication and characteristics of micro ceramic thin-film type pressure sensors based on Ta-N strain-gauges for high-temperature applications. The Ta-N thin-film strain-gauges are deposited onto thermally oxidized Si diaphragms by RF sputtering in an argon-nitrogen atmosphere($N_2$ gas ratio: 8 %, annealing condition: $900^{\circ}C$, 1 hr.), Patterned on a wheatstone bridge configuration, and use as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is $1.097{\sim}1.21mV/V.kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS. The fabricated pressure sensor presents a lower TCR, non-linearity than existing Si piezoresistive pressure sensors. The fabricated micro ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that is operable under high-temperature environments.

• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2009년도 춘계 종합학술대회 논문집
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• pp.807-809
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• 2009

압전성을 갖는 산화아연 박막을 스퍼터링을 이용하여 실리콘 기판위에 증착하였고 여러 증착 공정변수들이 물성에 미치는 영향과 박막의 구조적 특성 및 전파경계조건을 고찰하였다. 특히, 평탄한 표면을 갖는 압전 박막을 제조하여 전파 특성에 우수한 증착조건을 제시하고 탄성표면파의 전파및 경계조건을 분석한다. 박막의 구조적 특성 분석을 위하여 여러가지 증착조건 중 아르곤과 산소의 가스비율 과 기판온도가 박막의 제조에 미치는 특성을 분석하였다. 스퍼터링 가스인 산소양이 50%이상으로 증가할수록 박막의 표면 거칠기가 나빠지는 특성을 보였다. 비저항과 표면형상은 유입되는 산소에 큰 영향을 받는다는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제35권7호
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• pp.733-739
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• 1998

C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1218-1221
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• 2004

Bi2212 superconducting thin films fabricated by using the ion Beam Sputtering Method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• 한국세라믹학회지
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• 제49권6호
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.575-578
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• 2000

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.