• 전기화학회지
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• 제14권2호
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• pp.104-109
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• 2011

We fabricated CdSe-sensitized photoelectrochemical solar cell by depositing CdSe nanoparticles on nanoporous $TiO_2$ (np-$TiO_2$) via spray pyrolysis deposition method. By adjusting the amount of CdSe-sensitizer deposited on np-$TiO_2$, we can fabricate an efficient CdSe-sensitized solar cell (${\eta}$ = 3.0% under 1 sun irradiation) in polysulfide liquid electrolyte.

• 한국생산제조학회지
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• 제24권4호
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• pp.469-474
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• 2015

In ultrasonic spray pyrolysis deposition, a precursor solution is evaporated by an ultrasonic atomizer, then gas-carried into a furnace where the solute is separated from the water vapor. After condensation, polymerization, and nucleation, the solute oxide forms a thin film. To improve the deposition efficiency, the ultrasonic atomizer was studied to optimize the evaporated gas flow. The vat cover was redesigned, using three versions with different inlet factors being tested through a computational fluid dynamic analysis as well as a water evaporation experiment. The atomization rate with a hemispherical cover with a $30^{\circ}$ inlet was found to be 2.4 times higher than that with the original. This improvement was verified with fluorine-doped tin oxide spray pyrolysis deposition. The film obtained with the modified vat cover was 2.4 times thicker than that obtained with the original vat cover.

• Progress in Superconductivity
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• 제12권1호
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• 태양에너지
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• 제15권2호
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• pp.91-99
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• 1995

분무열분해법으로 $SnO_2$ 박막을 증착하여 반응변수들이 증착에 미치는 영향을 연구하였다. 분무용액의 농도가 0.01M인 경우 증착온도가 낮을 때에는 증착과정이 표면반응의 지배를 받으며 증착온도가 증가함에 따라 $400^{\circ}C$까지는 물질전달의 지배율이 증가한다. $400^{\circ}C$ 이상에서는 분무압력이 낮을 때는 물질전달의 지배율이 증가한다. $400^{\circ}C$ 이상에서는 분무압력이 낮을 때는 물질전달에 의해, 분무압력이 높을 때는 표면반응에 의해 지배를 받는다. 분무용액의 농도가 증가함에 따라 증착속도는 증가하였으며 본 실험의 경우 Rideal-Eley 기구에 의해 증착반응이 일어났다. 기판의 온도가 증가함에 따라 증착속도는 증가하다가 $400^{\circ}C$ 이상에서는 균일한 핵생성에 의하여 증착속도는 감소하였다. 분무지속 시간에 비례하여 증착층의 두께는 증가하였으며 기판과 증착층간에는 물리적인 접착을 이루고 있다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.67-67
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• 2005

• 센서학회지
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• 제16권4호
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• pp.307-312
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• 2007

The films of Er-doped ZnO (ZnO:Er) were prepared onto MgO wafers by ultrasonic spray pyrolysis at $550^{\circ}C$. The concentration of Er in the deposition source varied from 0.5 wt% to 3.0 wt%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the Er concentration in the films. The films were grown as polycrystalline with a dominant direction of [002]. The grain size of the films were reduced by Er-doping. Er-doping enhanced the ultraviolet emission of ZnO:Er films. The ZnO:Er films prepared with the deposition source of 2.0 wt% Er showed the strongest ultraviolet light emission peak among the films in this study.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.22-25
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• 2022

Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.78-82
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• 2023

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

• 한국재료학회지
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• 제27권8호
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• pp.403-408
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• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• 공업화학
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• 제9권2호
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• pp.214-219
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• 1998

초음파분무 열분해에 의하여 유리 기판 위에 투명전도성 산화주석막을 증착하였다. 증착변수가 산화주석막의 전기저항, 광투과도, 결정구조 및 두께에 미치는 영향을 조사하였다. 증착시간과 염화주석(IV)의 농도가 증가함에 따라, 증착된 산화주석막의 전기저항과 가시선 및 근적외선 영역에서의 광투과도가 감소함을 보여주었다. 공기중에서 열처리온도가 증가하면, 증착된 산화주석막은 전기저항과 광투과도가 증가함을 나타냈다. 본 연구결과는 초음파분무열분해가 단일과정으로서 양질의 투명전도막을 효율적으로 제조할 수 있는 유망한 증착기술임을 암시한다.