• Journal of the Korean Electrochemical Society
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• v.14 no.2
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• pp.104-109
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• 2011

We fabricated CdSe-sensitized photoelectrochemical solar cell by depositing CdSe nanoparticles on nanoporous $TiO_2$ (np-$TiO_2$) via spray pyrolysis deposition method. By adjusting the amount of CdSe-sensitizer deposited on np-$TiO_2$, we can fabricate an efficient CdSe-sensitized solar cell (${\eta}$ = 3.0% under 1 sun irradiation) in polysulfide liquid electrolyte.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.469-474
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• 2015

In ultrasonic spray pyrolysis deposition, a precursor solution is evaporated by an ultrasonic atomizer, then gas-carried into a furnace where the solute is separated from the water vapor. After condensation, polymerization, and nucleation, the solute oxide forms a thin film. To improve the deposition efficiency, the ultrasonic atomizer was studied to optimize the evaporated gas flow. The vat cover was redesigned, using three versions with different inlet factors being tested through a computational fluid dynamic analysis as well as a water evaporation experiment. The atomization rate with a hemispherical cover with a $30^{\circ}$ inlet was found to be 2.4 times higher than that with the original. This improvement was verified with fluorine-doped tin oxide spray pyrolysis deposition. The film obtained with the modified vat cover was 2.4 times thicker than that obtained with the original vat cover.

• Progress in Superconductivity
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• v.12 no.1
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• Solar Energy
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• v.15 no.2
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• pp.91-99
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• 1995

The influence of deposition parameters on the deposition of $SnO_2$ thin films by spray pyrolysis has been studied. In the case of spray solution with tile concentration of 0.01M, at low deposition temperature the deposition was controlled by surface reaction and portion controlled by mass transfer is increased with increasing deposition temperature to $400^{\circ}C$. Above $400^{\circ}C$, the deposition is controlled by mass transfer at low spray pressure, and by surface reaction at high spray pressure. As the concentration of spray solution increased the deposition rate increased, and in this experiment the deposition depends on the Rideal-Eley mechanism. The deposition rate increased with increasing substrate temperature up to $400^{\circ}C$ and then decreased due to homogeneous nucleation. The thickness of the deposit increased with increasing spray duration, and the adhesion between substrate and deposit was formed physically.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.67-67
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• 2005

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.307-312
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• 2007

The films of Er-doped ZnO (ZnO:Er) were prepared onto MgO wafers by ultrasonic spray pyrolysis at $550^{\circ}C$. The concentration of Er in the deposition source varied from 0.5 wt% to 3.0 wt%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the Er concentration in the films. The films were grown as polycrystalline with a dominant direction of [002]. The grain size of the films were reduced by Er-doping. Er-doping enhanced the ultraviolet emission of ZnO:Er films. The ZnO:Er films prepared with the deposition source of 2.0 wt% Er showed the strongest ultraviolet light emission peak among the films in this study.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.22-25
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• 2022

Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.78-82
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• 2023

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.403-408
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• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• Applied Chemistry for Engineering
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• v.9 no.2
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• pp.214-219
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• 1998

The transparent conducting tin oxide films were deposited on g1ass substrates by the ultrasonic spray pyrolysis. Examined were effects of deposition parameters on the electrical resistance, optical transmittance, crystal structure, and thickness of tin oxide films. As both the deposition time and concentration of tin(IV) chloride increase, the deposited tin oxide films exhibited the decrease of electrical resistance and optical transmittance in the visible and near infrared region. With increasing heat-treatment temperature in air, the deposited tin oxide films showed the enhanced electrical resistance and optical transmittance. This study suggests that the ultrasonic spray pyrolysis may be a promising deposition technique effectively to prepare transparent conducting films of good quality in a single step.