• 한국재료학회지
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• 제29권2호
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• pp.87-91
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• 2019

We report on stretchable electrochromic films of poly(3-hexylthiophene) (P3HT) fabricated on silver nanowire (AgNW) electrodes. AgNWs electrodes are prepared on polydimethylsiloxane (PDMS) substrates using a spray coater for stretchable electrochromic applications. On top of the AgNW electrode, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is introduced to ensure a stable resistance over the electrode under broad strain range by effectively suppressing the protrusion of AgNWs from PDMS. This bilayer electrode exhibits a high performance as a stretchable substrate in terms of sheet resistance increment by a factor of 1.6, tensile strain change to 40 %, and stretching cycles to 100 cycles. Furthermore, P3HT film spin-coated on the bilayer electrode shows a stable electrochromic coloration within an applied voltage, with a color contrast of 28.6 %, response time of 4-5 sec, and a coloration efficiency of $91.0cm^2/C$. These findings indicate that AgNWs/PEDOT:PSS bilayer on PDMS substrate electrode is highly suitable for transparent and stretchable electrochromic devices.

• Current Photovoltaic Research
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• 제7권3호
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• pp.55-60
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• 2019

Polymer:nonfullerene solar cells with an inverted-type device structure were fabricated by employing the bulk heterojunction (BHJ) active layers, which are composed of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(6-methyl-2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). The BHJ layers were formed on a pre-patterned indium-tin oxide (ITO)-coated glass substrate by spin-coating using the blend solutions of PBDB-T and IT-M. The solar cell performances were investigated with respect to the cell position on the ITO-glass substrates. In addition, the short-term shelf lifetime of solar cells was tested by storing the PBDB-T:IT-M solar cells in a glovebox filled with inert gas. The results showed that the performance of solar cells was relatively higher for the cells close to the center of substrates, which was maintained even after storage for 24 h. In particular, the PCE of PBDB-T:IT-M solar cells was marginally decreased after storage for 24 h owing to the slightly reduced fill factor, even though the open circuit voltage was unchanged after 24 h.

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.157-160
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• 2019

P(VDF-TrFE-CFE) (Poly (vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)), which exhibits a high electrostriction of about 7%, can transmit tactile output as vibration or displacement. In this study, we investigated the applicability of P(VDF-TrFE-CFE) to wearable piezoelectric actuators. The P(VDF-TrFE-CFE) layers were deposited through spin-coating, and interspaced with patterned Ag electrodes to fabricate a two-layer $3.5mm{\times}3.5mm$ device. This layered structure was designed and fabricated to increase the output and displacement of the actuator at low driving voltages. In addition, a laser vibrometer and piezoelectric force microscope were used to analyze the device's vibration characteristics over the range of ~200~4,200 Hz. The on-off characteristics were confirmed at a frequency of 40 Hz.

• Bulletin of the Korean Chemical Society
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• 제9권6호
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• pp.345-349
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• 1988

The polycrystalline powder of (CaLa) (MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in $H_2/H_2O$ and $N_2$ flowing atmosphere. The powder X-ray diffraction pattern indicates that (CaLa) (MgMo)$O_6$ has a monoclinic perovskite structure with the lattice constants $a_0=b_0=7.901(1){\AA}$, $c =7.875(1){\AA}\;and\;{\gamma}=89^{\circ}$16'(1'), which can be reduced to orthorhombic unit cell, a = 5.551(1) ${\AA}$, b = 5.622(1) ${\AA}$ and c = 7.875(1) ${\AA}$. The infrared spectrum shows two strong absorption bands with their maxima at 590($ν_3$) and 380($ν_4$) cm, which are attributed to $2T_{1u}$ modes indicating the existence of highly charged molybdenum octahedron $MoO_6$ in the crystal lattice. According to the magnetic susceptibility measurement, the compound follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.83(1)$_{{\mu}B}$, which is well consistent with that of spin only value (1.73 $_{\mu}_B$) for $Mo^{5+}$ with $4d^1$-electronic configuration within the limit of experimental error. From the thermogravimetric analysis, it has been confirmed that (CaLa) (MgMo)$O_6$ decomposes gradually into $CaMoO_4,\;MoO_3,\;MgO,\;La_2O_3$ and unidentified phases due to the oxidation of $Mo^{5+}$ to $Mo^{6+}$.

• Current Applied Physics
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• 제18권12호
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• pp.1605-1608
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• 2018

$Gd_{1-x}Ho_xNi$ melt-spun ribbons were fabricated by a single-roller melt spinning method. All the compounds crystallize in an orthorhombic CrB-type structure. The Curie temperature ($T_C$) was tuned between 46 and 99 K by varying the concentration of Gd and Ho. A spin reorientation (SRO) transition is observed around 13 K. Different from $T_C$, the SRO transition temperature is almost invariable for all compounds. Two peaks of magnetic entropy change (${\Delta}S_M$) were found. One at the higher temperature range was originated from the paramagnet-ferromagnet phase transition and the other at the lower temperature range was caused by the SRO transition. The maximum of ${\Delta}S_M$ around $T_C$ is almost same. The other maximum of ${\Delta}S_M$ around SRO transition, however, had significantly positive relationship with x. It reached a maximum about $8.2J\;kg^{-1}\;K^{-1}$ for x = 0.8. Thus double large ${\Delta}S_M$ peaks were obtained in $Gd_{1-x}Ho_xNi$ melt-spun ribbons with the high Ho concentration. And the refrigerant capacity power reached a maximum of $622J\;kg^{-1}$ for x = 0.6. $Gd_{1-x}Ho_xNi$ ribbons could be good candidate for magnetic refrigerant working in the low temperature especially near the liquid nitrogen temperature range.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.121-127
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• 2022

마이크로 LED는 크기가 100 ㎛ 이하인 LED 소자로 기존 LED에 비해 해상도, 밝기 등 여러 면에서 우수한 성능을 보일 뿐 아니라 유연 디스플레이, VR/AR 등 다양한 분야에 적용이 가능하다. 마이크로 LED 디스플레이를 제작하기 위해선 LED 웨이퍼로부터 최종기판으로 마이크로 LED를 옮기는 전사 공정이 필수적이며, 본 연구에서는 진공 척을 이용하여 마이크로 LED를 고속 대량 전사하는 방식을 제안하고 이를 검증하였다. MEMS 기술을 이용한 PDMS 마이크로 몰딩 공정을 통해 진공 척을 제작하였으며, PDMS 몰딩 공정을 제어하기 위해 댐 구조를 이용한 스핀 코팅 공정을 성공적으로 적용하였다. 솔더볼을 이용한 진공 척 구동 실험을 통해 진공 척을 이용한 마이크로 LED의 대량 전사 가능성을 확인하였다.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• 한국자기학회지
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• 제7권2호
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• pp.90-96
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• 1997

ThM $n_{12}$ 구조를 갖는 NdF $e_{10.7}$ $Ti_{1.2}$M $o_{0.1}$의 미세구조 및 자기적 성질을 Mossbauer 분광법과 X-선 회절 분석 그리고 VSM으로 연구하였다. NdF $e_{10.7}$ $Ti_{1.2}$M $o_{0.1}$ 합금은 알곤 가스 분위기의 아크 ㅇ용해로에서 제조하였으며, X-선 회절 분석 결과 결정구조는 상온에서 tetragonal 구조를 갖고 있으며, 격자상수는 $a_{0}$ = 8.637 .angs. , $c_{0}$ = 4.807 .angs. 으로 결정하였다. Mossbauer spectrum을 13 K에서 800 K 까지 취하였으며, Curie 온도는 600 K로 결정하였다. Mossbauer spectrum 분석은 Curie 온도 이하의 온도에서는 Fe-site가 (8 $i_{1}$, 8 $i_{2}$, 8 $j_{2}$, 8 $j_{1}$, 8f)의 5 site로 나타났으며, 400 K 근처에서 .alpha. -Fe 상이 나타나기 시작하여 온도가 증가함에 따라서 점진적으로 증가하여 Curie 온도에서 20.7%의 .alpha. -Fe 상이 존재함을 알았다. 각 site에서의 초미세 자기장은 온도가 증가함에 따라 감소하였으며, 그 크기는 $H_{hf}$(8i)> $H_{hf}$(8j)> $H_{hf}$(8f) 임을 알았고 spin파 여기에 의한 T/ $T_{c}$<0.7 이하에서의 평균 초미세 자기장 $H_{hf}$(T)의 변화는 [ $H_{hf}$(T)- $H_{hf}$(0)]/ $H_{hf}$(0)=-0.34(T/ $T_{c}$)$^{3}$2/-0.14(T/ $T_{c}$)$^{5}$ 2/로 나타났다. 또한 원자간 결합력을 알 수 있는 Debye 온도는 .THETA. = 340 .+-. 5 K로 나타났다.ETA. = 340 .+-. 5 K로 나타났다.

• 한국결정성장학회지
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• 제10권3호
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• pp.189-198
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• 2000

수평전기로에서 $CuGaSe_2$다결정을 합성하여 HWE(Hot Wall Epitaxy) 방법으로 $CuGaSe_2$단결정 박막을 반절연 성 GaAs(100)기판 위에 성장하였다. $CuGaSe_2$단결정박막은 증발원의 온도를 $610^{\circ}C$, 기판의 온도를 $450^{\circ}C$로 성장하였다. 이때 성장된 단결정 박막의 두께는 2.1$\mu\textrm{m}$였다. 단결정 박막의 결정성의 조사에서 20K에서 광발광(photoluminescence) 스펙트럼이 672.6nm(1.8432 eV)에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 138 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $4.87{\times}10^{23}$ electron/$m^{23}$ , $1.29{\times}10^{-2}$$\m^2$/v-s였다. $CuGaSe_2$ 단결정 박막의 광전류 단파장대 봉우리들로부터 20K에서 측정된 $\Delta$Cr(crystal field splitting)은 약 0.0900 eV $\Delta$So(spin orbit coupling)는0.2493 eV였다. 20K에서 광발광 봉우리의 667.6nm(1.8571 eV)는 free exciton($E_x$), 672.6nm(1.8432 eV)는 acceptor-bound exciton 인 $I_2$와 679.3nm(1.8251 eV)는 donor-bound exciton인 $I_1$였다. 또한 690.9nm(1.7945 eV)는 donor-acceptor pair(DAP) 발광 $P_0$이고 702.4nm(1.7651 eV)는 DAP-replica $P_1$, 715.0nm(1.7340 eV)는 DAP-replica $P_2$, 728.9nm(1.7009 eV)는 DAP-replica $P_3$, 741.9nm(1.6711 eV)는 DAP-replica $P_4$로 고찰된다. 912.4nm(1.3589 eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.