• 전자통신동향분석
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• 제17권6호통권78호
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• pp.127-134
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• 2002

정보통신 연구개발 사업인 우수신기술 지정 ·지원사업에 참여한 벤처기업 중 초기단계 벤처기업 75개사를 대상으로 대기업 및 중소기업으로부터 spin-off한 배태조직 벤처기업과 개인창업 벤처기업으로 분류하여 업종 및 벤처확인 유형별 특성, 재무 및 조직현황 특성, 최고경영자 특성, 기술개발 특성, 해외진출 특성을 분석하여 두 그룹간의 차이점 및 공통점을 파악한 후 향후 벤처기업의 나아갈 방향에 대해 제시해 보았다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.188-189
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• 2002

One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1789-1791
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• 2007

We fabricated OTFT-OLED display panel by using Ag-paste for source and drains electrode of OTFTs. The OTFTs were fabricated by solution processes such as spin-coating for PVP gate dielectric and screen printing for S/D electrodes with Ag-paste, except pentacene active layer which was deposited by evaporation. The mobility was 0.024 cm2/V.sec , off state current ${\sim}10-11A$, threshold voltage 7.6 V and on/off current ratio ${\sim}105$. The panel consisted of 16 x 16 pixels and each pixel consisted of 2 OTFTs, 1 Capacitor and 1 OLED. The pixels successfully worked in terms of current magnitude supplied to OLED and the control ability of driving and switching OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1150-1153
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• 2006

In this paper, we investigated the effect of solvent on electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs). The TIPS pentacene was spin coated by using chlorobenzene, p-xylene, chloroform and toluene as solvent. Fabricated OTFT with chlorobenzene showed field-effect mobility of $0.01\;cm^2/V{\cdot}s$, on/off ratio $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform the mobility was $5.8{\times}10^{-7}\;cm^2/Vs$, on/off ratio $1.1{\times}10^2$ and threshold voltage of 1.7 V.

• 한국국방경영분석학회지
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• 제32권1호
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• pp.1-12
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• 2006

본 연구는 전문가 설문기법으로 한국 군사기술의 상용이전에 영향을 미치는 주요한 요인들을 조사 분석하였다. 국방연구개발 투자의 효과로서 필요한 군사과학기술 개발과 더불어 군에서 민간부문으로의 기술이전을 통한 상용기술개발을 촉진하는 역할도 중요하게 여겨지고 있다. 군사선진국들은 국방기술개발에 대한 효과적이고 효율적인 투자의 중요성을 인식하고 자국의 특성을 고려하여 국가수준에서 연구개발투자의 효과를 극대화할 수 있는 최적의 기술이전 메커니즘을 적용하기 위해 노력하고 있다. 기술이전 메커니즘은 국가마다 다양하며 한국에서 효과적이고 효율적인 기술이전을 위한 영향요인은 무엇인지를 알아보는 것이 필요하다. 본 논문은 전문가 면담과 문헌연구를 통하여 고려대상 영향요인 19개를 식별하였으며 이중 11개가 기술이전활동에 유의한 영향을 미치는 것으로 나타났다. 정책적 함의로서 목표 지향적 투자, 기술이전 관련 규정의 검토, 그리고 기술이전 전문가 양성에 대한 필요성을 제기하고 있다.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 디지털융복합연구
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• 제19권8호
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• pp.173-184
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• 2021

현대 조직에서 고위급 임원들의 이직이 점차 증가하고 있음에도, 대부분의 기존 연구들에서는 임원들의 비자발적 이직/퇴직의 함의에 대한 연구에 치중해있는 실정이다. 본 연구에서는 기존 연구의 한계를 탈피하기 위해, 조직원 이동과 창업자 연구에 기반하여 임원들의 자발적 이직에 관한 이론적 모형을 제언한다. 첫째, 최고경영자로 창업자가 된 경우 기존 기업에 부정적 영향을 줄 것이나, 두 기업이 협력적 관계가 형성될수록 부정적 관계는 줄어들 것이다. 둘째, 스핀오프의 경우 기존 기업에 긍정적 영향을 줄 것이나, 스핀오프 기업의 성과가 저조할수록 긍정적 관계는 약화될 것이다. 마지막으로, 경쟁사로 이직하는 경우에는 부정적, 협력사로 이직하는 경우에는 긍정적 영향을 기존 기업의 성과에 줄 것이다. 본 연구에서는 임원들의 자발적 이직이 기존 기업의 성과에 미치는 영향력이 임원들의 향후 활동 양태에 따라 달라질 것이라 주장한다.

• Journal of Magnetics
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• 제11권1호
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• pp.8-11
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• 2006

Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.