• Title/Summary/Keyword: spin transfer

Search Result 214, Processing Time 0.027 seconds

A New Model for the Reduced Form of Purple Acid Phosphatase: Structure and Properties of $[Fe_2BPLMP(OAc)_2](BPh_4)_2$

  • 임선화;이진호;이강봉;강성주;허남휘;Jang, Ho G.
    • Bulletin of the Korean Chemical Society
    • /
    • v.19 no.6
    • /
    • pp.654-660
    • /
    • 1998
  • $[Fe^{II}Fe^{III}BPLMP(OAc)_2](BPh_4)_2$ (1), a new model for the reduced form of the purple acid phosphatases, has been synthesized by using a dinucleating ligand, 2,6-bis[((2-pyridylmethyl)(6-methyl-2-pyridylmethyl)amino) methyl]-4-methylphenol (HBPLMP). Complex I has been characterized by X-ray diffraction method as having (μ-phenoxo)bis(acetato)diiron core. Complex 1 was crystallized in the monoclinic space group C2/c with the following cell parameters: a=41.620(6) Å, b=14.020(3) Å, c=27.007(4) Å, β=90.60(2)°, and Z=8. The iron centers in the complex 1 are ordered as indicated by the difference in the Fe-O bond lengths which match well with typical $Fe^{III}-O\; and\; Fe^{II}-O$ bond lengths. Complex 1 has been studied by electronic spectral, NMR, EPR, SQUID, and electochemical methods. Complex 1 exhibits strong bands at 592 nm, 1380 nm in $CH_3CN$ (ε = 1.0 × 103 , 3.0 × 102). These are assigned to $phenolate-to-Fe^{III}$ and intervalence charge-transfer transitions, respectively. Its NMR spectrum exhibits sharp isotropically shifted resonances, which number half of those expected for a valence-trapped species, indicating that electron transfer between $Fe^{II}\;and\;Fe^{III}$ centers is faster than NMR time scale. This complex undergoes quasireversible one-electron redox processes. The $Fe^{III}_2/Fe^{II}Fe^{III}\;and\;Fe^{II}Fe^{III}/Fe^{II}_2$ redox couples are at 0.655 and -0.085 V vs SCE, respectively. It has $K_{comp}=3.3{\times}10^{12}$ representing that BPLMP/bis(acetate) ligand combination stabilizes a mixed-valence $Fe^{II}Fe^{III}$ complex in the air. Complex 1 exhibits a broad EPR signal centered near g=1.55 which is a characteristic feature of the antiferromagnetically coupled high-spin $Fe^{II}Fe^{III}$ system $(S_{total}=1/2)$. This is consistent with the magnetic susceptibility study showing the weak antiferromagnetic coupling $(J= - 4.6\;cm^{-1},\; H= - 2JS_1{\cdot}S2)$ between $Fe^{II}\; and \;Fe^{III}$center.

Added Value of Chemical Exchange-Dependent Saturation Transfer MRI for the Diagnosis of Dementia

  • Jang-Hoon Oh;Bo Guem Choi;Hak Young Rhee;Jin San Lee;Kyung Mi Lee;Soonchan Park;Ah Rang Cho;Chang-Woo Ryu;Key Chung Park;Eui Jong Kim;Geon-Ho Jahng
    • Korean Journal of Radiology
    • /
    • v.22 no.5
    • /
    • pp.770-781
    • /
    • 2021
  • Objective: Chemical exchange-dependent saturation transfer (CEST) MRI is sensitive for detecting solid-like proteins and may detect changes in the levels of mobile proteins and peptides in tissues. The objective of this study was to evaluate the characteristics of chemical exchange proton pools using the CEST MRI technique in patients with dementia. Materials and Methods: Our institutional review board approved this cross-sectional prospective study and informed consent was obtained from all participants. This study included 41 subjects (19 with dementia and 22 without dementia). Complete CEST data of the brain were obtained using a three-dimensional gradient and spin-echo sequence to map CEST indices, such as amide, amine, hydroxyl, and magnetization transfer ratio asymmetry (MTRasym) values, using six-pool Lorentzian fitting. Statistical analyses of CEST indices were performed to evaluate group comparisons, their correlations with gray matter volume (GMV) and Mini-Mental State Examination (MMSE) scores, and receiver operating characteristic (ROC) curves. Results: Amine signals (0.029 for non-dementia, 0.046 for dementia, p = 0.011 at hippocampus) and MTRasym values at 3 ppm (0.748 for non-dementia, 1.138 for dementia, p = 0.022 at hippocampus), and 3.5 ppm (0.463 for non-dementia, 0.875 for dementia, p = 0.029 at hippocampus) were significantly higher in the dementia group than in the non-dementia group. Most CEST indices were not significantly correlated with GMV; however, except amide, most indices were significantly correlated with the MMSE scores. The classification power of most CEST indices was lower than that of GMV but adding one of the CEST indices in GMV improved the classification between the subject groups. The largest improvement was seen in the MTRasym values at 2 ppm in the anterior cingulate (area under the ROC curve = 0.981), with a sensitivity of 100 and a specificity of 90.91. Conclusion: CEST MRI potentially allows noninvasive image alterations in the Alzheimer's disease brain without injecting isotopes for monitoring different disease states and may provide a new imaging biomarker in the future.

Fabrication of Flexible Solid-state Dye-sensitized $TiO_2$ Nanotube Solar Cell Using UV-curable NOA

  • Park, Ik-Jae;Park, Sang-Baek;Kim, Ju-Seong;Jin, Gyeong-Seok;Hong, Guk-Seon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.396-396
    • /
    • 2012
  • $TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

  • PDF

Supercapacitive properties of nickel sulfide coated titanium dioxide nanoparticles

  • Gang, Jin-Hyeon;Ryu, Il-Hwan;Hong, Da-Jeong;Kim, Geu-Rin;Im, Sang-Gyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.156.1-156.1
    • /
    • 2016
  • Nickel sulfide (NiS) is one of the most promising candidates as an electrode material for supercapacitors due to its good capacitive properties, high electrical conductivity and low cost. In addition to the development of the new electrode materials, nanostructuring the electrode surface is one of the main issues in enhancing the capacitive performance of the supercapacitors because the increased surface area can improve the charge transfer and energy storage processes occurring at the electrode surface. However, most nanofabrication techniques require complicated and delicate nanoprocesses, and hence are not suitable for practical use. In this work, we developed a simple method to fabricate nanostructured NiS electrodes by depositing NiS onto $TiO_2$ nanoparticles. First, $TiO_2$ nanoparticles were spin-coated on a fluorine-doped tin oxide (FTO) substrate, and then NiS layers were deposited onto the $TiO_2$ nanoparticles by consecutive dip-coatings in the solutions containing nickel and sulfur precursors. This nanostructured NiS electrode showed significantly improved capacitive properties compared to the electrode of NiS films deposited without $TiO_2$ nanoparticles. The asymmetric full-cell supercapacitor with this nanostructured NiS electrode and activated carbon electrode was also fabricated and investigated.

  • PDF

Kinematic properties of the Ursa Major Cluster

  • Kim, YoungKwang;Lee, Young Sun;Beers, Timothy C.
    • The Bulletin of The Korean Astronomical Society
    • /
    • v.40 no.2
    • /
    • pp.30.3-31
    • /
    • 2015
  • We present a kinematic analysis of 172 likely member galaxies of the Ursa Major Cluster. In order to understand the dynamical state of the cluster, we investigate the correlation of the cluster morphology with rotation, the velocity dispersion profile, and the rotation amplitude parallel to the global rotation direction. Both the minor axis and the rotation are very well-aligned with the global rotation axis in the outer region at half radius (> 0.5 $R_{max}$), but not in the inner region. The cluster exhibits low velocity dispersion and rotation amplitude profiles in the inner region, but higher in the outer. Both profiles exhibit outwardly increasing trends, suggesting an inside-out transfer of angular momentum of dark matter via violent relaxation, as revealed by a recent off-axis major-merging simulation. From Dressler-Schectman plots in the plane of galactic positions, and velocity versus position angle of galaxy, we are able to divide the Ursa Major Cluster into two substructures: Ursa Major South (UMS) and Ursa Major North (UMN). We derive a mass of $3.2{\times}10^{14}M_{\odot}$ for the cluster through the two-body analysis by the timing argument with the distance information (37 for UMN and 36 for UMS) and the spin parameter of ${\lambda}=0.049$. The two substructures appear to have passed each other 4.4 Gyr ago and are moving away to the maximum separation.

  • PDF

UV-Nanoimprint Lithography Using Fluorine Doped Diamond-Like Carbon Stamp (불화 함유 다이아몬드 상 탄소 스탬프를 사용하는 UV 나노 임프린트 리소그래피)

  • Jeong, Jun-Ho;Ozhan, Altun Ali;Rha, Jong-Joo;Choi, Dae-Geun;Kim, Ki-Don;Choi, Jun-Hyuk;Lee, Eung-Sug
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2006.05a
    • /
    • pp.109-112
    • /
    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

  • PDF

Technology of the next generation low power memory system

  • Cho, Doosan
    • International Journal of Internet, Broadcasting and Communication
    • /
    • v.10 no.4
    • /
    • pp.6-11
    • /
    • 2018
  • As embedded memory technology evolves, the traditional Static Random Access Memory (SRAM) technology has reached the end of development. For deepening the manufacturing process technology, the next generation memory technology is highly required because of the exponentially increasing leakage current of SRAM. Non-volatile memories such as STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory), PCM (Phase Change Memory) are good candidates for replacing SRAM technology in embedded memory systems. They have many advanced characteristics in the perspective of power consumption, leakage power, size (density) and latency. Nonetheless, nonvolatile memories have two major problems that hinder their use it the next-generation memory. First, the lifetime of the nonvolatile memory cell is limited by the number of write operations. Next, the write operation consumes more latency and power than the same size of the read operation.These disadvantages can be solved using the compiler. The disadvantage of non-volatile memory is in write operations. Therefore, when the compiler decides the layout of the data, it is solved by optimizing the write operation to allocate a lot of data to the SRAM. This study provides insights into how these compiler and architectural designs can be developed.

Chinese Policy to Stimulate University-Industry Linkages in Nanjing

  • Su, De-Jin;Sohn, Dong-Won;Sohn, Sunwoo
    • STI Policy Review
    • /
    • v.4 no.2
    • /
    • pp.74-95
    • /
    • 2013
  • Rapid changes in the economic, social and academic environments often provide opportunities to develop new and advanced technologies. In China, recent literature on the role of universities suggests that university-industry linkages (UILs) play a substantial role in the development of high-tech industries. Since 1979 when the country became more open and underwent economic reform, Chinese central authorities, local governments, and universities have continued to set up various science and technology (S&T) policies to stimulate UILs, contributing to China's technological progress and economic growth. This study examines the role of S&T policies on UILs such as transfer of technology, joint research, and spin-off creation with a particular focus on Nanjing University (NJU) in Jiangsu Province. Nanjing has over 53 universities, ranking it behind Beijing and Shanghai in terms of S&T and higher education opportunities. By adopting "institutional methodology," this study contends that UILs not only benefit universities and industry but also society in terms of job training, consulting activities, joint research, R&D results commercialization, patent licensing, new business creation, and other aspects. Finally, we suggest that the Chinese experience, though with some problems, might enhance our understanding of how to stimulate UILs through the arrangement of various S&T policies.

An Efficient Variable Rearrangement Technique for STT-RAM Based Hybrid Caches

  • Youn, Jonghee M.;Cho, Doosan
    • IEMEK Journal of Embedded Systems and Applications
    • /
    • v.11 no.2
    • /
    • pp.67-78
    • /
    • 2016
  • The emerging Spin-Transfer Torque RAM (STT-RAM) is a promising component that can be used to improve the efficiency as a result of its high storage density and low leakage power. However, the state-of-the-art STT-RAM is not ready to replace SRAM technology due to the negative effect of its write operations. The write operations require longer latency and more power than the same operations in SRAM. Therefore, a hybrid cache with SRAM and STT-RAM technologies is proposed to obtain the benefits of STT-RAM while minimizing its negative effects by using SRAM. To efficiently use of the hybrid cache, it is important to place write intensive data onto the cache. Such data should be placed on SRAM to minimize the negative effect. Thus, we propose a technique that optimizes placement of data in main memory. It drives the proper combination of advantages and disadvantages for SRAM and STT-RAM in the hybrid cache. As a result of the proposed technique, write intensive data are loaded to SRAM and read intensive data are loaded to STT-RAM. In addition, our technique also optimizes temporal locality to minimize conflict misses. Therefore, it improves performance and energy consumption of the hybrid cache architecture in a certain range.

Fabrication of Fluorine Doped Diamond-Like Carbon Stamp for UV-Nanoimprint Lithography (UV 나노임프린트 리소그래피를 위한 불화 함유 다이아몬드 상 탄소 스탬프의 제작)

  • Ozhan Altun Ali;Jeong Jun-Ho;Rha Jong-Joo;Choi Dae-Geun;Kim Ki-Don;Lee Eung-Sug
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2006.05a
    • /
    • pp.145-146
    • /
    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

  • PDF