• 한국광학회지
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• 제7권4호
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• pp.357-362
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• 1996

스핀 코팅으로 제작한 MNA/PMMA 고분자박막의 두께 및 굴절율과 소광계수를 결정하였다. 타원해석 스펙트럼을 분석하여 박막의 두께 및 투과영역에서의 굴절율을 결정하고 광흡수 스펙트럼으로부터 흡수영역에서의 소광계수 스펙트럼을 역방계산하였다. 이 소광계수 스펙트럼을 가장 잘 나타내는 고전적 Lorentz 진동자 상수들과 양자역학적 진동자 상수들을 각각 구하고 이들 진동자에 의한 복소굴절율 스펙트럼들을 비교하였다. 이 방법은 대부분의 고분자박막의 두께 및 굴절율과 소광계수 스펙트럼을 구하는데 적용될 수 있으며 고분자박막의 광학적 특성을 규정짓는데 매우 유용하게 사용될 수 있겠다.

• 한국진공학회지
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• 제12권S1호
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• pp.7-9
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• 2003

Solid-state reactions in Ni/Si multilayered films (MLF) with an overall stoichiometry of $Ni_2Si$, NiSi and $NiSi_2$, induced by ion-beam mixing (IBM) and thermal annealing, were studied by using spectroscopic ellipsometry and magneto-optical spectroscopy as well as x-ray diffraction (XRD). The mixing was performed with Ar+ ions of an energy of 80 keV and a dose of $1.5 x\times10^{16}$ $Ar^+$/$\textrm{cm}^2$. It was shown that the IBM induces structural changes in the Ni/Si MLF, which cannot be detected by XRD but are confidently recognized by the optical method. A thermal annealing at 673 K of the Ni/Si MLF with an overall stoichiometry of NiSi and $NiSi_2$ causes formation of the first η -NiSi phase. The first trace for $NiSi_2$ phase on the background of NiSi one was detected by XRD after an annealing at 1073 K while, according to the optical results, $NiSi_2$ turns out be the dominant phase for the annealed Ni/Si MLF with an overall stoichiometry of $NiSi_2$.

• 마이크로전자및패키징학회지
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• 제7권1호
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• pp.35-40
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• 2000

Teflon-like fluorocarbon thin film was deposited on various substrates by vapor deposition using PFDA (perfluorodecanoic acid). The fluorocarbon films were characterized by static/dynamic contact angle analysis, VASE (Variable-angle Spectroscopic Ellipsometry) and AFM/LFM (Atomic/Lateral Force Microscopy). Based on Lewis Acid/Base theory, the surface energy ($S_{E}$) of the films was calculated by the static contact angle measurement. The work of adhesion (WA) between de-ionized water and substrates was calculated by using the static contact data. The fluorocarbon films showed very similar values of the surface energy and work of adhesion to Teflon. All films showed larger hysteresis than that of Teflon. The roughness and relative friction force of films were measured by AFM and LFM. Even though the small reduction of surface roughness was found on film on $SiO_2$surface, the large reduction of relative friction farce was observed on all films. Especially the relative friction force on TEOS was decreased a quarter after film deposition. LFM images showed the formation of "strand-like"spheres on films that might be the reason far the large contact angle hysteresis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• 한국표면공학회지
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• 제29권6호
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• pp.788-796
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• 1996

$TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.

• 한국표면공학회지
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• 제44권6호
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• pp.264-268
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• 2011

The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

• 한국광학회지
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• 제22권4호
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• pp.170-178
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• 2011

기층의 후면에서 반사한 빛이 미치는 영향을 고려하여 반투명한 기층 위에 박막이 있는 시료의 분광타원상수를 모델링 분석하였다. 후면반사가 타원상수에 미치는 영향을 기층의 복소굴절률과 두께를 사용하여 나타내었고 이를 모델링 분석에 적용하였다. 유리 기층 위에 ITO 박막이 있는 시료에 대해 후면반사를 고려한 표현들을 사용하여 박막의 두께와 복소굴절률 등을 구한 결과가 후면에서 반사된 빛을 제거하여 측정, 분석하는 통상적인 타원법에 의한 결과와 일치함을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.326-326
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• 2013

본 연구에서는 회전 원통형 마그네트론 스퍼터링 시스템(Cylindrical Magnetron Sputtering)을 이용하여 성막한 Sn-doped $In_2O_3$ (ITO) 투명전극의 두께 변화에 따른 전기적, 광학적, 구조적 특성을 연구하였다. 회전 원통형 마그네트론 스퍼터링 시스템을 이용한 ITO 투명전극은 박막의 두께가 50~1,000 nm의 두께로 증가함에 따라 비저항 값은 일정하게 유지되나 면저항 값이 $37.8{\Omega}$/square로부터 $1.5{\Omega}$/square로 점차적으로 감소됨을 확인할 수 있었다. 또한 ITO 박막의 두께 증가가 50 nm에서 1,000 nm로 증가함에 따라 400~800nm 파장 범위에서 71~83％의 높은 광투과도를 나타내었다. 두께 변화에 따른 광학적 특성 변화를 설명하기 위해 Spectroscopic ellipsometry 분석을 실시하였으며 이를 기반으로 박막 두께와 투과도의 상관관계를 설명하였다. 한편, 원통형 마그네트론 스퍼터로 성장시킨 ITO 박막은 두께가 50~200 nm의 범위에서는 (222) 방향으로 우월 성장하였으나, 200-1000 nm 두께 범위에서는 우월 성장방향이 (400)과 (622)로 바뀜을 X-ray diffraction (XRD) 분석을 통하여 확인하였다. 이를 통해 박막의 두께변화에 따른 전기적/광학적 특성의 변화는 박막의 구조와 매우 밀접한 상관관계가 있음을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.225-227
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• 1994

The second-order nonlinear optical effect, especially the second harmonic generation, in Langmuir-Blodgett(LB) films have get much attention over the past few years. For second harmonic generation(SHG) of the ultrathin organic films, the multilayer structure of the film should have the noncentrosymmetric arrangements of molecules. The Langmuir-Blodgett technique can result in the production of thin films of precisely controlled dimensions and structure. In this paper, n-octadecyl 4-(4'-nitrophenylazo)-1-naphthyl ether, ONNE(azohenzene derivative), was synthesized and the optical properties of ONNE was studied. Nonccntrosymmctric Z-type LB films of ONNE were prepared and SHG intensity of the film were measured. The structural characteristics of floating monolayer(L film) and LB film of ONNE were discussed with $\pi$-A isotherm. UV-visible absorption spectroscopy and spectroscopic ellipsometry. The polarized UV-visible absorption spectroscopy and SHO intensity suggest the molecular orientation in LB film.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.78-84
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• 1998

ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.