• Title/Summary/Keyword: spectroscope

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Development of One-channel Gamma ray spectroscope for Automatic Radiopharmaceutical Synthesis System (방사성 의약품 자동합성장치용 단채널 감마선 분광기 보드의 설계 및 제작)

  • Song, Kwanhoon;Kim, Kwangsoo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.4
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    • pp.193-200
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    • 2014
  • In this paper, the prototype of one-channel gamma-ray spectroscope for automatic radiopharmaceutical systhesis system was designed and characterized. The prototype employed CZT (CdZnTe) spear detector for gamma-ray detection and employed analog-type signal processing method. A radioactive sample Co-60 was used for measuring performance of the gamma-ray spectroscope and energy spectrum is gained with bandwidth of 1173keV. The analog board is made up of SF (shaping filter) and PHA (peak and hold amplifier) for shaping CZT output signal appropriately and ADC (analog to digital converter) and FPGA (field programmable gate array) for drawing gamma-ray spectrum by counting the digitalized gamma-ray signal data.

A Study on the Fabrication and Detection of Cd$_{80}$ Zn$_{20}$Te Gamma-ray detector with MIM Structure (Cd$_{80}$ Zn$_{20}$Te를 사용한 MIM 구조의 감마선 탐지 소자 제작 및 탐지 특성에 관한 연구)

  • 최명진;왕진석
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.4
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    • pp.47-53
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    • 1997
  • We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

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Microstructural Control of Pyrolytic Carbon Layer Deposited from Methane by Isotropic Chemical Vapor Infiltration

  • Jeong, Young-Seok;Choi, Kyoon;Yoo, Ho Gyu
    • Journal of the Korean Ceramic Society
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    • v.56 no.3
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    • pp.291-297
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    • 2019
  • Pyrolytic carbon (PyC) layers were deposited using methane. The PyC layer deposited with 5% methane showed highly textured graphite, while that deposited using 100% methane showed low textured graphite. The degrees of anisotropy of the carbon layers were measured using an X-ray diffractometer, a transmission electron microscope, and a Raman spectroscope, and the results were compared with those reported previously. The orientation angles obtained from the fast Fourier transformation of the high-resolution transmission electron microscopy images and the ID/IG intensity ratios obtained from the Raman spectra were used to evaluate the anisotropy of the PyC layers.

Measurement of Radiation Intensity of the High-Pressure and Large-Current Arc (고압 대전류 아크의 복사강도 측정)

  • Song, Ki-Dong;Oh, Yeon-Ho;Chong, Jin-Kyo;Cho, Yong-Sung
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.55 no.11
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    • pp.555-563
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    • 2006
  • This paper presents the measured radiation intensity of high-pressure and large-current arc with the current. In order to measure the radiation intensity of large-current arc, a model circuit breaker was specially designed and manufactured and the method using an astronomical telescope was utilized after various measuring methods were investigated. A trigger system was designed and fabricated to coincide the time of desired current with the exposure time of 1ms of the spectroscope. A high-speed camera was used to investigate the shape and behavior of the arc and the captured results have been used to calculate the radiation energy. The calculated arc temperature with Boltzmann plot method using the measured radiation intensity have $18,000{\sim}27,000K$ to the current $4kA{\sim}15kA$. And also, using the calculated arc temperature and the captured arc shape the radiation energy of the current $5kA{\sim}15kA$ were calculated with $8{\times}10^5{\sim}4.0{\times}10^6W/m$ respectively.

The Characteristics of Plasma Polymerized Carbon Hardmask Film Prepared by Plasma Deposition Systems with the Variation of Temperature

  • Yang, J.;Ban, W.;Kim, S.;Kim, J.;Park, K.;Hur, G.;Jung, D.;Lee, J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.381.1-381.1
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    • 2014
  • In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

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Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD) (MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착)

  • Yoon, Su-Jong;Kim, Tae-Gyu
    • Journal of the Korean institute of surface engineering
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    • v.41 no.2
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    • pp.43-47
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    • 2008
  • Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

A Study of Copper Electroless Deposition on Tungsten Substrate (텅스텐 기판 위에 구리 무전해 도금에 대한 연구)

  • Kim, Young-Soon;Shin, Jiho;Kim, Hyung-Il;Cho, Joong-Hee;Seo, Hyung-Ki;Kim, Gil-Sung;Shin, Hyung-Shik
    • Korean Chemical Engineering Research
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    • v.43 no.4
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    • pp.495-502
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    • 2005
  • Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

Defect evaluation of Fe metallic contamination in silicon wafers (Si 웨이퍼의 내부 금속 불순물 Fe의 결함분석)

  • 오민환;남효덕;김흥락;김동수;김영덕;김광일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.578-581
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    • 2001
  • Silicon wafers using DRAM devices required for high cleaning technology and this cleaning technology was evaluated by defect level or electron life time. This paper examined the correlation of SPV(Surface Photo Voltaic Analyzer) which analyzes diffusion length of minority carriers and DLTS(Deep level Transient Spectroscope) which analyzes defect level.

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Synthesis of diamond thin films by R.F plasma CVD (RF플라즈마 CVD법에 의한 Diamond합성)

  • Park, Sang-Hyun;Lee, Deok-Chool
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.149-150
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    • 1989
  • Diamond thin films were synthesised from the mixed gases of $CH_4$ and $H_2$ on silicon substrate by R.F plasma CVD and films deposited were investigated by SEM. XRD and Raman spectroscope. From these result, cubo-octahedral diamond particles were synthesised under the following condition: methane concentration. 1.0vol% ; pressure of reactor, 0.3torr ; R.F power, 500W ; reaction time, 20hr.

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ON THE BONE TISSUE REACTION TO IMPLANTS WITH DIFFERENT SURFACE TREATMENT METHODS (임플랜트 표면 처리 방법에 따른 골조직 반응에 대한 연구)

  • Kim, Yong-Jae;Cho, In-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.1
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    • pp.71-84
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    • 2007
  • Statement of problem: Implant surface characteristics plays an important role in clinical success and many studies have been made for improvement of success by changing surface roughness. Purpose: Appropriate increase of surface roughness increases the activity of osteoblast and enhance contact and retention between bone and implant. Material and method- Machined, SLA and RBM surface implants, which are the most commonly used implants were implanted into the tibia of rabbits and after 1 week, 4 weeks, 8 weeks and 12 weeks there were histologic and histomorphometric analysis and study for bone gradient and change of Ca/P ratio using EDS(Energy Dispersive X-ray Spectroscope). Results: Comparison of bone-implant contact showed no significant difference among each implant. In comparison of bone area rates, SLA showed higher value with significant difference at 1 week and 4 weeks, and SLA and RBM at 8 weeks than Machined implant (p<0.05). In analysis of bone constituents with EDS, titanium was specifically detected in new bones and the rates were constant by surface treatment method or period. In case of Ca/P ratio, according to surface treatment method, each group showed significant difference. Lots of old bone fragments produced during implantation remained on the rough surface of RBM implant surface and each group showed histological finding with active synthesis of collagen fibers until 12 weeks. In transmission electronic microscopic examination of sample slice after elapse of twelve weeks, tens nm of borderline (lamina limitans like dense line)was seen to contact the bone, on the interface between bone and implant. Conclusion: SLA and RBM implant with rough surface shows better histomorphometrical result and the trend of prolonged bone formation and maturation in comparison with Machined implant. In addition, implant with rough surface seems to be helpful in early stage bone formation due to remaining of old bone fragments produced in implantation. From the results above, it is considered to be better to use implant with rough surface in implantation.