• Title/Summary/Keyword: spacer layer

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Non-Equilibrium Green Function Method in Spin Transfer Torque

  • You, Chun-Yeol
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.72-76
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    • 2007
  • We investigate the spin transfer torque in metallic multilayer system by employing Keldysh non-equilibrium Green function method. We study the dependences of the spin transfer torque on the detailed energy configuration of ferromagnetic, spacer, and lead layers. With Keldysh non-equilibrium Green function method applied to a single band model, we explore spin transfer torque effect in various layer structures and for various material parameters.

White Organic Light Emitting Diodes using Red and Blue Phosphorescent Materials with Blocking Layer

  • Park, Jung-Hyun;Kim, Gu-Young;Lee, Seok-Jae;Seo, Ji-Hyun;Seo, Ji-Hoon;Kim, Young-Kwan
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.218-221
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    • 2007
  • High-efficiency white organic light-emitting diodes(WOLEDs) were fabricated with two emissive layers and an blocking layer was sandwiched between two phosphorescent dopants, bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(FIrpic) as the blue emission and a newly synthesized red phosphorescent material guest, bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate($(acppy)_2Ir(acac)$). This blocking layer prevented a T-T annihilation in a red emissive layer, and balanced with blue and red emission as blocking of hole carriers. The white device showed Commission Internationale d'Eclairage($CIE_{x,y}$) coordinates of (0.317, 0.425) at 22400 $cd/m^2$, a maximum luminance of 27300 $cd/m^2$ at 268 $mA/cm^2$, a maximum luminous efficiency and power efficiency of 26.9 cd/A and 18.6 lm/W.

Interfacial Properties of Antiferromagnetically-coupled Fe/Si Multilayeres Films

  • Kim, K.W.;Y.V.Kudryavtsev;J.Y.Rhee;J.Dubowik;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.168-168
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    • 1999
  • Recently, Fe/Si multilayered films (MLF) have been a focus of interest due to the strong antiferromagnetic (AF) coupling observed in such kind of MLF originates from the same nature as in the metal/metal MLF. In particular, a question of whether the spacer layer in the Fe/Si MLF is metallic or semiconducting is of interest. In spite of various experimental techniques envolved in the study, the chemical composition and the properties of the interfacial regions in the MLF exhibiting the AF coupling is still questionable. The nature of the AF coupling and the interfacial properties of Fe/Si MLF are investigated in this study. A series of Fe/Si MLF with a fixed nominal thickness of Fe(3nm) and a variable thickness of Sk(1.0-2.2nm) were deposited by RF-sputtering onto glass substrates at room temperature. The atomic structures and the actual sublayer thicknesses of the Fe/Si MLF are investigated by using x-ray diffraction. The magnetic-field dependence of the equatorial Kerr effect clearly shows an appearance of the AF coupling between Fe sublayers at tsi = 1.5 - 1.8 nm. the drastic discrepancies between the experimental magnetooptical (MO) and optical properties, and based on the assumption of sharp interfaces between Fe and Si sublayers leads to a conclusion that pure si is absent in the AF-coupled Fe/Si MLF. Introducing in the model nonmagnetic semiconducting FeSi alloy layers between Fe and Si sublayers or as spacer between pure Fe sublayers only slightly improves the agreement between model and experiment. A reasonable agreement between experimental and simulated MO spectra was reached with using the fitted optical properties for the spacer with a typical metallic type of behavior. The results of the magnetic properties measured by vibrating sample magnetometer and magnetic circular dichroism are also analyzed in connection with the MO and optical properties.

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Deposition of Spacer-Si3N4 Thin Film for WSi2 Word-Line and Bit-Line (WSi2 word-line 및 bit-line용 spacer-Si3N4 박막의 증착)

  • Ahn S.;Kim D.W.;Kim J.H;Ahn S.J.;Kim Y.J.;Kim H.S.
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.402-406
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    • 2004
  • $WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

Design of Fall Impact Protection Pads Using 3D Printing Technology and Comparison of Characteristics according to Structure (3D 프린팅 기술을 활용한 낙상충격 보호패드 설계 및 구조에 따른 특성비교)

  • Park, Jung Hyun;Jung, Hee-Kyeong;Lee, Jeong Ran
    • Journal of the Korean Society of Clothing and Textiles
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    • v.42 no.4
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    • pp.612-625
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    • 2018
  • This study designed 16 kinds of basic structure and 4 kinds of modified structure for impact protection pads with a spacer fabric shape. The pad is a structure in which hexagonal three-dimensional units, composed of a surface layer and a spacer layer, are interconnected. Designed pads were printed with flexible $NinjaFlex^{(R)}$ materials using a FDM 3D printer. The printed pads were evaluated for impact protection performance, compression properties and sensory properties. The evaluation of the impact protection performance indicated that basic structures better than CR foam material at 20cm height were DV1.5, DX1.5, DX1.0, DV1.0 and HV1.5. The evaluation of the compression properties for the five types, with good results in the impact protection performance, indicated that DV1.0, DX1.0, DV1.5, HV1.5 and DX1.5 showed good results, respectively. The sensory evaluation of DV1.0, DX1.0, and DV1.5, which with good results when considering both the impact protection performance and the compression performance, showed that DV1.0 were the best for surface, flexibility, compression and weight. Therefore, DV1.0 is shown to be the best structure for protection pads.

Comparison of the Effect of Clothing Materials and the Openness of Garment on the Microclimate of the Skin Simulating System (의복재료와 개구부 요인이 의복내 미세기후에 미치는 영향력 비교)

  • 유화숙;김은애
    • Journal of the Korean Society of Clothing and Textiles
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    • v.20 no.6
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    • pp.1084-1095
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    • 1996
  • The purpose of this study was to compare the effect of clothing materials and the opening of the garment on the microclimate of the skin simulating system during the coupled heat and moisture transfer. To determine the effect of size and location of openness of the garment, openness was simulated by removing parts of the spacer ring of the modelling system. To evaluate the changes of humidity and temperature of air layer in the system, buffering indice, Kd and Pr, and efficiency of openness were determined. When the openness was imparted to the system, the transport rate of heat and moisture increased abruptly; at the total openness of 26.4%, which simulated the openness of neck, armhole and waist, Kd increased at least more than three times of the closed system. As the openness increased, the effect of clothing materials decreased gradually to lose its effect at the 60% openness and approached the value of nude. Temperature regulating index showed, however, higher value than nude which was apparently due to the still air layer.

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Numerical Analysis of NDR characteristics in resonant tunneling diodes with AllnAs/GaInAs Structure (AlIanAs/GaInAS계 공명터널링 다이오드의 부성저항 특성에 관한 수치 해석)

  • Kim, SeongJeen
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.7
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    • pp.51-57
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    • 1995
  • The theoretical analysis for AlInAs/GaInAs resonant tunneling diodes (RTDs), which have shown the improved negative differential resistance (NDR) characteristics, has scarcely been made in comparison with AlGaAS/GaAs RTDs. In this paper, the static current-voltage relation of Al$_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$As RTDs were numerically estimated by using a self-consistent method. Assuming a simplified RTD with single quantum well structure and spacer layers, the peak current density (J$_{P}$) and the peak-to-valley current ratio (PVCR) were analysed as the function of the thickness of the well, the barrier and the spacer layer, and temperature. As the results, the peak current density and the peak-to-valley current ratio indicated a reciprocal relation roughly in respect to the thicknesses of the well and the barrier, and it was theoretically predicted that it be not attainable to provide a high peak current desity (J$_{P}$) over 1${\times}10^{5}A/cm^{2}$ as well as the large peak-to-valley current ratio (PVCR) over 10 that were the the critical conditions for the practical use.

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An Analysis Using Numerical Model of Composite Multi-Layer Insulation for SOFC (SOFC용 고온 적층 단열재의 해석적 고찰)

  • CHOI, CHONGGUN;HWANG, SEUNG-SIK;CHOI, GYU-HONG
    • Transactions of the Korean hydrogen and new energy society
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    • v.30 no.6
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    • pp.540-548
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    • 2019
  • This study was conducted to develop insulation for solid oxide fuel cell (SOFC). The developed insulation is based on the lamination technology and the radiation shielding technology of the satellite insulation. The insulation material is consisting of insulation material for conduction resistance, spacer, and radiation shielding material. The experimental apparatus consisting vacuum bell jar, pump, heater and temperature recording device has developed to verify the performance of the insulation. The experimental values were used as reference data for the modeling development. In this paper, heat transfer is assumed to be one- dimensional phenomena for the prediction of insulation performance and internal temperature distribution in high temperature region of SOFC. The developed model was used to compare the performance difference of insulation types according to composition materials. The analysis result shows that the insulation including spacer and radiation shielding has better heat insulation performance than other cases. In this study, the thickness reduction effect of about 20% was shown compared to the insulation including only conductive material. It is noted that the radiant shielding material should be carefully selected for durability, because SOFC insulation should be used for a long time at high temperature.

Numerical Analysis of I-V Curves of RTDs with AlGaAs/GaAs Structure by Self-consistent Method (Self-consistent법에 의한 AlGaAs/GaAs구조 공명터널링 다이오드의 전기적 특성 해석)

  • Kim, S.J.;Park, G.Y.;Yoo, H.S.;Yi, S.H.;Choi, B.G.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1280-1282
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    • 1993
  • We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an $Al_{0.5}Ga_{0.5}$As/GaAs/$Al_{0.5}Ga_{0.5}As$ single quantum well. In this work, we estimate the theoretical current-voltage characteristics, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers.

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Design of 154kV, 1GVA HTS Cable (154kV, 1GVA 초전도케이블 설계)

  • Cho, Jeon-Wook;Sim, Ki-Duck;Kim, Seok-Ho;Lee, Su-Kil;Jang, Hyun-Man;Choi, Chang-Yeol;Lee, Kuen-Tae;Yang, Byeung-Mo;Kim, Seung-Rae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.192-192
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    • 2010
  • DAPAS (Development of Advanced Power system by Applied Superconductivity technologies) program that the, superconductivity national program has been started one of the 21C frontier programs from 2001 in Korea. The 3rd phase of DAPAS program was started at April 2007, and the ultimate goal of HTS cable project is to develop 154kV, 1GVA class HTS cable. The structure of 154kV, 1GVA HTS cable is single core with cold dielectric insulation. The cable core consists of the former, conduction layer, electrical insulation layer, shielding layer. The cable cryostat consists of two corrugated seamless aluminum tubes as its high sealing reliability, the tubes separated through a spacer arrangement. Outdoor termination was developed by LS cable and cryogenic system by CVE for 154kV, 1GVA class HTS cable. The 154kV, 1GVA HTS cable will be installed and be tested in KEPCO Gochang Testing Center from June 2010.

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