• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.409-417
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• 2003

We have studied electrical properties and luminous efficiency of organic light-emitting diodes(OLEDs) with different buffer layer and cathodes in a temperature range of 10 K and 300 K. Four different device structures were made. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinato) aluminum(III) (Alq$_3$) as an electron transport and omissive layer, and poly(3,4-ethylenedioxythiophene) :poly (styrenesulfonate) (PEDOT:PSS ) as a buffer layer. And LiAl was used as a cathode. Among the devices, the ITO/PEDOT:PSS/TPD/Alq$_3$/LiAl structure has a low energy-barrier height for charge injection and show a good luminous efficiency. We have got a highly efficient and low-voltage operating device using the conductive PEDOT:PSS and low work-function LiAl. From current-voltage characteristics with temperature variation, conduction mechanisms are explained SCLC (space charge limited current) and tunneling one. We have also studied energy barrier height and luminous efficiency at various temperature.

• 대한전자공학회논문지
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• 제18권2호
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• pp.27-35
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• 1981

본 연구에서는 비정질 갈코게나이트박막의 스위칭과도 특성을 분석하기 위해 공체전하중를 모델에 의한 수식적 이론과 그 이론의 타부성에 따른 실험을 연하였다. 이론과 실험에 대한 분석적인 관찰을 실온에서 비정용 잘코게나이드박막에 전압펄스를 인가할 때 생기는 스위칭과도 특성에 대해 비교하였다. 결과로는 전자스위칭 특성에 대한 단순한 이론적 모델의 형태로 설명할 수 있다. 캐리어의 주입은 스위칭 특성을 유발시키기에 필요하며 주입된 캐리어들은 공간전하제한전류(SCLC)로서 전류 흐름에 기여한다. 그러므로 제안된 전하제어 스위칭 특성은 2중 주입 공간 전하중첩 모델로 해석할 수 있다.

• ETRI Journal
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• 제27권3호
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.114-117
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• 2002

We have studied the dependence of current-voltage characteristics of Organic Light Emitting Diodes(OLEDs) on temperature-dependent variation. The OLEDs have been based on the molecular compounds. N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport. tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and Poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) as a buffer layer. The current-voltage characteristics were measured in the temperature range of 10K and 300K. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling region.Ā᐀會Ā᐀衅?⨀頱岒ᄀĀ저會Ā저?⨀⡌ឫഀĀ᐀會Ā᐀㡆?⨀쁌ឫഀĀ᐀會Ā᐀遆?⨀郞ග瀀ꀏ會Ā?⨀〲岒ऀĀ᐀會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ഀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫Ā저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ഀĀ저會Ā저ꡉ?⨀1岒ഀĀ저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග䈀Ā切

• Macromolecular Research
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• 제14권6호
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• pp.630-633
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• 2006

In heterojunction photovoltaic devices of $ITO/TiO_2/poly$(3-alkylthiophene)/Au, the photo current was characterized at different temperatures for different alkyl chain lengths and regioregularities: regiorandom, regioregular poly(3-hexylthiophene), and regioregular poly(3-dodecylthiophene). The regioregularity and alkyl chain length affected the photovoltaic characteristics due to differences in hole-carrier transportation. The drift charge mobilities of these devices were analyzed by the space-charge-limited current theory using the relation between the dark current and the bias voltage. The photocurrent in the devices based on poly(3-alkylthiophene)s decreased rapidly below the temperature at which the drift charge mobility was $10^{-5}\;cm^2/V{\cdot}s$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.757-761
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• 2001

We studied emitting properties of organic electroluminescent devices fabricated using the spin-coating and Langmuir-Blodgett(LB) technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. LB monolayer of poly(3-hexylthiophene)(P3HT) was deposited 27 layers onto the indium-tin-oxide(ITO) substrate as Y-type films by the vertical dipping method. In the absorption spectra, the λ$\_$max/ of P3HT-AA LB films and of spin-coating films showed about at 510, 545 and 590 nm corresponding to 2.43, 2.28, 2.10eV. And we observed that the turn-on voltage of devices deposited by LB method(10V) was higher than that of spin-coating method(8.5V) in voltage-current-luminance characteristic. In the logV-logJ characteristics of ITO/P3HT-AA LB/Al device, we confirmed that El device fabricated by LB method follows three conduction mechanisms: ohmic, space-charge-limited current(SCLC) conduction and trapped-carrier-limited space-charge current(TCLC) conduction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.460-463
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• 2000

The current-voltage characteristics of the sandwich system at different annealing temperatures and different bias voltages have been studied. In order to prepare the Al/V$O_X$/Al sandwich devices structure, thin films of vanadium oxide(V$O_X$) was deposited by r.f. magnetron sputtering from $V_2$$O_5$ target in 10% gas mixture of argon and oxygen, and annealed during lhour at different temperatures in vacuum. Crystall structure, surface morphology, and thickness of films were characterized through XRD, SEM and I-V characteristics were measured by electrometer. The films prepared below 20$0^{\circ}C$ were amorphous, and those prepared above 300 $^{\circ}C$were polycrystalline. At low fields electron injected to conduction band of vanadium oxide and formed space charge, current was limited by trap. Conduction mechanism at mid fields due to Schottky emission, while at high fields it changed to Fowler-Nordheim tunneling effects.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.243-248
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• 2015

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

• Journal of the Korean Physical Society
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• 제73권12호
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.