• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.4
• /
• pp.793-798
• /
• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Journal of Environmental Impact Assessment
• /
• v.13 no.6
• /
• pp.277-284
• /
• 2004

The chemical composition and properties of soil were determined at selected sites, such as Loess plateau, Gobi and sand deserts in northern China, where most dust storms occur. Although the transport of this sort of dust storms to Korean peninsula is a well-documented phenomenon, there is not enough information about the very source regions. In this reason, this study tried to measure the chemical composition, including soil elements, anthropogenic elements and ions for soil samples so that certain properties of some major source regions of Asian Dust can be provided. Furthermore, the results are classified into four types of soil like Loess, Loess & sand, Gobi, and sand in order to identify the characteristics and difference among the types. $(X/Al)_{crust}$ values for each soil type were also calculated in this study and compared with those of other references including Asian Dust material(ADM). The results indicated that Ca contribution was higher than Al in all the soil types of this study including ADM and, compared with the values of urban area, contribution of anthropogenic elements such as Cr, Pb, Zn was quite low. However, it must be noted that there is such a variation in the result of soil composition, but it is also certain that the very source region soil composition resolved from this study could support the enhanced study on Asian Dust phenomenon in Korea.

• Nuclear Engineering and Technology
• /
• v.20 no.2
• /
• pp.132-136
• /
• 1988

A strategic question in groundwater contaminant transport modeling is whether we need to treat waste packages or drums as individual, discrete sources or as approximately lumped sources. In this paper we present analyses of array sources in porous media. We analyze a planar array of sources in porous media with groundwater flow. We compare the concentration field predicted by a detailed model of individual point sources to concentration fields predicted by an infinite plane source and a single point source, all of the same equivalent strength. From this study we identified three regions: (1) a region close to the sources where the effects of adjacent sources are significant and individual source models should be used, (2) a region extending from a few meters to hundreds to thousands of meters downstream, where an equivalent source of infinite extent gives accurate results, and (3) a far-field region, where in an equivalent source of finite extent gives accurate results.

• Proceedings of the IEEK Conference
• /
• 2002.07a
• /
• pp.113-116
• /
• 2002

In this paper dynamic characteristics were investigated of the perception of a bound image width. Subjective evaluation tests were carried out of the width of a sound image when its presentation region was moved in the horizontal plane. As a result, the sound image width was perceived narrower or wider than the actual presentation region when the sound source width was decreased or increased, respectively. The result obtained shows that a phenomenon which is a kind of auditory motion aftereffects was occurred in the perception of a sound source with changing its width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.343-343
• /
• 2010

In this paper, Schottky barrier thin-film-transistors (SB-TFTs) with platinum silicide at source/drain region based on glass substrate were fabricated. Poly-silicon on glass substrates was crystallized by excimer laser annealing (ELA) method. The formation of pt-silicide at source/drain region is the most important process for SB-TFTs fabrication. We study the optimal condition of Pt-silicidation on glass substrate. Also, we propose this device as promising structure in the future.

• Proceedings of the KIPE Conference
• /
• 2013.07a
• /
• pp.275-276
• /
• 2013

In this paper, we proposed the Z-source four-switch three-phase rectifier. As we know, the conventional Four-Switch Three-Phase Rectifier(FSTPR) has advantages of the lower cost and less complex switching control. However, The conventional FSTPR can only either perform buck or boost operation, it can only attain the buck-boost operation by adding another DC-DC converter. In addition, besides its narrow output voltage region, distortion of the input current is serious either. Thus, we proposed the Z-source FSTPR which has buck-boost function and better input current waveform by applying the Z-impedance network to the conventional FSTPR. The validity of the proposed system was confirmed by experiments.

• Proceedings of the KSME Conference
• /
• 2008.11b
• /
• pp.2231-2235
• /
• 2008

Thermal performance of fusing system in laser printer is determined by FPOT(First print out time) required and toner fusing quality. FPOT is influenced by the thermal resistance of fusing system between heat source and nip region. Also FPOT is depended by the heat source power and toner fusing temperature. The fusing quality of toner is decided by the temperature, pressure and duration time in nip region. In this study, I have performed thermal analysis for the toner fusing system. Computational simulation has been used to understand the effect of heat source power and printing speed etc. on the temperature distribution of the fusing system. Also in order to predict fusing quality, numerical simulation of the process that paper is continuously supplied to the nip regions were performed. In comparison with the experimental results of the fusing quality vs transferred calory to the toner layer, I could evaluate various fusing condition parameters effected on the thermal performance.

• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.1
• /
• pp.85.2-85.2
• /
• 2019

We developed a new grid-based Monte Carlo code to trace far UV He II line photons that are incident on a thick H I region and subsequently transferred through Rayleigh and Raman scattering with atomic hydrogen. In particular, we consider a neutral region that is moving away from the He II emission source which is either monochromatic or is described by a Gaussian profile. The resultant Raman scattered He II line profiles from a monochromatic source are characterized by a double peaked core part with an extended Raman red tail that is attributed to multiple re-entry events. Complicated behaviors are observed in the case of a Gaussian He II source including the formation of a secondary red peak near the Balmer center dependent on the H I column density. A preliminary application of our results to the CFHT data of the planetary nebula IC 5117 is presented.

• Coupled systems mechanics
• /
• v.9 no.6
• /
• pp.521-538
• /
• 2020

The present study is concerned with the thermoelastic interactions in a two dimensional homogeneous, transversely isotropic thermoelastic solid with new modified couple stress theory without energy dissipation and with two temperatures in frequency domain. The time harmonic sources and Hankel transform technique have been employed to find the general solution to the field equations.Concentrated normal force, normal force over the circular region, thermal point source and thermal source over the circular region have been taken to illustrate the application of the approach. The components of displacements, stress, couple stress and conductive temperature distribution are obtained in the transformed domain. The resulting quantities are obtained in the physical domain by using numerical inversion technique. Numerically simulated results are depicted graphically to show the effect of angular frequency on the resulted quantities.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.942-945
• /
• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.