• Title/Summary/Keyword: source current density

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Effect of various MgO E-beam evaporation sources on the characteristics of MgO protecting layer of AC-PDP

  • Park, Sun-Young;Lee, Mi-Jung;Kim, Soo-Gil;Kim, Hyeong-Joon;Moon, Sung-Hwan;Kim, Jong-Kuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.223-226
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    • 2004
  • MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

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Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

  • Song, Hohyun;Seo, Sanghun;Chang, Hongyoung
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1436-1440
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    • 2018
  • SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

Efficiency of Photovoltaic Cell with Random Textured Anti Glare (RTAG) Glass

  • Kim, Geon Ho;Jeon, Bup Ju
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.133-137
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    • 2016
  • The surface treatment of cover glass for conversion efficiency of photovoltaic cell is important to reduce reflectivity and to increase the incident light. In this work, random textured anti glare (RTAG) glass was prepared by wet surface coating method. Optical properties due to the changes of surface morphology of RTAG glass were compared and conversion efficiency of photovoltaic cell was researched. Grain size and changes of surface morphologies formed with surface etching time greatly affected optical transmittance and transmission haze. Current density (Jsc) were high at the condition when surface morphologies reflection haze were low and transmission haze were high. Jsc was $40.0mA/cm^2$ at glancing angle of $90^{\circ}$. Incidence light source was strongly influenced by surface treatment of cover glass at high incidence angle but was hardly affected light source at the low angle of incidence.

Fabrication of YB $a_2$C $u_3$ $O_{7-x}$ film on a (100) SrTi $O_3$ single crystal substrate by single liquid source MOCVD method ((100) SrTi $O_3$ 단결정 기판위에 단일 액상 원료 MOCVD 법에 의한 YB $a_2$C $u_3$ $O_{7-x}$ 박막 제조)

  • Jun Byung-Hyuk;Choi Jun-Kyu;Kim Ho-Jin;Kim Chan-Joong
    • Progress in Superconductivity and Cryogenics
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    • v.6 no.3
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    • pp.16-20
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    • 2004
  • YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

Deposition condition of YBCO films by continuous source supplying MOCVD method (연속 연료공급식 MOCVD법으로 증착시킨 YBCO 박막의 증착조건)

  • Kim Ho-Jin;Joo Jin-ho;Choi Jun-Kyu;Jun Byung-Hyuk;Kim Chan-Joong
    • Progress in Superconductivity and Cryogenics
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    • v.6 no.3
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    • pp.6-11
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    • 2004
  • YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

Effect of Organic Solvents on the Electrical Properties of a Neat Epoxy Resin System

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.2
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    • pp.89-92
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    • 2012
  • The effect of organic impurities on the electrical properties of a neat epoxy resin was studied. 0.05, 0.5 and 1.0 phr of iso-propyl alcohol (IPA) and methylene chloride (MC) mixture (50/50 wt%) were used as impurities. The current density, volume resistance and impedance characteristics of the epoxy/IPA/MC systems were measured with a high voltage source meter and broadband dielectric spectroscopy. Glass transition temperature (Tg) was measured by a differential scanning calorimetry (DSC) and it was found that Tg decreased slightly with increasing IPA/MC content. It was also found that Tg values of the epoxy systems with various IPA/MC contents were closely related to the current density, volume resistance and impedance characteristics.

A New Protection Strategy of Impressed Current Cathodic Protection for Ship

  • Oh, Jin-Seok;Kim, Jong-Do
    • Journal of Mechanical Science and Technology
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    • v.18 no.4
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    • pp.592-596
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    • 2004
  • Corrosion is never avoided in the use of materials with various environments. The underwater hull is normally protected against rusting by several coatings of anti-corrosive paint. The purpose of ICCP(Impressed Current Cathodic protection) system is to eliminate the rusting or corrosion, which occurs on metal immersed in seawater. The anode of ICCP system is controlled by an external DC source with converter. The function of anode is to conduct the protective current into seawater. The proposed algorithm includes the harmonic suppression control strategy and the optimum protection strategy and has tried to test the requirement current density for protection, the influence of voltage, the protection potential. This paper was studied the variation of potential and current density with environment factors, time and velocity, and the experimental results will be explained.

Mitigation of steel corrosion in concrete by electrochemical chloride extraction at the AI-supporting electric source

  • Jiseok Kim;Ki Yong Ann;Woongik Hwang
    • Computers and Concrete
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    • v.33 no.6
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    • pp.631-642
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    • 2024
  • The present study concerns the corrosion mitigation of electrochemical chloride extraction (ECE) in concrete structure. Concrete specimen was fabricated with 5.0% chloride in cast, while the other specimen was exposed to 4.0M NaCl solution for 1 year to accelerate corrosion of steel. Then, the ECE was applied to the concrete specimen with 1000 mA/m2 of the current density for 2, 4 and 8 weeks, respectively. During the ECE, the corrosion current density and corrosion potential were regularly monitored. As a result, the ECE was very effective in mitigating the degree of corrosion on the steel surface. The corrosion current density was significantly reduced from thousands to decades mA/m2, while the corrosion potential was mostly shifted to positive direction. Assuming that the corrosion starts at 1.0 mA/m2 of the corrosion current density or/and -275 mV vs SCE of the corrosion potential, the ECE could not fully achieve the repassivation of the steel, although its degree was lowered more or less depending on the duration of the treatment and type of chloride contamination. A visual examination confirmed that an increase in the duration of the treatment could lower the rust formation, but never fully removed all rust stains.

Grid를 이용한 고밀도 플라즈마 소스의 이온 특성 연구

  • Byeon, Tae-Jun;Gwon, A-Ram;Kim, Seung-Jin;Kim, Jeong-Hyo;Park, Min-Seok;Jeong, U-Chang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.497-497
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    • 2012
  • 산업의 발전함에 따라 고기능성 박막의 수요가 증가하고 있으며, magnetron sputtering, e-beam evaporation, ion beam 등을 이용한 박막 증착에 대한 연구가 많이 진행되고 있다. 그러나 기존 방법만으로는 박막 접착계면의 불균일로 인해 고기능성 박막 성장이 어렵다는 단점을 가지고 있다. 이러한 문제를 해결하기 위하여 박막 공정 중 고밀도 플라즈마 소스(high density plasma source)를 통해 추가적인 에너지를 인가하여 박막의 밀도를 bulk 수준으로 증가시키고 내부 응력을 조절하는 연구에 대한 관심이 커지고 있다. 특히 grid를 이용하여 플라즈마 내 이온의 입사에너지를 증가시킴으로써, 기존 공정보다 고기능성 박막을 구현할 수 있다. 본 연구에서는 RF power를 이용한 inductively coupled plasma를 통해 플라즈마를 생성시킨 후 grid에 DC power를 인가하는 플라즈마 소스를 개발하였으며, 시뮬레이션을 통해 plasma density와 ion current density, ion energy 분석 및 grid 디자인을 하였다. 개발된 플라즈마 소스는 ion energy analyzer를 통해 RF power 및 grid에 인가하는 power의 세기에 따라 이온화 정도 및 이온의 입사에너지를 측정하였다.

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Quench Behaviors of Superconducting YBCO film for Fault Current Limiters applying Protective Current Transformer (변류기(p-CT)를 적용한 YBCO 초전도 저항형 한류기의 ?치 특성)

  • 박권배;이방욱;강종성;오일성;현옥배
    • Progress in Superconductivity
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    • v.5 no.2
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    • pp.128-131
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    • 2004
  • The resistive superconducting fault current limiters (SFCLs) are very attractive devices for the electric power network. But they have some serious problems when the YBCO thin films were used for the current limiting materials due to the in homogeneities caused by manufacturing process. When the YBCO films have some inhomogeneities, simultaneous quenches are difficult to achieve when the fault current limiting units are connected in series for increasing operating voltage ratings. Magnetic field application is one of the prospective way of inducing simultaneous quenches far the series-connected resistive FCL components. Magnetic field was typically generated by the fault current thorough a coil, which is connected to components of the fault current limiter in series, leaving the problem, which provides significant inductance to the power line and suppresses critical current density of the superconducting components. In this article we investigated the possible application of the protective current transformer (p-CT), which is available current source to the magnetic coil. This system inductively coupled to the circuit, therefore, remarkably reducing impedance to the circuit. The current by the protective current transformer was directly fed to the coil, generating magnetic field large enough to reduce critical current density of the components. This successfully induced simultaneous quenches of the series-connected resistive FCL components.

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