• Journal of Welding and Joining
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• v.35 no.3
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• pp.28-34
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• 2017

The authors derived the criteria on the process parameters of laser depositions with metal powers(SUS316L & IN718) by evaluating the surface and cross-section properties of the deposition layers. The surface characteristics of the deposition layer are investigated through optical microscopy by controlling the process parameters of laser output, powder feeding rate and gas feeding rate. The cross-section characteristics were also analyzed after polishing and chemical etching process. As the gas feeding rate increased, the amount of powder loss increased and the difference in the dilution ratio and heat affected zone depending on laser outputs was observed. In addition, the powder feeding rate used in the experiment did not interfere with the energy absorption of the base material.

• Nuclear Engineering and Technology
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• v.34 no.3
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• pp.242-249
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• 2002

The relationship between the tritium release rate from the nuclear power plant and tritium concentration in the environment around the Kori site was modeled. The tritium concentration in the atmosphere was calculated by multiplying the release rates and $\chi$/Q values, and the d3V deposition rate at each sector according to the direction and the distance was obtained using a dry deposition velocity. The area around Kori site was divided into 6 zones according to the deposition rate. The six zones were divided into 14 compartments for the numerical simulation. Transfer coefficients between the compartments were derived using site characterization data. Source terms were calculated from the dry deposition rates. Tritium concentration in surface soil water and groundwater was calculated based upon a compartment model. The semi-analytical solution of the compartment model was obtained with a computer program, AMBER. The results showed that most of tritium deposited onto the land released into the atmosphere and the sea. Also, the estimated concentration in the top soil agreed well to that measured. Using the model, tritium concentration was predicted in the case that the tritium release rates were doubled.

• Progress in Superconductivity and Cryogenics
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• v.10 no.2
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• pp.12-15
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• 2008

Nano-sized dots have been formed on the buffered metal substrates using the novel approach of the electro-spray deposition, to modulate the substrate surface and induce the columnar defects in REBCO films grown on it. The $BaZrO_3$ precursor solution was synthesized and electro-sprayed out onto the negatively charged substrate surface. Using the electrostatic force, nano-sized dots can be grown and uniformly distributed on the buffered metal substrate. The height of BZO nanodots was observed above the 200nm, which are beneficial to induce the columnar defects onto the BZO as a seed. The density of BZO nanodots was also investigated and ${\sim}7.8/{\mu}m^2$ was obtained. As the deposition distance of electro-spray was shortened there was ${\sim}8times$ increase of density of nanodots. The optimization of process variables in electro-spray deposition are discussed in respect to the superconducting REBCO films processed by the Metal-Organic Deposition with the effective flux pinning properties.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.174-177
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• 1991

Fluorine-doped $SnO_2\;(SnO_2:F)$ films were prepared in ordinary atmosphere on borosilicate glass substrates using pyrosol deposition method starting from the solutions composed of $SnCl_4-5H_2O-NH_4F-CH_3OH-H_2O-HCl$ in an attempt to develop transparent conductors for use in amorphous silicon (a-Si) solar cello. The deposition rate of films increased with the increase in the content of $H_2O$, whereas it decreased with increasing the content of $CH_3OH$. When air was used as the carrier gas, the lowest electrical resistivity was obtained from a solution having $CH_3OH/H_2O$ mol ratio of about $2{\sim}3$ in the solution. The use of $N_2$ of the same flow rate as the carrier gab resulted always in the high resistive films, but the resistivity of the films decreased continuously with the increase in the content of $H_2O$. The surface morphology and preferred orientation of films were also affected by the solvent composition and the content of HCl in the solution. The room-temperature resistance of the films were fairly stable after heat-treatments up to $600^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.226-230
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• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.141-145
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• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.