• Title/Summary/Keyword: solid-state drive

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Reactivity of Biogenic Manganese Oxide for Metal Sequestration and Photochemistry: Computational Solid State Physics Study (전산 고체물리를 이용한 바이오 산화망간 광물의 금속흡착과 광화학 반응도의 이해)

  • Kwon, Ki-Deok D.;Sposito, Garrison
    • Journal of the Mineralogical Society of Korea
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    • v.23 no.2
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    • pp.161-170
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    • 2010
  • Many microbes, including both bacteria and fungi, produce manganese (Mn) oxides by oxidizing soluble Mn(II) to form insoluble Mn(IV) oxide minerals, a kinetically much faster process than abiotic oxidation. These biogenic Mn oxides drive the Mn cycle, coupling it with diverse biogeochemical cycles and determining the bioavailability of environmental contaminants, mainly through strong adsorption and redox reactions. This mini review introduces recent findings based on quantum mechanical density functional theory that reveal the detailed mechanisms of toxic metal adsorption at Mn oxide surfaces and the remarkable role of Mn vacancies in the photochemistry of these minerals.

1-Axis Actuator for Compensating Focus Error and SA due to the Variation of Cover-Layer Thickness in Small-Form-Factor Optical Disk (초소형 광디스크의 보호층 두께 편차 보상용 1축 엑츄에이터)

  • Park, Jin-Moo;Hong, Sam-Nyol;Choi, In-Ho;Kim, Jin-Yong
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.11a
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    • pp.227-231
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    • 2004
  • Technological advance in information technology has sparked the necessity of small form factor (SFF) optical disk for mobile devices. Small form factor optical disk is highly anticipated to be a next generation storage device because it can be used for a cost-effective way compared with solid state memory. For the application to the 5 mm height small-form-factor optical disk drive, we have presented an optical flying head and swing arm actuator. In this study, we propose a small 1-axis actuator for compensating ficus error and SA due to the variation of cover-layer thickness in the cover-layered small optical disk. The main design issues of the 1-axis actuator are the realization of compact structure and the new support structure of the actuator: Finally, the compensating principle and performance of the 1-axis actuator will be explained.

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A Study for Configuring Hybrid Storage System include DRAM SSD and HDD devices (DRAM SSD와 하드디스크 어레이를 이용한 하이브리드 저장장치 시스템 설계)

  • Kim, Young-Hwan;Son, Jae-Gi;Park, Changwon
    • Annual Conference of KIPS
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    • 2012.11a
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    • pp.288-289
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    • 2012
  • 최근 데이터 저장을 위한 고속 입출력에서 병목현상을 해결하기 위해 다양한 SSD(Solid State Drive) 관련 연구가 많이 수행되고 있다. 대표적인 것으로 비휘발성 메모리인 플래시와 차세대 반도체 메모리인 SCM(Storage Class Memory) SSD가 있고, 휘발성 메모리인 DRAM기반의 SSD가 있다. 플래시 또는 SCM 메모리기반 저장장치는 하드 디스크기반 저장장치에 비해 읽기 속도가 빠르며, 내구성이 강하다는 장점으로 새로운 저장장치 시스템의 저장매체로 부각되고 있으나, 단위 저장 공간 당 높은 가격으로 인해 저장장치 시스템에 적용하기 에는 많은 문제점이 있다. 최근에는 이러한 문제를 해결하기 위해 고용량의 하드디스크와 SSD를 RAID 또는 단일 저장장치 매체로 구성하는 하이브리드 저장장치에 관한 연구와 제품이 출시되고 있다. 본 논문에서는 이러한 하이브리드 저장 매체 어레이를 저장장치 시스템으로 구성하기 위한 볼륨구성과 해당 서버에 볼륨 제공 서비스를 수행하기 위한 하이브리드 저장장치 시스템 설계 방법에 대해 설명한다.

Establishment of an Efficient Agrobacterium Transformation System for Eggplant and Study of a Potential Biotechnologically Useful Promoter

  • Claudiu Magioli;Ana Paula Machado da Rocha;Pinheiro, Marcia-Margis;Martins, Gilberto-Sachetto;Elisabeth Mansur
    • Journal of Plant Biotechnology
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    • v.2 no.1
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    • pp.43-49
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    • 2000
  • An efficient and reliable Agrobacterium transformation procedure based on TDZ (thidiazuron)-induced organogenesis was established and applied to six Brazilian eggp1ant varieties. Optimum transgenic plants recovery was achieved upon the study of the following parameters affecting transformation efficiency, using F-100 variety as a model: i) explant source; ii) pre-culture period; iii) physical state of the pre-culture medium and iv) coculture conditions. The highest frequency of kanamycin-resistant calli derived from leaf explants (5%) was obtained without a pre-culture period and co-cultivation for 24 h in liquid medium followed by five days on solid RM (regeneration medium). For cotyledon explants, best results were achieved upon a pre-culture of 24 h in liquid RM and a co-cultivation period of 24 h in liquid RM followed by three days in solid RM, resulting in a transformation Sequency of 22.7%. Kanamycin-resistant organogenic calli were also obtained from cultivars Emb, Preta Comprida, Round nose Shaded, Campineira and Florida Market. The expression pattern of an epidermis-specific promoter was studied using transformants expressing a chimaeric construct comprised by the promoter Atgrp-5 transcriptionally fused to the coding region of the gus gene. The expression pattern was similar to that previously observed in tobacco and Arabidopsis thaliana, with preferential expression at the epidermis and the stem phloem. These results support the idea that the Atgrp-5 promoter can be used to drive defense genes in these tissues, which are sites of pathogen interaction and spread, in programs for the genetic improvement of eggplant.

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Research on Fault Tolerant Avionics Memory Design through Multi Level Cell Flash Memory Reliability Analysis (멀티 레벨 셀 플래시 메모리 신뢰성 분석을 통한 항공 전자장비용 내결함성 메모리 설계 연구)

  • Jeong, Sang-gyu;Jun, Byung-kyu;Kim, Young-mok;Chang, In-ki
    • Journal of Advanced Navigation Technology
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    • v.20 no.4
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    • pp.321-328
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    • 2016
  • Typical MLC NAND flash devices are considered less reliable than SLC NAND flash devices. Although raw bit error rate (RBER) of MLC flash had been considered approximately 1000times or more higher than that of SLC flash, recent research conducted on Google's data center shows that it is much lower than such expectation. Based on the research, we devised In Drive Data Duplication (IDDD) scheme that efficiently exploit MLC flash's sufficient capacity to improve its data reliability without structural complexity increment using SSD intrinsic firmware layer, and showed the data reliability expectation of MLC flash could be significantly higher than that of SLC flash from measured and calculated error rates. Even though RBER of SLC flash was lower than that of MLC flash in 44 out of 48 cases we studied, applying IDDD scheme, RBER of MLC flash was became lower than that of SLC in all 48 cases and uncorrectable bit error rate (UBER) of MLC flash was became lower than that of SLC flash in 45 out of 48 cases.

Adaptive Design Techniques for High-speed Toggle 2.0 NAND Flash Interface Considering Dynamic Internal Voltage Fluctuations (고속 Toggle 2.0 낸드 플래시 인터페이스에서 동적 전압 변동성을 고려한 설계 방법)

  • Yi, Hyun Ju;Han, Tae Hee
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.9
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    • pp.251-258
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    • 2012
  • Recently, NAND Flash memory structure is evolving from SDR (Single Data Rate) to high speed DDR(Double Data Rate) to fulfill the high performance requirement of SSD and SSS. Accordingly, the proper ways of transferring data that latches valid data stably and minimizing data skew between pins by using PHY(Physical layer) circuit techniques have became new issues. Also, rapid growth of speed in NAND flash increases the operating frequency and power consumption of NAND flash controller. Internal voltage variation margin of NAND flash controller will be narrowed through the smaller geometry and lower internal operating voltage below 1.5V. Therefore, the increase of power budge deviation limits the normal operation range of internal circuit. Affection of OCV(On Chip Variation) deteriorates the voltage variation problem and thus causes internal logic errors. In this case, it is too hard to debug, because it is not functional faults. In this paper, we propose new architecture that maintains the valid timing window in cost effective way under sudden power fluctuation cases. Simulation results show that the proposed technique minimizes the data skew by 379% with reduced area by 20% compared to using PHY circuits.

Development of 2-kW Class C Amplifier Using GaN High Electron Mobility Transistors for S-band Military Radars (S대역 군사 레이더용 2kW급 GaN HEMT 증폭기 개발)

  • Kim, Si-Ok;Choi, Gil-Wong;Yoo, Young-Geun;Lim, Byeong-Ok;Kim, Dong-Gil;Kim, Heung-Geun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.421-432
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    • 2020
  • This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

An Efficient Dual Queue Strategy for Improving Storage System Response Times (저장시스템의 응답 시간 개선을 위한 효율적인 이중 큐 전략)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.10 no.3
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    • pp.19-24
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    • 2024
  • Recent advances in large-scale data processing technologies such as big data, cloud computing, and artificial intelligence have increased the demand for high-performance storage devices in data centers and enterprise environments. In particular, the fast data response speed of storage devices is a key factor that determines the overall system performance. Solid state drives (SSDs) based on the Non-Volatile Memory Express (NVMe) interface are gaining traction, but new bottlenecks are emerging in the process of handling large data input and output requests from multiple hosts simultaneously. SSDs typically process host requests by sequentially stacking them in an internal queue. When long transfer length requests are processed first, shorter requests wait longer, increasing the average response time. To solve this problem, data transfer timeout and data partitioning methods have been proposed, but they do not provide a fundamental solution. In this paper, we propose a dual queue based scheduling scheme (DQBS), which manages the data transfer order based on the request order in one queue and the transfer length in the other queue. Then, the request time and transmission length are comprehensively considered to determine the efficient data transmission order. This enables the balanced processing of long and short requests, thus reducing the overall average response time. The simulation results show that the proposed method outperforms the existing sequential processing method. This study presents a scheduling technique that maximizes data transfer efficiency in a high-performance SSD environment, which is expected to contribute to the development of next-generation high-performance storage systems

Excimer-Based White Phosphorescent OLEDs with High Efficiency

  • Yang, Xiaohui;Wang, Zixing;Madakuni, Sijesh;Li, Jian;Jabbour, Ghassan E.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1520-1521
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    • 2008
  • There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

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Selective Recovery of the SSD TRIM Command in Digital Forensics (디지털 포렌식 관점에서 SSD TRIM 명령의 선별적 복구)

  • Hwang, Hyun Ho;Park, Dong Joo
    • KIPS Transactions on Computer and Communication Systems
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    • v.4 no.9
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    • pp.307-314
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    • 2015
  • Recently, market trends of auxiliary storage device HDD and SSD are interchangeable. In the future, the SSD is expected to be used more popular than HDD as an auxiliary storage device. The TRIM command technique has been proposed and used effectively due to the development of the SSD. The TRIM command techniques can be used to solve the problem of Freezing SSD that operating system cooperates with the SSD. The TRIM command techniques are performed in the idle time of the internal SSD that are actually deleted when a user deletes the data. However, in the point of view of computer forensics, the digital crime is increasing year by year due to lack of data recovery. Thus, this rate of arrest is insufficient. In this paper, I propose a solution that selectively manages data to delete based on advantage of the stability and the write speed of the TRIM command. Through experiments, It is verified by measuring the performance of the traditional method and selected method.