• The Plant Pathology Journal
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• v.26 no.4
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• pp.346-352
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• 2010

This study was conducted in Bahar and Lalehjin, Hamadan, Iran to assess the biocontrol efficacy of Coniothyrium minitans Campbell against potato white mold caused by Sclerotinia sclerotiorum (Lib.) de Bary under field and greenhouse conditions. In addition, the resistance of common potato cultivars against S. sclerotiorum was determined in a greenhouse experiment. After straw inoculation of six potato cultivars (Pashandi, Istambouli, Agria, Marfauna, Alpha and Spartaan) with S. sclerotiorum, the least disease severity was observed in Spartaan and Marfauna. Agria showed the most susceptibility to S. sclerotiorum. Compared with the healthy control, different concentrations of C. minitans conidia ($10^7$, $10^8$ and $10^9$ conidia/mL) reduced disease severity under greenhouse condition, and a concentration $10^9$ was the most effective treatment. During 2008 and 2009, four field trials were conducted to evaluate the efficacy of C. minitans in different soil and aerial applications on disease incidence of potato white mold. In 2008, soil application of $Contans^{(R)}$ WG (a commercial product of C. minitans) showed the greatest biocontrol capacity whereas soil application of solid-substrate C. minitans was found inferior when compared with other treatments in both Bahar and Lalehjin field sites. In 2009, benomyl application was the most effective treatment in reducing disease incidence in both tested field sites.

• Tribology and Lubricants
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• v.34 no.6
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• pp.313-317
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• 2018

Carbon-based coatings, including carbon nanotubes (CNTs), graphene, and buckyball ($C_{60}$), receive much interest because of their outstanding mechanical and electrical properties for a wide range of electromechanical component-based applications. Previous experimental results demonstrate that these carbon-based coatings are promising solid lubricants because of their superior tribological properties, and thus help prolong the lifetime of silicon-based applications. In this study, CNT coatings are deposited on a bare silicon (100) substrate by electrodynamic spraying under different deposition conditions. During the coating deposition, the applied voltage, CNT concentration of the solution, distance between the injecting nozzle and the substrate and diameter of the injecting nozzle are optimized to control the thickness and surface roughness of the CNT coatings. The surface morphology and thickness of the coatings are characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The friction and wear properties of the coatings are investigated by using a pin-on-reciprocating-type tribotester under various experimental conditions. The friction coefficient of the CNT coating is as low as 0.15 under high normal loads. The overall results reveal that CNT coatings deposited by electrodynamic spraying provide relatively uniform with superior lubrication performance.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• Journal of the Korean Society for Nondestructive Testing
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• v.16 no.4
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• pp.241-250
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• 1997

The velocity dispersion of surface acoustical wave(SAW) of Si layer/mesh Au/Si substrate was measured by the frequency analysis technique of backward radiation at liquid/solid interface. The difference of backward radiation patterns depending on used transducers (2, 5, 10MHz) confirmed that the backward radiation phenomenon was caused by the energy radiation from SAW generated in surface region. An ultrasonic goniometer was constructed to measure continuously the angular dependence of backscattered intensity. The angular dependences of backward radiation(5MHz) were measured for Ni layer/Al substrate specimens that were bonded by epoxy involving different content of Cu powder. It was known that the width and pattern of backward radiation had informations such as the velocity dispersion, bonding quality and structure of surface region.

• Microbiology and Biotechnology Letters
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• v.24 no.5
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• pp.597-603
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• 1996

This study was carried out to examine degradation characteristics of microalgae Chlorella vulgaris in methane fermentation. We measured COD and VS reduction, gas and methane productivity, VFA (volatile fatty acid), respectively. Then we calculated material balance and hydrolysis rates in soluble and solid material. The substrate concentration was controlled from 14 gCOD$_{cr}$/l to 64 gCOD$_{cr}$/l in batch cultures, and HRT (hydraulic retention time) controlled from 2 days to 30 days in continuous experi- ments. The results were as follows. In batch culture, accumulated gas productivity increased with the increase of the substrate concentration. The SS and VSS was removed all about 30% increase of substrate concentration and the most of the degradable material removed during the first 10 days. The curve of gas and methane production rate straightly increased until substrate concentration is 26 gCOD$_{cr}$/l. In continuous culture experiments, the removal rates at HRT 10days were 20% for total COD and TOC, respectively. At longer HRT, there was no increase in the removal efficiency. At HRT 15 days, the removal rates were 30% for SS and VSS, respectively. Soluble organic materials were rapidly degraded, and so there was no accumulated. Soluble COD concentration was not increase regardless of HRT-increasing. That meaned the hydrolysis was one of the rate-limiting stage of methane fermentation. The first-order rate constants of hydrolysis were 0.23-0.28 day$^{-1}$ for VSS, and 0.07-0.08 day$^{-1}$ for COD.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.70.1-70.1
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• 2012

In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.659-664
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• 2000

To develop anode-supported tubular cell with proper porosity, we have investigated the anode substrate and t the electrolyte-coated anode tube. The anode substrate was manufactured as a function of carbon content in the range of 20 to 50 vol.%. As the carbon COntent increased, the porosity of the anode substrate increased slightly and the carbon c content with proper porosity is found to be 30 vol.%. The anode-supported tube was fabricated by extrusion process a and the electrolyte layer was coated on the anode tube by slurry coating process. The anode-supported tube was cofired successfully at $^1400{\circ}C$ in air. The porosity of the anode tube was 35%. From the gas permeation test, the anode t tube was found to be porous enough for gas supply. On the other hand, the anode-supported tube with electrolyte layer indicated a very low gas permeation rate. This means that the coated electrolyte was dense.