• Korean Journal of Materials Research
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• v.29 no.12
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• pp.753-756
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• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• Progress in Superconductivity and Cryogenics
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• v.17 no.1
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• pp.44-47
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• 2015

High voltage superconducting apparatuses have been developed presently around the world under AC and DC sources. In order to improve electrical reliability of superconducting apparatuses with AC and DC networks, a study on the DC as well as the AC electrical breakdown characteristics of cryogenic insulations should be conducted for developing a high voltage superconducting apparatus. Recently, a sub-cooled liquid nitrogen cooling system is known to be promising method for developing a high voltage superconducting apparatus. A sub-cooled liquid nitrogen cooling system uses gaseous nitrogen to control the pressure and enhance the dielectric characteristics. However, the dielectric characteristics of gaseous nitrogen are not enough to satisfy the grade of insulation for a high voltage superconducting apparatus. In this case, the application of solid insulating barriers is regarded as an effective method to reinforce the dielectric characteristics of a high voltage superconducting apparatus. In this paper, it is dealt with a barrier effect on the DC and AC dielectric characteristics of gaseous nitrogen with respect to the position and number of solid insulating barriers. As results, the DC and AC electrical breakdown characteristics by various barrier effects is verified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.119-122
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• 2002

The calculated and measured dielectric constant of (1-x)(Al$\sub$1/2/Ta$\sub$1/2/)O$_2$-x(Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$(O$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ and (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ was substituted by (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$, the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$was slightly bigger than one of (A1$\sub$1/2/Ta$\sub$1/2)O$_2$, the cell parameters increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.274-283
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• 1997

These days, according to surprising development of communication enterprises, every soft of devices is getting smaller and cheaper. Among these Devices, microwave dielectric ceramics are studied and progressed briskly as the materials of dielectric resonator. Dielectric properties of BaO-S $M_{2}$ $O_{3}$-Ti $O_{2}$, one of the BaO Lnsub 2/ $O_{3}$-Ti $O_{2}$ (Ln=La, Sm, Nd, Pr…) system, synthesized by solid-reaction and coprecipitation method were investigated. Disk-type samples were sintered at 1250-1400.deg. C for 2hrs. As a result, single phase was not synthesized in both method. First created the second phase of S $M_{2}$ $Ti_{2}$ $O_{7}$, and then the last phase of $Ba_{3.75}$S $m_{9.5}$ $Ti_{18}$ $O_{54}$, Ti $O_{2}$, and $Ba_{2}$ $Ti_{9}$ $O_{20}$. When the sample was sintered at 1280.deg. C (in solid reaction method) and at 1310.deg. C (in coprecipitation method), it obtained highest dielectric constant (72.96 and 71.70, respectively) and high Q value. Above that temperature, dielectric constant and Q value decreased because of lattice defect according to oxygen vacancies........

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.108-112
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• 2003

The calculated and measured dielectric constants of (1-x)(A $l_{1}$2/ T $a_{1}$2/) $O_2$-x(M $g_{1}$3/ T $a_{2}$3/) $O_2$ (0$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (A $l_{1}$2/ T $a_{1}$2/) $O_2$ and (M $g_{1}$3/ T $a_{2}$3/) $O_2$ were orthorhombic and tetragonal trirutile structure, respectively. When (A $l_{1}$2/ T $a_{1}$2/) $O_2$ was substituted by (M $g_{1}$3/ T $a_{2}$3/) $O_2$, the phase transformed to tetragonal structure over 60 mole. Because the total ionic radius of [(Mg+2Ta)/3]$^{4+}$ was slightly bigger than one of [(Al+Ta)/2]$^{4+}$, the lattice parameters increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution. The measured dielectric constant increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1240-1246
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• 1994

While sintering the Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 system through solid-reaction route, pyrochlore(Pb3Nb4O13) phase while reduces the dielectric constant is inevitably formed. Substitution of Pb(Mg1/3Nb2/3)O3 with PbTiO3 and BaTiO3 can retard the occurrence of pyrochlore phase. The perovskite solid-solution without containing pyrochlore phase can be obtained when we consolidated the materials consisting of PbTiO3 and BaTiO3 at 1200℃ for 2 hours. The sintered body composed of 0.8Pb(Mg1/3Nb2/3)O3-0.1PbTiO3-0.1BaTiO3 composition showed the diffused phase transition(DPT) phenomena and the maximum value of dielectric constant at 0℃ (Tc') with the value of 1.3×104.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.143-147
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• 2017

Structural studies on the addition characteristics of Nb ions to $BaTiO_3$ solid solutions were performed by XRD and SEM/EDS technique. The X-ray diffraction peaks of the (111), (200) and (002) planes of Nb-doped $BaTiO_3$ solid solutions with different mole% of Nb were analyzed. We also investigated the relationship between the dielectric and structural properties of Nb-doped $BaTiO_3$. The transition temperatures of $BaTiO_3$ solid solution doped with 0.5mole%Nb and 1.0 mole%Nb were ${\sim}116^{\circ}C$ and ${\sim}87^{\circ}C$, respectively, which were found to be shifted to very low temperature from the transition temperature of pure $BaTiO_3$ (about $125^{\circ}C$). As a result of analysis of 1/K versus T and ln[$(1/K)-(1/K_m)$ versus ($T-T_m$)] of the two compositions used in this experiment, the diffusivity slightly differs from that of pure $BaTiO_3$ at temperatures above Curie temperature. And this characteristic was analyzed by applying the modified Curie-Weiss law.

• The Journal of Korea Robotics Society
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• v.16 no.1
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• pp.41-48
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• 2021

In this paper, we review papers which report to the all solid-state electroactive polymer-based tunable lens. Since electroactive polymer-based tunable lenses change their focal length by responding to electric stimuli, it can be minimized the size and weight of optical modules. Thus, it has been received attention in the robot, mobile device and display industry. The all solid-state electroactive polymer-based tunable lenses can be classified into two categories depending on the classification of materials: ionic electroactive polymer-based lenses and non-ionic electroactive polymer-based lenses. Most of the ionic electroactive polymer-based tunable lenses are fabricated with ionic polymer-metal composite. So, the ionic electroactive polymer-based tunable lenses can be operated under low electric voltage. But small force, slow recovery time and environmental limitation for operation has been pointed to the disadvantage of the lenses. The non-ionic electroactive polymer-based tunable lenses are classified again into two categories: dielectric polymer-based tunable lenses and polyvinylchloride gel-based tunable lenses. The advantage of the dielectric polymer-based tunable lenses is fast response to electric stimuli. But the essential flexible electrodes degrade performance of the lens. Polyvinylchloride gel-based tunable lens has reported impressive performance without flexible electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.989-992
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• 2001

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1714-1716
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• 1998

The surface breakdown problem has plagued the development of high solid state for more than 30 years, but the physical basis for this flashover phenomenon is still not understood. The only way to overcome those problem and has a workable compact solid state switch is to passivate the surface by a solid state dielectric material, to coating/encapsulation the device in an insulting medium. In this paper, characteristics of flashover in high field Si-dielectric system behavior under high electric field is discussed.