• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.22 no.1
• /
• pp.168-172
• /
• 2013

In 3D wafer-stacking technology, one of the major issues is wafer warpage. Especially, The important reason of warpage has been known due to CTE(Coefficient of Thermal Expansion) mismatch between materials. It was too hard to choose how to make the FE model for blanket structured wafer level 3D packaging, because the thickness of each layer in wafer level 3D packaging was too small (micro meter or nano meter scale) comparing with diameter of wafer (6 or 8 inches). In this study, the FE model using the shell element was selected and simulated by the ANSYS WorkBench to investigate effects of the CTE on the warpage. To verify the FE model, it was compared by experimental results.

• Journal of Institute of Control, Robotics and Systems
• /
• v.5 no.6
• /
• pp.698-704
• /
• 1999

There are several types of defects of SMDs mounted on PCB, that is, missing components, misalignment, wrong parts and poor solder joints. This research study mainly focuses on measuring of deviation of SMD leads using the partial image of component, not using the full image. This processing based on the partial image has the advantage of the reduction in calculation time compared to the full image. Since position of lead is calculated with respect of the reduction in calculation time compared to the full image. Since position of lead is calculated with respect to pad, the accuracy of the system is not dependent on percise positioning stage. The grabbed image of gray scale is converted into binary format using a cutomatic threshold. After small fragments in the image is removed by a series of morphology operations such as opening and closing, the centroids of PCB pads and SMD leads is obtained together with labeling of blobs. Translational shift and rotationial angle of SMD are succedingly estimated using above information and chip data. The expression that can calculate the maximum deviation of leads with respect to PCB pads has been derived, and inferior mounting of SMD is judged by a given criterion. Some experiments have been executed to verify this measuring scheme.

• Progress in Superconductivity
• /
• v.3 no.1
• /
• pp.104-110
• /
• 2001

Since the strand-to-strand type joint far CICC (Cable-In-Conduit Conductor) is small in size and has low DC resistance, it is expected to be useful type fur a superconducting magnet system which had a compact structure like the KSTAR (Korea Superconducting Tokamak Advanced Research) coil system. The DC resistance is changed according to the distribution patterns of strands in cables connected together in the joint. A commercial code was used for the calculation of the DC resistance. With the decrease of outer diameter of the Joint, Which means the increase of strand volume fraction in the joint, the calculated DC resistance decrease rapidly and non-lineally. The variation of resistance depends mainly on the volume fraction of solder which has higher resistivity than copper. The resistance decrease inversely with the increase of the length of the joint. The resistance increase with increase of number of triplets in each stack contacted with that of another terminal cable. In case of the strand-to-strand joint that has 62mm of outer diameter, 52mm of inner diameter, 100mm of overlap length, and four triplets in each stack, the calculated DC resistance is less than 1 n-Ohm.

• Current Photovoltaic Research
• /
• v.5 no.3
• /
• pp.83-88
• /
• 2017

The growth of intermetallic compounds is an important factor in the reliability of solar cells. Especially, the temperature change in the soldering process greatly affects the thickness of the intermetallic compound layer. In this study, we investigated the intermetallic compound growth by Sn-diffusion in solder joints of solar cells. The thickness of the intermetallic compound layer was analyzed by IR lamp power and hot plate temperature control, and the correlation between the intermetallic compound layer and the adhesive strength was confirmed by a $90^{\circ}$ peel test. In order to investigate the growth of the intermetallic compound layer during isothermal aging, the growth of the intermetallic compound layer was analyzed at $85^{\circ}C$ and 85% for 500 h. In addition, the activation energy of Sn was calculated. The diffusion coefficient of the intermetallic compound layer was simulated and compared with experimental results to predict the long-term reliability.

• Environmental Engineering Research
• /
• v.22 no.2
• /
• pp.131-140
• /
• 2017

The use of electronic cigarettes (ECs) is recognized as a source of many pollutants, just like conventional cigarettes (CCs). The analysis of EC aerosol samples has confirmed the presence of various metallic species. Most of these metals originate from various parts of the cartomizer, e.g., solder joints, wires, and silicate beads. The metal concentration levels in EC samples were shown to be generally two to four orders of magnitude lower than those of CCs. However, the use of ECs can still pose significant human health hazards as consumers are exposed to the toxicity of those metals and many other hazardous pollutants released simultaneously via the vaping of ECs. The review also describes the detection and quantification of various metals in ECs and CCs. This review was carried out to assess the level of metal species released from ECs and to suggest proper guidelines to control consumer exposure.

• Journal of Welding and Joining
• /
• v.30 no.3
• /
• pp.38-43
• /
• 2012

In this study, active metal brazing methods for $ZrO_2$ and Ti alloy were discussed. To get a successful metal-ceramic bonding, various factors (melting temperature, corrosion, sag resistance, thermal expansion coefficient etc. of base materilas and filler metal) should be considered. Moreover, in order to clarify bonding between the metal and ceramic, the mechanism of the interfacial structure of the joints should be identified. The driving force for the formation of metal and ceramic interfaces is the reduction of the free energy which occurs when their contact becomes complete. Interfacial bonding depends on the material combinations and the bonding processes. This study describes the bonding between ceramic and metal in an active metal brazing.

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.4
• /
• pp.9-15
• /
• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.19 no.4
• /
• pp.269-279
• /
• 2003

This study investigated the mechanical properties of precious metal-ceramic alloy joined by the laser-welding and the soldering compared with the parent metal. Twenty-four tensile specimens were cast in precious metal-ceramic alloy and divided into three groups of eight. All specimens in the control group(group 1) were left in the as-cast condition. Group 2 and 3 were the test specimens, which were sectioned at the center. Eight of sectioned specimens were joined by soldering with a propane-oxygen torch, and the remaining specimens were joined by laser-welding. After joining, each joint diameter was measured, and then tested to tensile failure on an Instron machine. Failure loads were recorded, and then fracture stress(ultimate tensile strength), 0.2% yield strength and % elongation calculated. These data for three groups were subjected to a one-way analysis of variance(ANOVA). Neuman-Keuls post hoc test was then used to determine any significant differences between groups. The fracture locations, fracture surfaces were examined by SEM(scanning electron microscope). The results were as follows: 1) The tensile strength and 0.2% yield strength of the soldered group($280.28{\pm}49.35MPa$, $160.24{\pm}26.67MPa$) were significantly less than both the as-cast group($410.99{\pm}13.07MPa$, $217.82{\pm}17.99MPa$) and the laser-welded group($383.56{\pm}59.08MPa$, $217.18{\pm}12.96MPa$). 2) The tensile strength and 0.2% yield strength of the laser-welded group were about each 98%, 99.7% of the as-cast group. There were no statistically significant differences in these two groups(p<0.05). 3) The percentage elongations of the soldered group($3.94{\pm}2.32%$) and the laser-welded group($5.06{\pm}1.08%$) were significantly less than the as-cast group($14.25{\pm}4.05%$) (p<0.05). 4) The fracture of the soldered specimens occurred in the solder material and many porosities were showed at the fracture site. 5) The fracture of the laser-welded specimens occurred also in the welding area, and lack of fusion and a large void was observed at the center of the fracture surface. However, the laser-welded specimens showed a ductile failure mode like the as- cast specimens. The results of this study indicated that the tensile strengths of the laser-welded joints were comparable to those of the as-cast joints and superior to those of the soldered joints.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.37-45
• /
• 2004

Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.4
• /
• pp.7-15
• /
• 2000

The purpose of this work is to evaluate the solderahility and characteristics of solder joints. Bridge defect of solder joint was examined in natural atmosphere and $N_2$ condition. Consequently, wettability was excellent for each of Sn-Pb plated Cu specimen, Sn plated Cu specimen, and Cu polished in $N_2$ condition. The wetting time in $N_2$ condition was shorter than that of natural atmosphere condition, showing the decreasing values of about 0.2~0.45 seconds. The max. wetting force under the $N_2$ condition was more increasing that of natural atmosphere condition, showing the increasing values of about 1.8~2.8 N. With the result of wetting balance test, the wetting time ($t_2$) and wetting farce according to increasing amount of $N_2$ from 10 1/min to 30 1/min, the wetting time ($t_2$) was reduced about 0.25 second and wetting force was increased about 2.3 N. In non-cleaning flux, when $N_2$ gas is applied, it is compensated to decrease of wettability. In the case of using the $N_2$ gas, the wettability was improved. The reason for improving wettability is due to preventing the formation of dross. The generation rate of bridge in $N_2$ condition decreased than that of natural atmosphere, and when the specimen had a fine pitch, the rate of bridge defects was considerably decreased in $N_2$ condition, showing the decreasing rate of 25~75%.