• Journal of Astronomy and Space Sciences
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• v.5 no.1
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• pp.1-8
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• 1988

Electron beam propagation in a fully ionized plasma has been studied using a one-dimensional particle simulation model. We compare the results of electrostatic simulations to those of electromagnetic simulations. The electrostatic results show the essential features of beam-plasma interactions. It is found that the return currents are enhanced by the beam-plasma instability which accelerates ambinet plasmas. The results also show the heating of ambient plasmas and the trapping of plasmas due to the locally generated electric field. The electromagnetic simulations show much the same results as the electrostatic simulations do. The level of the radiation generated by the same non-relativistic beam is slightly higher than the noise level. We discuss the results in context in context of the heating of coronal plasma during solar flares.

• The Bulletin of The Korean Astronomical Society
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• v.25 no.2
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• pp.35-35
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• 2000

• The Bulletin of The Korean Astronomical Society
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• v.29 no.2
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• pp.32.1-32.1
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• 2004

• The Bulletin of The Korean Astronomical Society
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• v.25 no.1
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• pp.18-18
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• 2000

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.419-420
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• 2009

The authors fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell and the surface of crystalline Si wafer using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~80nm and an ave rage lattice constant of 100nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM) and the enhancement of solar cell efficiency will be presented.

• Journal of IKEEE
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• v.23 no.2
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• pp.350-357
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• 2019

We analyzed the system efficiency of small solar power plants with 80% of total solar power plants. The data of the solar power plant with installed capacity of 100kW was collected and the correlation of the ESS efficiency according to the capacity of the PCS and the battery of each power plant was deduced. As a result, the higher the C-rate value affecting the discharge rate of the battery, The discharge efficiency of the plasma display panel is increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.53.1-53.1
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• 2018

During a major solar eruption, the erupting plasma is possibly out of the equilibrium ionization state because of its rapid heating or cooling. The non-equilibrium ionization process is important in a rapidly evolving system where the thermodynamical time scale is shorter than the ionization or recombination time scales. We investigate the effects of non-equilibrium ionization on EUV and X-ray observations by the Atmospheric Imaging Assembly (AIA) on board Solar Dynamic Observatory and X-ray Telescope (XRT) on board Hinode. For the investigation, first, we find the emissivities for all the lines of ions of elements using CHIANTI 8.07, and then we find the temperature responses multiplying the emissivities by the effective area for each AIA and XRT passband. Second, we obtain the ion fractions using a time-dependent ionization model (Shen et al. 2015), which uses an eigenvalue method, for all the lines of ion, as a function of temperature, and a characteristic time scale, $n_et$, where $n_e$ and t are density and time, respectively. Lastly, the ion fractions are multiplied to the temperature response for each passband, which results in a 2D grid for each combination of temperature and the characteristic time scale. This is the set of passband responses for plasma that is rapidly ionized in a current sheet or a shock. We investigate an observed event which has a relatively large uncertainty in an analysis using a differential emission measure method assuming equilibrium ionization state. We verify whether the observed coronal plasmas are in non-equilibrium or equilibrium ionization state using the passband responses.