• 대한전자공학회논문지
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• 제21권1호
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• pp.62-70
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• 1984

비저항이 10Ω-cm, 두께가 13∼15mi1인 <111> oriented, p형 Si기판을 이용하여 N+PP+ BSF 전지와 에미터 영역이 N+N 고저 접합으로 이루어진 N+NPP+ HELEBSF(high low emitter bach surface field) 전지를 설계 제작하였다. 접합형 태양전지의 에미터 영역에서 고저 접합구조가 효율 개선에 미치는 영향을 검토하기 위해 HLEBSF 전지의 N영역을 제외하고는 같은 마스크와 동시 공정을 통해 N+PP-전지와 N+NPP+ 전지의 가영역에서 물리적 파라미터들(불순물 농도, 두께)을 동일하게 만들었다. 100mW/㎠의 인공조명에서 측정한 결과 N+PP+ 전지들의 전면적 (유효 수광면적) 평균 변환효율이 10.94%(12.16%)이었고, N+NPP+ 전지들의 평균 변환효율은 12.07% (13.41%)로 나타났다. N+NPP+ 전지의 효율개선은 N+N-고저 접합 에미터 구조가 N+ 에미터 영역에서 나타나는 heavy doping effects를 제거함으로써 에미터 재결합 전류의 증가를 억제하고 나아가 개방전압(Voc)과 단락전류(Ish)의 값을 증가시켜 준 결과로 볼 수 있다.

• 한국표면공학회지
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• 제51권2호
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• pp.116-125
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• 2018

Aluminum-doped zinc oxide (AZO) is a commonly used material for the front contact layer of chalcopyrite $CuInGaSe_2$ (CIGS) based thin film solar cells since it satisfies the requisite optical and electrical properties with low cost and abundant elemental availability. Low-resistivity and high-transmission front contacts have been developed for high-performance CIGS solar cells, and nearly meet the required performance. However, the durability of the cell especially for the corrosion resistance of AZO films has not been studied intensively. In this work, AZO films were prepared on Corning glass 7059 substrates by radio frequency magnetron sputtering depending on the hydrogen content. The electrical and optical properties and electrochemical corrosion resistance of the AZO films were evaluated as a function of the hydrogen content. With increasing hydrogen content to 6 wt%, the crystallinity, crystal size, and surface roughness of the films increased, and the resistivity decreased with increased carrier concentration, Hall mobility, oxygen vacancies, and $Zn(OH)_2$ binding on the AZO surface. At a hydrogen content of 6 wt%, the corrosion resistance was also relatively high with less columnar morphology, shallow pore channels, and lower grain boundary angles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• 한국재료학회지
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• 제22권10호
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• pp.531-538
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• 2012

Hollow silica spheres were prepared by spray drying of precursor solution of colloidal silica. The precursor solution is composed of 10-20 nm colloidal silica dispersed in a water or ethanol-water mixture solvent with additives of tris hydroxymethyl aminomethane. The effect of pH and concentrations of the precursor and additives on the formation of hollow sphere particles was studied. The spray drying process parameters of the precursor feeding rate, inlet temperature, and gas flow rate are controlled to produce the hollow spherical silica. The mixed solvent of ethanol and water was preferred because it improved the hollowness of the spheres better than plain water did. It was possible to obtain hollow silica from high concentration of 14.3 wt% silica precursor with pH 3. The thermal conductivity and total solar reflectivity of the hollow silica sample was measured and compared with those values of other commercial insulating fillers of glass beads and $TiO_2$ for applications of insulating paint, in which the glass beads are representative of the low thermal conductive fillers and the $TiO_2$ is representative of infrared reflective fillers. The thermal conductivity of hollow silica was comparable to that of the glass beads and the total solar reflectivity was higher than that of $TiO_2$.

• 한국가스학회지
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• 제26권5호
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• pp.35-40
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• 2022

태양광 전지 제조 설비인 PCVD(Plasma Chemical Vapor Deposition)는 NH₃, SIH₄, O₂를 Chamber에 주입하여 생성된 Plasma를 Wafer에 증착시키는 설비이다. PCVD설비에서 Gas 이동과 주입이 Gas Cabinet에서 이루어지며, 내부에는 MFC, Regulator, Valve, Pipe 등이 복잡하게 연결되어 많은 누출 점이 존재한다. 폭발 상한값(UEL) 33.6%, 폭발 하한값(LEL) 15%의 NH₃ 누출 시 폭발을 예방하기 위해서는 NH₃ 농도가 폭발 범위에서 벗어날 수 있는 희석능력이 있어야 한다. 본 연구는 기존 PCVD의 Gas Cabinet에 대한 NH₃ Gas 누출 시 희석능력을 3D와 수치로 확인할 수 있는 CFD 분석 기법을 활용하여 분석하였다. 그 결과 중희석에 해당되며 설비 개선을 통해 고환기가 가능하다는 결론을 얻었다.

• 한국식품영양과학회지
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• 제42권10호
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• pp.1664-1672
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• 2013

천일염은 자연 환경에서 제조되기 때문에 불용분 사분과 같은 이물이 함유될 가능성이 있다. 본 연구는 여과와 증발을 통하여 소금의 불순물 등 이물질을 효율적으로 제거하면서도 미네랄이 풍부한 소금을 생산하기 위해 수행되었다. 함수를 여과한 후 $90^{\circ}C$에서 회전식진공농축기를 이용하여 소금결정을 제조한 후에 탈수하였다. 이렇게 제조된 소금을 천일식제조소금이라 명명하였다. 소금의 수율은 물의 증발량에 의해 결정되는데, 증발량이 40%, 50%, 60%일 때 각각 40S, 50S, 60S로 표기하였다. 천일식제조소금의 수율은 40S, 50S, 60S가 각각 7.22%, 10.79%, 15.06%로 일반 천일염의 제조 수율인 4~8%보다 유사하거나 높았다. 천일식제조소금의 염도는 40S, 50S, 60S가 각각 90.38%, 91.16%, 68.16%를 나타냈다. 관능검사 결과 전체기호도가 가장 높은 소금은 40S이며, 쓴맛이 강함 소금은 60S를 나타냈다. Na, Mg, K, Ca의 미네랄 함량은 40S와 50S가 Mg 함량이 낮다는 것을 제외하면 천일염과 유사하였다. 불용분 함량은 천일염이 0.023%로 천일식제조소금보다 높고, 사분분석 함량은 천일염과 40S, 50S는 유의차가 없었다. 용해속도(g of salt/100 mL $H_2O$/sec)는 40S, 50S, 60S가 각각 0.69, 0.70, 0.69로 천일염의 용해속도(0.47)보다 높았고, 상대습도 70%, 저장온도 $20^{\circ}C$에서의 수분 재흡수 속도는 천일식제조소금 40S, 50S가 정제염보다는 빠르지만 천일염보다는 약 3~5배 낮은 결과를 보여주었다. 본 연구에서 개발한 천일식제조소금은 미네랄, 불순물 함량, 용해속도 및 수분 재흡수 등의 물리화학적 특성이 천일염에 비해 우수한 것으로 판단된다.

• Korean Chemical Engineering Research
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• 제44권2호
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• pp.179-186
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• 2006

$TiO_2$를 나노튜브(nanotube)와 나노입자(nanoparticle)의 두 가지 형태로 제조하여 닥터 브레이드 방법과 $450^{\circ}C$에서의 소결 공정을 통하여 다공성막으로 제조하였다. 이 다공성막을 작용물질로 사용하여 염료감응형 태양전지를 제조하고 그 특성을 조사하였다. $TiO_2$ 나노입자는 수소화 티탄염 나노튜브를 $180^{\circ}C$에서 24시간 동안 가수열분해 처리함으로써 합성하였다. 이 $TiO_2$ 나노입자를 다공성막으로 사용하여 제작한 염료감응형 태양전지의 에너지 효율(${\eta}$)은 8.07％이며, 개방전압(open-circuit potential, $V_{OC}$), 단락전류(short-circuit current, $I_{SC}$)와 fill factor(FF) 값은 각각 0.81 V, $18.29mV/cm^2$와 66.95％이었다. 나노튜브 $TiO_2$를 제조할 경우에는 NaOH 용액의 농도를 3M과 5M로 변화시켰다. 그 결과 3M NaOH 용액에서 합성된 나노튜브 $TiO_2$를 다공성막으로 사용하여 제작된 염료감응형 태양전지의 에너지 효율(${\eta}$)은 6.19％이었으며, $V_{OC}$, $IV_{SC}$와 FF 값은 각각 0.77 V, $12.41mV/cm^2$와 64.49％이었다. 반면에 5 M NaOH에서는 전자이동성이 좋지 않아 효율이 4.09％로 감소하였다. 본 연구 결과 가수열분해법에 의해 제조한 $TiO_2$ 나노입자로 제조한 염료감응형 태양전지의 효율이 가장 높았다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• 생물환경조절학회지
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• 제14권4호
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• pp.245-253
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• 2005

계절별로 EC를 달리하여 처리한 결과, EC농도는 급액보다 배액이 높았고 EC를 높게 급액하면 급배액간의 농도차가 많았으며 pH는 급액 EC가 높을수록 배액의 pH가 낮았다. 장미품질은 절화장, 경경, 엽수, 화고, 화폭과 같은 장미의 품질에는 차이가 없었다. 수량은 4월과 5월에 EC 1.3으로 공급한 처리에서 $6\%$ 정도 많았고, 6, 7, 8월에는 EC 1.0으로 공급한 처리에서 $10\%$정도 많았다. 또한 9월과 10월에는 EC 1.0과 1.3으로 공급한 처리에서 수량이 $10\%$정도 많았다. 전체적으로는 EC를 봄에는 1.3,여름에는 1.0, 가을에 1.3, 그리고 겨울에 1.64로 조절한 (B)처리가 수량이 가장 많았다.