• 공업화학
• /
• 제30권4호
• /
• pp.499-503
• /
• 2019

GaInP/GaAs 양자우물(quantum well)구조를 N-AlGaInP/p-GaInP 이종 접합구조 태양전지에 도입하여 그 특성을 조사하고 양자우물구조가 없는 태양전지와 비교하였다. 에피층은 (100)평면이 (111)A 방향으로 $6^{\circ}$ 기울어진 p-GaAs 기판 위에 성장하였다. 태양전지 박막구조는 두께 400 nm의 N-AlGaInP 층에 590 nm의 p-GaInP와 210 nm의 GaInP/GaAs 양자 우물 구조(10 nm GaInP/5 nm GaAs의 14겹 구조)가 도입된 양자우물 태양전지 구조와 800 nm의 p-GaInP의 단일이종접합 구조로 이루어진다. 측정결과 $1{\times}1mm^2$의 태양전지에서 단락전류밀도($J_{sc}$)는 양자우물구조가 도입된 태양전지에서는 $9.61mA/cm^2$, 양자우물 구조가 없는 태양전지에서는 $7.06mA/cm^2$가 각각 측정되었다. 이차이온질량 분석법(SIMS)과 외부양자효율(external quantum efficiency) 측정을 통하여 단락전류 증가에 의한 효율증가가 흡수 스펙트럼의 확대가 아닌 양자우물에 의한 carrier 재결합의 억제에 의한 효과임을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.72-72
• /
• 2011

Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 추계학술대회 논문집
• /
• pp.346-346
• /
• 2009

For high efficiency hetero junction solar cell over 20%, good silicon wafer passivation is one of the most important technological factor. Compared to the conventional PECVD technique, HWCVD has appeared as an promising alternative for high quality passivation layer formation. In this work, HWCVD passivation layer characteristics have been intensively investigated on wafer surface treatment, Hydrogen density in deposited thin layer and thermal effects in deposition process. Comprehensive results of the individual process factors on interface passivation has been discussed and resultant silicon hetero junction solar cell characteristics has been investigated.

• 대한전자공학회논문지
• /
• 제17권6호
• /
• pp.65-71
• /
• 1980

SRO2-Si 이종접합 태양전지소자틀 진공증착에 의하여 제작하여 SRO2를 Si기판위에 증착후 실기중에서의 열처리(소둔)가 태양전지소자의 특성 특히 단락전류와 개방단자전압에 미치는 영향을 실험적으로 검토하여 이 열처리온도에 최적치가 있음을 알았다. 이 최적온도는 Si기액의 고유저항에 따라 차이가 있으며 고유저항이 비슷한 경우는 N형과 P형 Si 기판에 따르는 큰 차이는 없으나 같은 P형 Si기판인 경우에는 고유저항이 낮은 쪽의 최적온도가 높은 것으로 나타났다.

• Transactions on Electrical and Electronic Materials
• /
• 제13권2호
• /
• pp.98-101
• /
• 2012

I studied the stability of organic photovoltaic cells in terms of P3HT:PCBM-71 blend ratio as a function of storage time. I obtained the best cell performance by optimizing the blend ratio of electron donor and electron acceptor within the active layer. In this study, I found that the more the P3HT:PCBM ratio increases within the active layer, the more the cell efficiency decreases as the storage time increases. As a result, the best optimized blend ratio was the 1:0.6 ratio of P3HT:PCBM-71, and cell efficiency of the device with the 1:0.6 blend ratio was 4.49%. The device with the best cell efficiency showed good stability.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.74-74
• /
• 2011

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting C60 derivatives are mixed together. In the BHJ system the electron donating polymer and electron accepting C60 derivatives are blended. The blended system causes charge recombination at the interface between the BHJ active layer and electrode. To reduce the charge recombination at the interface, it is needed to use an interlayer that can selectively transfer electrons or holes. We have developed solution processable wide band gap inorganic interfacial layers for polymer solar cells. The effect of interlayers on the performance of polymer solar cell was investigated for various types of conjugated polymers. We have found that inorganic interfacial layers enhanced the solar cell efficiency through the reduction of charge recombination at the interface between active layer and electrode. Furthermore, the stability of the polymer solar cell using the interlayer was significantly improved. The efficiency of 6.5% was obtained from the PTB7:PCBM70 based solar cells utilizing $TiO_2$nanoparticles as an interlayers.

• 한국정보통신학회논문지
• /
• 제14권7호
• /
• pp.1647-1652
• /
• 2010

CdTe 및 Cu(In,Ga)$Se_2$ 박막 태양전지의 창층으로 널리 이용되는 CdS에서 Cd의 일부를 Zn으로 치환하면 두 물질 사이의 전자 친화력의 정합이 향상되고 에너지 밴드 갭이 증가하여 개방전압 및 광전류를 증가시킬 수 있다. 본 연구에서는 태양전지와 같은 광전소자에 적용되는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 접합에서의 전류 전도기구를 조사하기 위해 온도에 따른 전류-전압 특성을 분석하였다. CdS/CdTe 접합의 전류 흐름은 계면 재결합과 터널링의 조합에 의해 조절되지만 CdZnS/CdTe 접합의 경우 상온 이상의 온도에서는 공핍층에서의 생성/재결합, 상온 이하의 온도에서는 누설 전류나 터널링에 의해 전류 흐름이 제한됨을 알 수 있었다.

• Current Photovoltaic Research
• /
• 제6권4호
• /
• pp.102-108
• /
• 2018

A glass-texturing technique was developed for photovoltaic (PV) module cover glass; periodic honeycomb textures were formed by using a conventional lithography technique and diluted hydrogen fluoride etching solutions. The etching conditions were optimized for three different types of textured structures. In contrast to a flat glass substrate, the textured glasses were structured with etched average surface angles of $31-57^{\circ}$, and large aspect ratios of 0.17-0.47; by using a finite difference time-domain simulation, we show that these textured surfaces increase the amount of scattered light and reduce reflectance on the glass surface. In addition, the optical transmittance of the textured glass was markedly improved by up to 95% for wavelengths ranging from 400 to 1100 nm. Furthermore, applying the textured structures to the cover glass of the PV module with heterojunction with intrinsic thin-layer crystalline silicon solar cells resulted in improvements in the short-circuit current density and module efficiency from 39 to $40.2mA/cm^2$ and from 21.65% to 22.41%, respectively. Considering these results, the proposed method has the potential to further strengthen the industrial and technical competitiveness of crystalline silicon solar cells.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2008년도 추계학술대회 논문집
• /
• pp.104-104
• /
• 2008

• Transactions on Electrical and Electronic Materials
• /
• 제9권2호
• /
• pp.73-78
• /
• 2008

We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of $100\;mm\;{\times}\;100\;mm$, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.