• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.335-340
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• 1992

Undoped PbTiO3 ceramics was successfully prepared by using sol-gel process, which had not been fabricated due to its microcracks created by anisotropic stress during phase transition from cubic to tetragonal phase. Fabrication of undoped PbTiO3 ceramics via sol-gel processing was very much affected by the PbO content of the samples as well as PbO vapor from sintering atmosphere. Excess PbO was found to promote rapid grain growth in PbTiO3 ceramics. After sintering at 1100$^{\circ}C$ average grain size of PbTiO3 ceramics with excess PbO was about 8 times greater than that of stoichiometric composition, which may be due to PbO liquid phase from excess PbO.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.99-102
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• 1998

Cordierite ceramics with low dielectric constants were obtained through sol-gel techniques using as metal alkoxides. The powders for the sintered cordierite ceramics were prepared by hydrolysis of metal alkoxides with ethanol and distilled water. In the hydrolysis, the mole ratio of HCI/TEOS was controlled by changing the amount of HCI as a catalyst. The sol-gel derived powders were dried, pressed, and fired at $1300^{\circ}C$. The dried powders were calcined at $800{\circ}C$ for 3hours to remove residual organics. The fired bodies with different dielectric constants were obtained by using HCI adjusted to various mole ratios of HCI/TEOS in the process. The variation of the amount of HCI catalyst led to a significant influence on dielectric contant, which was attributed to the formation of pores in the sintered body. Especially, the porosity of the sintered body influenced the dielectric constants.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.4
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• pp.363-370
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• 2001

In this study, TiO$_2$, the popular photocatalyst, was used to decompose ethanol. TiO$_2$was prepared by the sol -gel method and coated on pyrex stick. A 15W, UV-A lamp was used as the UV light source and il gas chromatography (HP 5890) was used to confirm the concentrations of ethanol, $CO_2$and the intermediates. Variation of preparation parameters and calcination temperature for TiO$_2$photocatalysts in the sol -gel method caused changes of ethanol decomposition activity. The best ethanol photodecomposition activity was obtained on the sample when prepared with 0.14 mol of HCI, a mol of ethanol and 1.3 mol of TTIP ware mixed in sol-gel process and calcinated at 50$0^{\circ}C$ for 3 hours. Acetaldehyde was detected as an intermediate and decomposed to carbon dioxide and water at the end of the reaction.

• Journal of Powder Materials
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• v.22 no.5
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• pp.309-314
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• 2015

Tungsten trioxide thin films are successfully synthesized by a sol-gel method using tungsten hexachloride as precursors. The structural, chemical, and optical properties of the prepared films are characterized by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometry. The electrochemical and electrochromic properties of the films before and after heat treatment are also investigated by cyclic voltammetry, chronoamperometry, and in situ transmittance measurement system. Compared to as-prepared films, heat-treated tungsten trioxide thin films exhibit a higher electrochemical reversibility of 0.81 and superior coloration efficiency of $65.7cm^2/C$, which implies that heat treatment at an appropriate temperature is a crucial process in a sol-gel method for having a better electrochromic performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.315-318
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• 2001

The optical and dielectric properties of TiO$_2$ thin films prepared with mixtures of Epoxy, bits-(4, 4'-p-toluenesulfonylacidic isoproplylidene)-cyclohexadiol and UVI 6990 in dry sol-gel process were investigated. The absorption peak of the films was showed at 360nm. Photocurrent of the thin films doped with 50 wt% of TiO$_2$was higher than that of nondoped thin films. Energy gap was lowered from 3.6 to 3.3 eV with increasing amount of TiO$_2$. Relative dielectric constants of samples were 1.5 to 3 and showed a characteristics of lower dielectric materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.245-246
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• 2006

A propyl alcohol based sol-gel method was used as to replace the 2-methoxyethanol with 1,1,1 tris (hydroxymethyl) ethane for preparation of pzt piezoelectric ceramic. The powder obtained by this sol-gel process were calcined at $900^{\circ}C$ and followed by the sintering at $1100^{\circ}C$ for ca2 hrs as to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology were determined by high resolution scanning electronmicroscopy. Further, the prepared small sized pzt thin powders are likely to be used m various applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.332-342
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• 1995

The important factors of reaction conditions in sol-gel transition of silicon alkoxide solution have been reviewed and discussed on the basis of Raman study. Various factors such as type of catalyst, alkoxide, solvent, drying control chemical additive and water content affect the conversion mechanism in sol-gel process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.15-18
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• 2012

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.237-241
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• 1998

In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.