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http://dx.doi.org/10.4313/JKEM.2008.21.6.552

The Effect of Pb Mol Ratio in PbZrO3 Thin Films made by Sol-Gel Method  

Bae, Se-Hwan (동아대학교 물리학과)
Jin, Byung-Moon (동의대학교 물리학과)
Kim, Sung-Dae (동명대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.6, 2008 , pp. 552-555 More about this Journal
Abstract
The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.
Keywords
Thin film; Sol-gel method; Antiferroelectrics; Hysteresis loop;
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