1 |
H. Adachi, T. Mitsuyu, O. Yamazaki, and K. Wasa, "Ferroelectric epitaxial thin films on sapphire grown by rf-palanar magnetron sputtering", Japanese Journal of Applied Physics, Vol. 60, p. 736, 1986
DOI
|
2 |
S. Yamamichi, T. Sakuma, K. Takemura, and Y. Miyasaka, " thin film preparation by ionbeam sputtering and its dielectric properties", Japanese Journal of Applied Physics, Vol. 30, p. 2193, 1991
DOI
|
3 |
V. J. Tennery, "High-temperature phase transitions in ", Journal of American Ceramic Society, Vol. 49, p. 483, 1966
DOI
|
4 |
박창엽, "압전세라믹스", 김영출판사, p. 3, 1987
|
5 |
E. Sawaguchi, G. shirane, and Y. Tagaki, "Phase transition in lead zirconate", Journal of the Physical Society of Japan, Vol. 6, p. 333, 1951
DOI
|
6 |
H. Nakazawa, H. Yamane, and T. Hirai, "Metalorganic chemical vapor deposition of films on MgO(100)", Japanese Journal of Applied Physics, Vol. 30, p. 2200, 1991
DOI
|
7 |
K. Abe, H. Tomita, H. Toyoda, M. Imai, and Y. Yokote, "PZT thin film preparation on Pt-Ti electrode by rf sputtering", Japanese Journal of Applied Physics, Vol. 30, p. 2152, 1991
DOI
|
8 |
E. Sawaguchi, H. Maniwa, and S. Hoshino, "Antiferroelectric structure of lead zirconate", Physical Review, Vol. 83, p. 1078, 1951
|
9 |
F. Jona, G. Shirane, F. Mazzi, and R. Pepinski, "X-ray and neutron diffraction study of antiferroelectric lead zirconate, ", Physical Review, Vol. 105, p. 849, 1957
DOI
|
10 |
I. Taguchi, A. Pignolet, L. Wang, M. Proctor, F. Levy, and P. E. Schmid, "Raman scatterig study of lead zirconate thin films prepared on sillicon substrates by radio frequency magnetron sputtering", Japanese Journal of Applied Physics, Vol. 74, p. 6625, 1993
DOI
ScienceOn
|
11 |
김성대, 전기범, 박철우, "Sol-Gel법으로 제작된 결정 박막의 열처리 효과" 한국통신학회논문지, 32권, 2T호, p. 55, 2007
|
12 |
T. Tani, J.-F. Li, D. Viehland, and D. A. Payne, "Antiferroelectric switching and induced strains for sol-gel derived lead zirconate thin layers", Japanese Journal of Applied Physics, Vol. 75, p. 3017, 1994
DOI
ScienceOn
|
13 |
T. Imai, M. Okuyama, and Y. Hamakawa, " thin films deposited by laser ablation", Japanese Journal of Applied Physics, Vol. 30, p. 2163, 1991
DOI
|