• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.558-564
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• 2012

We fabricated Ga doped ZnO (GZO) thin films on the glass substrate (Eagle 2000) with various of Ga doping concentration and annealing temperatures using sol-gel method, electrical and optical properties were investigated. When the GZO thin films doped with 1 mol% of Ga and annealed at $600^{\circ}C$, the excellent (002) orientation was observed. In the results of Hall measurement, carrier concentration decreased and resistivity increased due to segregation effect with increasing of the Ga doping concentration. The largest carrier concentration and lowest resistivity were $9.13{\times}10^{18}cm^{-3}$ and $0.87{\Omega}cm$, respectively, in the GZO thin films doped with 1 mol% Ga and annealed at $600^{\circ}C$. All films is higher than 80 % in the visible light region. Energy band gap narrowing due to Burstein-Moss effect was observed with increasing of Ga doping concentration from 1 to 4 mol%.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.755-760
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• 1996

Sol-gel processing was used to prepare PZT fibers. Titanium isopropoxide Zirconium n-butoxide and lead acetate trihydrate were used as starting materials and TEA(triethanolamine) was added to form stabilized Pb-Ti-Zr complex alkoxide, Effects of catalysts and various solvents on the state of precursor sol gelation reaction fiber spinnability pyrolysis and crystallization were also investiated.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Solar Energy
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• v.12 no.2
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• pp.18-27
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• 1992

Multilayer coatings of $WO_3$ were deposited by the sol-gel technique on microscope slide glass and ITO coated glass. These films were characterized optically, chemically, and structurally by XRD, spectro-photometry, DTA/TGA, SEM/EDAX and RBS. Uniform $WO_3$ sol-gel films were dip coated on slide glass at dipping speed of 5mm/s. This sample indicated a low near IR transmittance in optical properties as a result of coloration using a dilute HCI electrolyte as the $H^+$ion sources. Differential thermal analysis results have allowed the accurate determination of the formation temperature of the $WO_3$ crystalline phase from the gel data in the range of $380^{\circ}C{\sim}500^{\circ}C$, consistent with crystallization temperature of sol-gel film. RBS spectrometry was performed on the uncolored $WO_3$ sol-gel film, yielding a chemical composition of $WO_3$.

• Journal of Powder Materials
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• v.23 no.6
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• pp.442-446
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• 2016

The sol-gel method is the simplest method for synthesizing monodispersed silica particles. The purpose of this study is to synthesize uniform, monodisperse spherical silica nanoparticles using tetraethylorthosilicate (TEOS) as the silica precursor, ethanol, and deionized water in the presence of ammonia as a catalyst. The reaction time and temperature and the concentration of the reactants are controlled to investigate the effect of the reaction parameters on the size of the synthesized particles. The size and morphology of the obtained silica particles are investigated using transmission electron microscopy and particle size analysis. The results show that monodispersed silica particles over a size range of 54-504 nm are successfully synthesized by the sol-gel method without using any additional process. The nanosized silica particles can be synthesized at higher TEOS/$H_2O$ ratios, lower ammonia concentrations, and especially, higher reaction temperatures.

• Journal of Environmental Science International
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• v.30 no.6
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• pp.501-505
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• 2021

V₂O₅-TiO₂ catalysts were prepared by various methods. V₂O₅-TiO₂ were prepared by sol-gel method with different drying conditions (aerogel and xerogel), and V₂O₅ supported on TiO₂ obtained by sol-gel method with precipitation-deposition method and impregnation method. The performance of the V₂O₅-TiO₂ catalysts was investigated for the selective oxidation of hydrogen sulfide in the stream containing both ammonia and excess water. All the catalysts showed good dispersion of vanadium and they had high H₂S conversion with no or little production of sulfur dioxide. The V₂O₅-TiO₂ aerogel catalyst prepared by sol-gel method with drying under super critical condition had the highest surface area which led to better catalytic activity compared to those by other synthesis methods.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1223-1230
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• 1996

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.80-80
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• 2007

• Proceedings of the Korean Society of Rheology Conference
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• 2001.09a
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• pp.156.6-157
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• 2001

(No abstract, see full-text)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.468-473
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• 1998

Sol-gel법을 이용하여 PbTiO3에 La을 10mol% 도핑한 박막을 bare Si(100)-wafer 위에 스핀 코팅법을 이용하여 제조하였다. 제조된 박막의 열처리 온도에 따른 결정화 거동을 살펴보고, 씨앗층(seeding layer)을 도입하여 박막의 미세구조 및 배향성을 SEM과 XRD로 관찰하였다. 씨앗층없이 일반적으로 제조된 박막의 경우는 우선 배향성을 나타내지 않았으나, 씨앗층을 도입한 경우에는 씨앗층의 두께 및 열처리 시간에 따라 막의 배향성이 달라졌다.