• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.457-460
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• 1994

Dependence of saturation energy density and small signal gain coefficient on the active gas pressure in XeCl laser amplifier has been investigated. The saturation energy density was increased almost linearly as 1.3, 1.45, 2.0, and $2.3mJ/\textrm{cm}^2$ when the pressure of Xe and He were 30 and 2000 mb, and the pressure of HC] was varied as 34, 52, 73, and 92 mb. Whereas the small signal gain coefficient was measured to be 6.5, 7.5, 7.0, 7.0 %/cm, which shows that the small signal gain did not varies not so much.o much.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.1149-1152
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• 1999

A gain controllable precision full-wave rectifier for the measurements of small-signal voltage is presented. It consists of gain controllable inverter superdiode and noninverter superdiode. The results of simulation with PSpice and experiment on breadboard show that the proposed rectifier has the characteristic of precise rectification and amplification for small signal voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.377-387
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• 2012

An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.768-776
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• 2014

Using a simplified high-frequency small-signal equivalent circuit model for BSIM3 MOSFET, the fully differential two-stage folded-cascode CMOS operational amplifier is analyzed to obtain its small-signal voltage transfer function. As a result, the expressions for dc gain, five zero frequencies, five pole frequencies, unity-gain frequency, and phase margin are derived for op amp design using design equations. Then the analysis result is verified through the comparison with Spice simulations of both a high speed op amp and a low power op amp designed for the $0.13{\mu}m$ CMOS process.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.6
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• pp.60-65
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• 2002

The purpose of this study is to measure and compare the output power characteristics and optical gain for selenium vapour laser depending on the He gas purity. The purity of the He gas was improved with a special He-filter. During the measurement the individual wavelengths were selected with a birefringent filter. The result shows that compared with those of laser without He-filter, the output-coupling power and small signal gain of laser with He-filter increase in the most of the lines. Especially, the output-coupling power and small signal gain for the strong lines (497.6 nm, 499.3 nm, 506.9 nm, 517.6 nm, 522.8 nm, 530.5 nm), blue(460.4 nm, 464.8 nm) and red(644.4 nm 649.1 nm) lines lies notably higher.

• Korean Journal of Optics and Photonics
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• v.11 no.2
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• pp.114-118
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• 2000

The paper presents the effects of outpLlt-coLLpling power and small SIgnal gain of a He-Se+ laser by discharge of either $^4He$ or $^3He$. A quartz plane-plate was installed to outpLlt-coLlple the laseI beam from the resonator in the eAperimental setup. The result shows tbat compared with those of ~He, tbe outPLlt-coupling power and small-signal gain of $^4He$ increase in the most of the lines. EspeCIally, the small-signal gain of $^3He$ for the strong lines (497.6 nm, 499.3 nm, 506.9 urn, 5176 nm, 522.8 mn, 530.5 nm) lies 25% higher than Ulat of 4He, and the output-coupling power doubles oubles

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.2
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• pp.16-22
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• 2004

The paper presents the effects of output-coupling power and small signal gain of selenium vapour multiline laser by discharge of either to $^4$He or $^3$He. The purity of the He gas was improved with a special He-fille.. The result shows that compared with those of $^4$He, the output-coupling power and small-signal gain of $^3$He increase in the most of the lines. Especially, the small-signal gain of $^3$He for the strong lines (497.6 nm, 499.3 nm, 506.9 nm, 517.6 nm, 522.8 nm, 530.5 nm) lies about 30% higher than that of $^4$He, and the output-coupling power from doubles to triples.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.164-171
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• 1996

We report the experimental resutls on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base structure. To characterize the output power, load-pull mehtod was employed. By characterizing the devices with HP8510C, we extracted the small-signal equivalent circuit. The HBTs were fabricated employing wet mesa etching and lift-off process of ohmic metals. the implementation of polyimide into the fabriction process was accomplished to obtain the lower dielectric constant resultig in significant reduction of interconnect routing capacitance. The fabricated HBTs with an emitter area of 6${\times}14{\mu}m^{2}$ exhibited current gain of 45, BV$_{CEO}$ of 10V, cut-off frequency of 30GHz and power gain of 1 3dBm. To extract the small signal equivalent circuit, the de-embedded method was applied for parasitic parameters and the calculation of circuit equations for intrinsic parameters.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.657-662
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• 2014

We demonstrate a simulation of a parallel hybrid fiber amplifier in the C+L-band with a gain controlling technique. A variable optical coupler is used to control the input signal power for both EDFA and RFA branches. The gain spectra of the C+L-band are flattened by optimizing the coupling ratio of the input signal power. In order to enhance the pump conversion efficiency, the EDFA branch was pumped by the residual Raman pump power. A gain bandwidth of 60 nm from 1530 nm to 1590 nm is obtained with large input signal power less than -5 dBm. The gain variation is about 1.06 dB at a small input signal power of -30 dBm, and it is reduced to 0.77 dB at the large input signal power of -5 dBm. The experimental results show close agreement with the simulation results.

• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.130-134
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• 1995

A small signal gain coefficient of Nd:glass was measured and a cavity-dumped laser was constructed. To measure the small signal gain coefficient, we constructed a resonator consisting of Nd:glass, Pockels cell, polarizing beam splitter. The measured small signal gain coefficient was $0.088 cm_{-1}$ when the input energy was 100 J and the round-trip internal loss of the resonator was 56%. The cavity-dumped laser was constructed using Nd:glass. 2 m radius of curvature HR-mirrors, Pockels cell, polarizinig beam splitter and $\lambda/4$ plate. The output energy of cavity-dumped laser was 0.85 J at 140 J input energy and the laser pulse width was 8 ns.s 8 ns.