• 제목/요약/키워드: slurry stability

검색결과 121건 처리시간 0.031초

계면활성제가 반도체 실리콘 CMP용 슬러리의 분산안정성에 미치는 영향 (Effect of Surfactant on the Dispersion Stability of Slurry for Semiconductor Silicon CMP)

  • 윤혜원;김도연;한도형;김동완;김우병
    • 한국분말재료학회지
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    • 제25권5호
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    • pp.395-401
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    • 2018
  • The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

연마 Recycling 시간에 따른 콜로이드 실리카 슬러리의 안정성 및 연마속도 (Effect of Recycling Time on Stability of Colloidal Silica Slurry and Removal Rate in Silicon Wafer Polishing)

  • 최은석;배소익
    • 한국세라믹학회지
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    • 제44권2호
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    • pp.98-102
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    • 2007
  • The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

슬러리 쉴드 터널의 막장 안정성 평가 - 슬러리의 폐색효과를 중심으로 - (Face Stability Assessment of Slurry-shield Tunnels - Concentrating on Slurry Clogging Effect -)

  • 이인모;이샘;조국환
    • 한국지반공학회논문집
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    • 제20권6호
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    • pp.95-107
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    • 2004
  • 슬러리 쉴드 터널에서 슬러리 침투의 유동학적 특성은 막장안정성 측면에서 중요하다. 특히, 슬러리의 침투는 막장 안정성에 큰 영향을 미치며, 본 연구에서 이런 유동학적 특성을 파악하기 위하여 흙-필터의 폐색이론을 적용하였다. 터널시공 도중 슬러리 폐색의 지표로 필터계수를 사용하였으며, 실내실험을 통해 이의 적용성을 규명하였다. 실내실험의 결과를 바탕으로 한 안정해석 결과, 막장안정성은 침투속도와 필터계수의 비율에 영향을 받음을 알 수 있었다. 또한, 슬러리의 침투깊이는 침투속도와 필터계수의 비율과 함께 증가하는 경향을 보였다. 막장안정성은 침투거리가 증가하면 감소하는 경향을 보였으며, 침투거 리를 줄이기 위하여 슬러리에 첨가제를 첨가하였다. 실험에 근거한 분석결과 첨가제가 필요한 한계 유효입경$(D_{10})$은 약 0.75mm임을 알 수 있었다. 슬러리 침투로 인한 막장 안정성은 터널공사시의 굴진속도에도 크게 영향을 받음을 알 수 있었다.

Effect of Anionic Polyelectrolyte on Alumina Dispersions for Ru Chemical Mechanical Polishing

  • Venkatesh, R. Prasanna;Victoria, S. Noyel;Kwon, Tae-Young;Park, Jin-Goo
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.24.2-24.2
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    • 2011
  • Ru is used as a bottom electrode capacitor in dynamic random access memories (DRAMs) and ferroelectric random access memories (FRAMs). The surface of the Ru needs to be planarized which is usually done by chemical mechanical polishing (CMP). Ru CMP process requires chemical slurry consisting of abrasive particles and oxidizer. A slurry containing NaIO4 and alumina particles is already proposed for Ru CMP process. However, the stability of the slurry is critical in the CMP process since if the particles in the slurry get agglomerated it would leave scratches on the surface being planarized. Thus, in the present work, the stability behavior of the slurry using a suitable anionic polyelectrolyte is investigated. The parameters such as slurry pH, polyelectrolyte concentration, adsorption time and the sequence of addition of chemicals are optimized. The results show that the slurry is stable for longer time at an optimized condition. The polishing behavior of the Ru using the optimized slurry is also investigated.

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슬러리의 안정화가 애자의 물리적 특성에 미치는 영향 (Effect of the Physical Property of Insulator on the Slurry Stability)

  • 안용호;최연규;송병기;한병성
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.979-986
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    • 2001
  • This paper was researched the effect of slurry stability on the mechanical and electrical property of the porcelain insulator with various raw materials such as feldspar, quartz, clay and l7wt% alumina. The slurry was fabricated after ball milling the mixed raw materials. Green compacts were made by the extrusion and were sintered at 1300$\^{C}$ for 60min in the tunnel kiln. All of the specimens were densified 96% of the theoretical density. The 3-point flexural strength($\sigma$$\_$B/) of the specimen stabilized slurry pH 7.8 was 1650 k9/㎠ and the vickers hardness(Hv) and the fracture toughness(K$\_$IC/) were 27.5 GPa and 2.2 MPa$.$m$\^$$\sfrac{1}{2}$/, respectively. The mechanical properties of the specimen stabilized slurry PH 9.3 were 1716 kg/㎠($\sigma$$\_$B/), 27.6 GPa(Hv) and 3.0 MPa$.$m$\^$$\sfrac{1}{2}$/(K$\_$IC/), respectively. The dielectric strength was increased from 8.3kV/mm to 13.2kV/mm as the increase of the slurry pH from 7.8 to 9.3. Therefore the physical properties of the specimen stabilized slurry pH 9.3 were improved.

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카본슬러리 연료의 분산안정성 개선 및 scale up 제조 연구 (Research on the Dispersion Stability and Scale up of Carbon Slurry Fuel)

  • 조민호;양문규;이익모;조준현;권태수;정병훈;한정식
    • 한국추진공학회지
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    • 제13권3호
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    • pp.34-40
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    • 2009
  • 카본슬러리 연료 제조 시 카본의 분산안정성에 미치는 공정변수의 영향을 조사하였다. 카본슬러리연료의 분산안정성은 위치별 입도분석, 카본함량 분석, 그리고 원심분리 후 분산상태 관찰을 통해서 측정하였다. 여러 종류의 첨가제를 적용한 결과, NB463S84 사용시 분산성과 분산안정성이 가장 우수한 것을 알 수 있었다. NB463S84와 비슷한 작용기를 가지는 PIBSI를 합성하였으며, 이를 카본슬러리 연료에 적용하여 유사한 분산안정도를 얻었다. 끝으로 g 규모에서 얻은 제조 조건을 kg 규모 제조에 적용하여 카본슬러리 연료의 실용화 가능성을 확인하였다.

Stability of H2O2 as an Oxidizer for Cu CMP

  • Lee, Do-Won;Kim, Tae-Gun;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Transactions on Electrical and Electronic Materials
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    • 제6권1호
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    • pp.29-32
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    • 2005
  • Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

구리CMP공정시 알루미나 슬러리 안정성을 위한 Hydrogen peroxide의 적용 (Application of Hydrogen Peroxide for Alumina Slurry Stability in Cu CMP)

  • 이도원;김남훈;김인표;김상용;김태형;서용진;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.136-139
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    • 2003
  • Copper has attractive properties as a multi-level interconnection material due to lower resistivity and higher electromigration resistance as compared with Alumina and its alloy with Copper(0.5%). Among a variety of agents in Copper CMP slurry, $H_2O_2$ has commonly been used as the oxidizer However. $H_2O_2$ is so unstable that it requires stabilization to use as oxidizer Hence, stabilization of $H_2O_2$ is a vital process to get better yield in practical CMP process. In this article the stability of Hydrogen Peroxide as oxidizer of Copper CMP slurry has been investigated. When alumina abrasive was used, $\gamma$-particle Alumina C had a better stability than $\alpha$-particle abrasive. As adding KOH as pH buffering agent, $H_2O_2$ stability in slurry decreased. Urea hydrogen peroxide was used as oxidizer, an enhanced stability was gotten. When $H_3PO_4$ as $H_2O_2$ stabilizer was added, the decrease of $H_2O_2$ concentration in slurry became slower. Even though adding $H_2O_2$ in slurry after bead milling lead to better stability than in advance of bead milling, it had a lower dispersibility.

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알루미늄 슬러리 연료의 분산안정성 연구 (A Study on the Dispersion Stability of Aluminum Slurry Fuel)

  • 조민호;양문규;정병훈;한정식;이익모
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2009년도 춘계학술대회 논문집
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    • pp.163-166
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    • 2009
  • 알루미늄슬러리 연료 제조 시 알루미늄의 분산안정성에 미치는 공정변수의 영향을 조사하였다. 알루미늄슬러리연료의 분산안정성은 Laser의 산란 현상을 이용하여 물질의 분산 안정성을 파악하는 Turbiscan을 이용하여 확인하였다. 여러 종류의 첨가제 적용시 시간 경과에 따른 입자 크기 및 농도 변화를 측정한 결과, TPAB (Tetrapropyl ammonium bromide) 사용시 다른 첨가제보다 좋은 결과를 나타내었다.

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Optimization of Removal Rates with Guaranteed Dispersion Stability in Copper CMP Slurry

  • Kim Tae-Gun;Kim Nam-Hoon;Kim Sang-Yong;Chang Eui-Goo
    • Transactions on Electrical and Electronic Materials
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    • 제5권6호
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    • pp.233-236
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    • 2004
  • Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.